Light emitting device with led stack for display and display apparatus having the same

ABSTRACT

A light emitting device for a display including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, electrode pads disposed below the first LED sub-unit, and a planarization layer disposed between the first and second LED sub-units and being light transmissive, in which the electrode pads include a common electrode pad electrically connected in common to the first, second, and third LED sub-units, first, second, and third electrode pads connected to the first, second, and third LED sub-units, respectively, the first, second, and third LED sub-units are independently drivable, light generated in the first LED sub-unit is configured to be emitted to the outside through the second and third LED sub-units, and light generated in the second LED sub-unit is configured to be emitted to the outside through the third LED sub-unit.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.17/521,754, filed on Nov. 8, 2021, which is a continuation of U.S.patent application Ser. No. 16/789,877, filed on Feb. 13, 2020, nowissued as U.S. Pat. No. 11,289,461, which is a continuation of U.S.patent application Ser. No. 16/207,881, now issued as U.S. Pat. No.10,748,881, filed on Dec. 3, 2018, and claims priority from and thebenefit of U.S. Provisional Application No. 62/594,754, filed on Dec. 5,2017, U.S. Provisional Application No. 62/608,006, filed on Dec. 20,2017, U.S. Provisional Application No. 62/649,500, filed on Mar. 28,2018, U.S. Provisional Application No. 62/650,920, filed on Mar. 30,2018, U.S. Provisional Application No. 62/651,585, filed on Apr. 2,2018, U.S. Provisional Application No. 62/657,575, filed on Apr. 13,2018, each of which is hereby incorporated by reference for all purposesas if fully set forth herein.

BACKGROUND Field

Exemplary implementations of the invention relate generally to a lightemitting device for a display and a display apparatus and, morespecifically, to a micro light emitting device having a stackedstructure and a display apparatus having the same.

DISCUSSION OF THE BACKGROUND

A light emitting diode (LED) has been widely used as an inorganic lightsource in various fields such as a display apparatus, an automobilelamp, and general lighting. A light emitting diode has a longerlifetime, lower power consumption, and quicker response time than anexisting light source, and thus, LEDs are rapidly replacing the existinglight sources.

To date, conventional LEDs have been mainly used as a backlight lightsource in a display apparatus. However, recently, an LED display thatdirectly generates an image using light emitting diodes have beendeveloped.

A display apparatus generally emits various colors through mixture ofblue, green, and red color light. In order to generate various images,and each pixel has blue, green, and red subpixels. The color of aspecific pixel is determined through the colors of the subpixels, and animage is generated by a combination of such pixels.

Since LEDs may emit light of various colors depending on the materialsused therein, individual LED chips emitting blue, green, and red lightmay be arranged on a two-dimensional plane of a display apparatus.However, when one LED chip forms each subpixel, the number of LED chipsrequired to form a display apparatus can exceed millions, therebycausing excessive time consumption for a mounting process.

In addition, since the subpixels are arranged on a two-dimensionalplane, a relatively large area is occupied by one pixel including thesubpixels for blue, green, and red light. Therefore, there is a need forreducing the area of each subpixel, such that the subpixels may beformed in a limited area. However, such would cause deterioration inbrightness from reduced luminous area, as well as increasingmanufacturing complexity in the process of mounting the LED chip.

Furthermore, reducing the area of each subpixel would also causedeterioration in luminous efficiency of the LED from heat generated inan LED chip.

The above information disclosed in this Background section is only forunderstanding of the background of the inventive concepts, and,therefore, it may contain information that does not constitute priorart.

SUMMARY

Light emitting diodes constructed according to the principles and someexemplary implementations of the invention and displays using the sameare capable of increasing an area of each subpixel without increasingthe pixel area.

Light emitting diodes and display using the light emitting diodes, e.g.,micro LEDs, constructed according to the principles and some exemplaryimplementations of the invention are capable of reducing the amount oftime associated with mounting a light emitting device onto a circuitboard during manufacture.

Light emitting diodes and display using the light emitting diodes, e.g.,micro LEDs, constructed according to the principles and some exemplaryimplementations of the invention include one or more structures forincreasing current distribution.

Light emitting diodes and display using the light emitting diodes, e.g.,micro LEDs, constructed according to the principles and some exemplaryimplementations of the invention include a structure to improve heatdissipation.

Light emitting diodes and display using the light emitting diodes, e.g.,micro LEDs, constructed according to the principles and some exemplaryimplementations of the invention include a mesh structure to improvelight efficiency.

Additional features of the inventive concepts will be set forth in thedescription which follows, and in part will be apparent from thedescription, or may be learned by practice of the inventive concepts.

A light emitting device for a display according to an exemplaryembodiment includes a first LED sub-unit, a second LED sub-unit disposedbelow the first LED sub-unit, a third LED sub-unit disposed below thesecond LED sub-unit, and electrode pads electrically connected to thefirst, second, and third LED sub-units, in which the electrode padsinclude a common electrode pad electrically connected in common to thefirst, second, and third LED sub-units, and first, second, and thirdelectrode pads connected to the first, second, and third LED sub-units,respectively, the first, second, and third LED sub-units are configuredto be independently driven, light generated in the first LED sub-unit isconfigured to be emitted to the outside of the light emitting devicethrough the second LED sub-unit and the third LED sub-unit, and lightgenerated in the second LED sub-unit is configured to be emitted to theoutside of the light emitting device through the third LED sub-unit.

The first, second, and third LED sub-units may include first, second,and third LED stacks configured to emit red light, green light, and bluelight, respectively.

The light emitting device may further include a first reflectiveelectrode disposed between the electrode pads and the first LED sub-unitand in ohmic contact with the first LED sub-unit, in which the commonelectrode pad is connected to the first reflective electrode.

The first reflective electrode may include an ohmic contact layer inohmic contact with an upper surface of the first LED sub-unit, and areflective layer covering at least a portion of the ohmic contact layer.

The first reflective electrode may be in ohmic contact with the uppersurface of the first LED sub-unit in a plurality of regions.

The light emitting device may further include a second transparentelectrode interposed between the second and third LED sub-units and inohmic contact with a lower surface of the second LED sub-unit, and athird transparent electrode in ohmic contact with an upper surface ofthe third LED sub-unit, in which wherein the common electrode pad iselectrically connected to the second transparent electrode and the thirdtransparent electrode.

The light emitting device may further include a first metal currentdistributing layer connected to a lower surface of the secondtransparent electrode, and a third metal current distributing layerconnected to an upper surface of the third transparent electrode, inwhich the common electrode pad is connected to the first metal currentdistributing layer and the third metal current distributing layer.

The first metal current distributing layer and the third metal currentdistributing layer each may have a pad region for connecting the commonelectrode pad and a projection extending from the pad region.

The common electrode pad may be connected to an upper surface of thefirst metal current distributing layer and an upper surface of the thirdmetal current distributing layer.

The light emitting device may further include a first color filterdisposed between the third transparent electrode and the second LEDsub-unit, in which the third metal current distributing layer isdisposed between the first color filter and the second LED sub-unit tobe connected to the third transparent electrode through the first colorfilter.

The light emitting device may further include a second color filterdisposed between the first and second LED sub-units, and a second metalcurrent distributing layer disposed between the second color filter andthe first LED sub-unit to be connected to the second transparentelectrode through the second color filter, in which the second electrodepad is connected to the second metal current distributing layer.

The second metal current distributing layer may have a pad region forconnecting the second electrode pad and a projection extending portionextending from the pad region.

The first and the third LED sub-units may each include a firstconductivity type semiconductor layer and a second conductivity typesemiconductor layer disposed on a partial region of the firstconductivity type semiconductor layer, and the first electrode pad andthe third electrode pad may be electrically connected to the firstconductivity type semiconductor layer of the first LED sub-unit and thefirst conductivity type semiconductor layer of the third LED sub-unit,respectively.

The light emitting device may further include a first ohmic electrodedisposed on the first conductivity type semiconductor layer of the firstLED sub-unit, and a third ohmic electrode disposed on the firstconductivity type semiconductor layer of the third LED sub-unit, inwhich the first electrode pad is connected to the first ohmic electrode,and the third electrode pad is connected to the third ohmic electrode.

The light emitting device may further include a substrate connected to alower surface of the third LED sub-unit.

The substrate may be a sapphire substrate or a gallium nitridesubstrate.

The light emitting device may further include an upper insulation layerdisposed between the first LED sub-unit and the electrode pads, in whichthe electrode pads are electrically connected to the first, second, andthird LED sub-units through the upper insulation layer.

The upper insulation layer may include at least one of a distributedBragg reflector, a reflective organic material, and a light blockingmaterial.

The light emitting device may include a micro LED having a surface arealess than about 10,000 square μm, the first LED sub-unit may beconfigured to emit any one of red, green, and blue light, the second LEDsub-unit may be configured to emit a different one of red, green, andblue light from the first LED sub-unit, and the third LED sub-unit maybe configured to emit a different one of red, green, and blue light fromthe first and second LED sub-units.

A display apparatus may include a circuit board, and a plurality oflight emitting devices arranged on the circuit board, at least one ofthe light emitting devices may include the light emitting deviceaccording to an exemplary embodiment, in which the electrode pads of thelight emitting devices may be electrically connected to the circuitboard, the light emitting devices may further include substrates coupledto the corresponding third LED sub-unit, and the substrates may bespaced apart from each other.

A light emitting device for a display according to an exemplaryembodiment includes a first LED sub-unit, a second LED sub-unit disposedon the first LED sub-unit, a third LED sub-unit disposed on the secondLED sub-unit, electrode pads disposed below the first LED sub-unit, anda filler disposed between the electrode pads, in which the electrodepads include a common electrode pad electrically connected in common tothe first, second, and third LED sub-units, and first, second, and thirdelectrode pads connected to the first, second, and third LED sub-units,respectively, the first, second, and third LED sub-units areindependently drivable, light generated in the first LED sub-unit isconfigured to be emitted to the outside of the light emitting devicethrough the second and third LED sub-units, and light generated in thesecond LED sub-unit is configured to be emitted to the outside throughthe third LED sub-unit.

The first, second, and third LED sub-units may include first, second,and third LED stacks configured to emit red light, green light, and bluelight, respectively.

The light emitting device may further include a first ohmic electrode inohmic contact with a first conductivity type semiconductor layer of thefirst LED sub-unit, and a first reflective electrode disposed betweenthe electrode pads and the first LED sub-unit to be in ohmic contactwith the first LED sub-unit, in which the first electrode pad iselectrically connected to the first ohmic electrode, and the commonelectrode pad is electrically connected to the first reflectiveelectrode below the first reflective electrode.

The first reflective electrode may include an ohmic contact layer inohmic contact with a second conductivity type semiconductor layer of thefirst LED sub-unit, and a reflective layer covering at least a portionof the ohmic contact layer.

The first reflective electrode may be in ohmic contact with an uppersurface of the first LED sub-unit in a plurality of regions.

The light emitting device may further include a second transparentelectrode interposed between the first and second LED sub-units to be inohmic contact with a lower surface of the second LED sub-unit, a thirdtransparent electrode interposed between the second and third LEDsub-units to be in ohmic contact with a lower surface of the third LEDsub-unit, and a common connector electrically connecting the secondtransparent electrode and the third transparent electrode to the firstreflective electrode, in which the common connector is disposed on thefirst reflective electrode and is electrically connected to the commonelectrode pad through the first reflective electrode.

The light emitting device may further include a second metal currentspreading layer connected to a lower surface of the second transparentelectrode; and a third metal current spreading layer connected to alower surface of the third transparent electrode, in which the commonconnector is connected to at least one of the second transparentelectrode and the second metal current spreading layer, and at least oneof the third transparent electrode and the third metal current spreadinglayer.

The second metal current spreading layer and the third metal currentspreading layer may each have a pad region for connecting the commonconnector and a projection extending from the pad region.

The common connector may be connected to an upper surface of the secondmetal current spreading layer and an upper surface of the third metalcurrent spreading layer.

The common connector may include a first common connector forelectrically connecting the second transparent electrode and the firstreflective electrode to each other, and a second common connector forelectrically connecting the third transparent electrode and the firstcommon connector to each other.

The light emitting device may further include a first color filterdisposed between the first LED sub-unit and the second transparentelectrode, and a second color filter disposed between the second LEDsub-unit and the third transparent electrode, in which the second metalcurrent spreading layer is disposed between the first color filter andthe first LED sub-unit to be connected to the second transparentelectrode through the first color filter, and the third metal currentspreading layer is disposed between the second color filter and thesecond LED sub-unit to be connected to the third transparent electrodethrough the second color filter.

The light emitting device may further include a second connector forelectrically connecting the second LED sub-unit and the second electrodepad to each other, and a third connector for electrically connecting thethird LED sub-unit and the third electrode pad to each other, in whicheach of the second and third LED sub-units may include a firstconductivity type semiconductor layer and a second conductivity typesemiconductor layer disposed below the first conductivity typesemiconductor layer, the second connector is electrically connected tothe first conductivity type semiconductor layer of the second LEDsub-unit, and the third connector is electrically connected to the firstconductivity type semiconductor layer of the third LED sub-unit.

At least one of the second connector and the third connector may contactthe first conductivity type semiconductor layer.

The light emitting device may further include a second ohmic electrodein ohmic contact with the first conductivity type semiconductor layer ofthe second LED sub-unit, and a third ohmic electrode in ohmic contactwith the first conductivity type semiconductor layer of the third LEDsub-unit, in which the second connector is connected to the second ohmicelectrode, and the third connector is connected to the third ohmicelectrode.

The second and third connectors may be connected to upper surfaces ofthe second ohmic electrode and the third ohmic electrode, respectively.

The third connector may include a lower connector penetrating throughthe second LED sub-unit, and an upper connector penetrating through thethird LED sub-unit and connected to an intermediate connector, in whichthe lower connector has a pad region for connection of the upperconnector.

The light emitting device may further include an insulating layercovering side surfaces of the first, second, and third LED sub-units, inwhich the insulating layer may include a distributed Bragg reflector.

The light emitting device may further include connection pads disposedbelow the first LED sub-unit, and connectors disposed on the connectionpads and electrically connecting the second and third LED sub-units tothe connection pads, respectively, in which the second electrode pad andthe third electrode pad are connected to the connection pads,respectively, below the connection pads.

The light emitting device may further include connectors forelectrically connecting the second and third LED sub-units to theelectrode pads, in which the connectors may include materials differentfrom the electrode pads.

A display apparatus may include a circuit board, and a plurality oflight emitting devices arranged on the circuit board, at least one ofthe light emitting devices may include the light emitting deviceaccording to an exemplary embodiments, in which the electrode pads ofthe light emitting device are electrically connected to the circuitboard.

A light emitting device for a display according to an exemplaryembodiment includes a first substrate, a first LED sub-unit disposedunder the first substrate, a second LED sub-unit disposed under thefirst LED sub-unit, a third LED sub-unit disposed under the second LEDsub-unit, a first transparent electrode interposed between the first andsecond LED sub-units, and in ohmic contact with a lower surface of thefirst LED sub-unit, a second transparent electrode interposed betweenthe second and third LED sub-units, and in ohmic contact with a lowersurface of the second LED sub-unit, a third transparent electrodeinterposed between the second transparent electrode and the third LEDsub-unit, and in ohmic contact with an upper surface of the third LEDsub-unit, at least one current spreader connected to at least one of thefirst, second, and third LED sub-units, electrode pads disposed on thefirst substrate, and through-hole vias formed through the firstsubstrate to electrically connect the electrode pads to the first,second, and third LED sub-units, in which at least one of thethrough-hole vias is formed through the first substrate, the first LEDsub-unit, and the second LED sub-unit.

The first, second, and third LED sub-units may include first, second,and third LED stacks configured to emit red light, green light and bluelight, respectively.

The light emitting device may further include a distributed Braggreflector interposed between the first substrate and the first LEDsub-unit.

The first substrate may include GaAs.

The light emitting device may further include a second substratedisposed under the third LED sub-unit.

The second substrate may be a sapphire substrate or a GaN substrate.

The first LED sub-unit, the second LED sub-unit, and the third LEDsub-unit may be independently drivable, light generated from the firstLED sub-unit may be configured to be emitted to the outside of the lightemitting device through the second LED sub-unit, the third LED sub-unit,and the second substrate, and light generated from the second LEDsub-unit may be configured to be emitted to the outside of the lightemitting device through the third LED sub-unit and the second substrate.

The electrode pads may include a common electrode pad commonlyelectrically connected to the first, second, and third LED sub-units,and a first electrode pad, a second electrode pad, and a third electrodepad electrically connected to the first LED sub-unit, the second LEDsub-unit, and the third LED sub-unit, respectively.

The common electrode pad may be electrically connected to a plurality ofthrough-hole vias.

The second electrode pad may be electrically connected to the second LEDsub-unit through a first through-hole via formed through the firstsubstrate and the first LED sub-unit, and the third electrode pad may beelectrically connected to the third LED sub-unit through a secondthrough-hole via formed through the first substrate, the first LEDsub-unit, and the second LED sub-unit.

The first electrode pad may be electrically connected to the firstsubstrate.

The first electrode pad may be electrically connected to the first LEDsub-unit through a third through-hole via formed through the firstsubstrate.

The at least one current spreader may include a first current spreaderconnected to the first LED sub-unit, a second current spreader connectedto the second LED sub-unit, and a third current spreader connected tothe third LED sub-unit, and the first, second, and third currentspreaders may be separated from the first, second, and third transparentelectrodes, respectively.

One of the electrode pads disposed on the first substrate may beelectrically connected to the first, second, and third transparentelectrodes through a plurality of through-hole vias.

One of the electrode pads disposed on the first substrate may beconnected to the first substrate.

The light emitting device may further include a first color filterdisposed between the third transparent electrode and the secondtransparent electrode, and a second color filter disposed between thesecond LED sub-unit and the first transparent electrode.

The first color filter and the second color filter may includeinsulation layers having different refractive indices.

The light emitting device may include an insulation layer disposedbetween the first substrate and the electrode pads, and covering sidesurfaces of the first, second, and third LED sub-units.

The at least one current spreader may have a body at least partiallysurrounding one of the through-hole via, and a projection extendingoutwardly from the body.

The body may have a substantially annular shape and the projection mayhave a width less than the diameter of the body.

A display apparatus according to an exemplary embodiment includes acircuit board, and a plurality of light emitting devices arranged on thecircuit board, at least one of the light emitting devices includeincludes a first substrate, a first LED sub-unit disposed under thefirst substrate, a second LED sub-unit disposed under the first LEDsub-unit, a third LED sub-unit disposed under the second LED sub-unit, afirst transparent electrode interposed between the first and second LEDsub-units, and in ohmic contact with a lower surface of the first LEDsub-unit, a second transparent electrode interposed between the secondand third LED sub-units, and in ohmic contact with a lower surface ofthe second LED sub-unit, a third transparent electrode interposedbetween the second transparent electrode and the third LED sub-unit, andin ohmic contact with an upper surface of the third LED sub-unit, atleast one current spreader connected to at least one of the first,second, and third LED sub-units, electrode pads disposed on the firstsubstrate, and through-hole vias formed through the first substrate toelectrically connect the electrode pads to the first, second, and thirdLED sub-units, in which at least one of the through-hole vias is formedthrough the first substrate, the first LED sub-unit, and the second LEDsub-unit, and the electrode pads of the light emitting device areelectrically connected to the circuit board.

Each of the light emitting devices may further include a secondsubstrate coupled to the third LED sub-unit.

A light emitting device for a display according to an exemplaryembodiment includes a first substrate, a first LED sub-unit disposedunder the first substrate, a second LED sub-unit disposed under thefirst LED sub-unit, a third LED sub-unit disposed under the second LEDsub-unit, electrode pads disposed over the first substrate, through-holevias passing through the first substrate to electrically connect theelectrode pads to the first, second, and third LED sub-units, and heatexchange elements disposed over the first LED sub-unit, each exchangeelement having at least a portion thereof disposed inside the firstsubstrate, in which at least one of the through-hole vias passes throughthe first substrate, the first LED sub-unit, and the second LEDsub-unit.

The first, second, and third LED sub-units may include first, second,and third LED stacks configured to emit red light, green light and bluelight, respectively, and the heat exchange elements may include heatpipes.

The light emitting device may include a distributed Bragg reflectorinterposed between the first substrate and the first LED sub-unit, inwhich the heat exchange elements may be disposed on the distributedBragg reflector.

The first substrate may be a GaAs substrate.

The light emitting device may further include a second substratedisposed under the third LED sub-unit.

The second substrate may be a sapphire substrate or a GaN substrate.

The first LED sub-unit, the second LED sub-unit, and the third LEDsub-unit may be independently drivable, light generated from the firstLED sub-unit may be configured to be emitted to the outside of the lightemitting device through the second LED sub-unit, the third LED sub-unit,and the second substrate, and light generated from the second LEDsub-unit may be configured to be emitted to the outside of the lightemitting device through the third LED sub-unit and the second substrate.

The electrode pads may include a common electrode pad commonlyelectrically connected to the first, second, and third LED sub-unit, anda first electrode pad, a second electrode pad, and a third electrode padelectrically connected to the first LED sub-unit, the second LEDsub-unit, and the third LED sub-unit, respectively.

The common electrode pad may be electrically connected to a plurality ofthrough-hole vias.

The second electrode pad may be electrically connected to the second LEDsub-unit through a through-hole via formed through the first substrateand the first LED sub-unit, and the third electrode pad may beelectrically connected to the third LED sub-unit through a through-holevia formed through the first substrate, the first LED sub-unit, and thesecond LED sub-unit.

The first electrode pad may be electrically connected to the firstsubstrate, and the heat exchange elements may be electrically insulatedfrom the common electrode pad, the second electrode pad, and the thirdelectrode pad.

The first electrode pad may be electrically connected to the first LEDsub-unit through a through-hole via passing through the first substrate,and the heat exchange elements may be electrically connected to thecommon electrode pad, and are electrically insulated from the firstelectrode pad.

The through-hole vias may be insulated from the substrate by aninsulation layer inside the substrate, and the heat exchange elementsmay contact the substrate inside the substrate.

The through-hole vias and the heat exchange elements may be insulatedfrom the substrate by the insulation layer inside the substrate.

The light emitting device may further include a first transparentelectrode interposed between the first LED sub-unit and the second LEDsub-unit, and being in ohmic contact with a lower surface of the firstLED sub-unit, a second transparent electrode interposed between thesecond LED sub-unit and the third LED sub-unit, and being in ohmiccontact with a lower surface of the second LED, a third transparentelectrode interposed between the second transparent electrode and thethird LED sub-unit, and being in ohmic contact with an upper surface ofthe third LED sub-unit, and at least one current spreader connected toat least one of the first, second, and third LED sub-units.

The at least one current spreader may include a first current spreaderconnected to the first LED sub-unit, a second current spreader connectedto the second LED sub-unit, and a third current spreader connected tothe third LED sub-unit, and the first, second, and third currentspreaders may be separated from the first, second, and third transparentelectrodes, respectively.

One of the electrode pads disposed on the first substrate may beelectrically connected to the first, second, and third transparentelectrodes through the through-hole vias.

The light emitting device may further include a first color filterdisposed between the third transparent electrode and the secondtransparent electrode, and a second color filter disposed between thesecond LED sub-unit and the first transparent electrode.

The light emitting device may further include an insulation layerinterposed between the first substrate and the electrode pads, andcovering side surfaces of the first to third LED sub-units.

A light emitting device for a display according to an exemplaryembodiment includes a first substrate, a first LED sub-unit disposedunder the first substrate, a second LED sub-unit disposed under thefirst LED sub-unit, a third LED sub-unit disposed under the second LEDsub-unit, and heat exchange elements each having at least a portionthereof disposed inside the first substrate, in which the heat exchangeelements are disposed over the first LED sub-unit.

The light emitting device may further include electrode pads disposed onthe first substrate, and through-hole vias to electrically connect theelectrode pads to the first, second, and third LED sub-unit, in whichthe heat exchange elements include heat pipes.

The light emitting device may further include a second substratedisposed under the third LED sub-unit, in which the first substrate maybe a GaAs substrate, and the second substrate may be a sapphiresubstrate or a GaN substrate.

The light emitting device may further include a first transparentelectrode interposed between the first LED sub-unit and the second LEDsub-unit, and being in ohmic contact with a lower surface of the firstLED sub-unit, a second transparent electrode interposed between thesecond LED sub-unit and the third LED sub-unit, and being in ohmiccontact with a lower surface of the second LED sub-unit, a thirdtransparent electrode interposed between the second transparentelectrode and the third LED sub-unit, and being in ohmic contact with anupper surface of the third LED sub-unit, and at least one currentspreader connected to at least one of the first, second, and third LEDsub-units.

The light emitting device may include a micro LED having a surface arealess than about 10,000 square μm, the first LED sub-unit may beconfigured to emit any one of red, green, and blue light, the second LEDsub-unit may be configured to emit a different one of red, green, andblue light from the first LED sub-unit, and the third LED sub-unit maybe configured to emit a different one of red, green, and blue light fromthe first and second LED sub-units.

A display apparatus may include a circuit board, and a plurality oflight emitting devices arranged on the circuit board, at least one ofthe light emitting devices may include the light emitting deviceaccording to an exemplary embodiment.

The electrode pads may be electrically connected to the circuit board.

Each of the light emitting devices may further include a secondsubstrate coupled to the third LED sub-unit.

A light emitting device for a display according to an exemplaryembodiment includes a first substrate, a first LED sub-unit disposedunder the first substrate, a second LED sub-unit disposed under thefirst LED sub-unit, a third LED sub-unit disposed under the second LEDsub-unit, a first ohmic electrode interposed between the first LEDsub-unit and the second LED sub-unit, and being in ohmic contact with alower surface of the first LED sub-unit, a second ohmic electrodeinterposed between the second LED sub-unit and the third LED sub-unit,and being in ohmic contact with a lower surface of the second LEDsub-unit, a third ohmic electrode interposed between the second ohmicelectrode and the third LED sub-unit, and being in ohmic contact with anupper surface of the third LED sub-unit, electrode pads disposed on thefirst substrate, and through-hole vias formed through the firstsubstrate to electrically connect the electrode pads to the first,second, and third LED sub-unit, in which at least one of thethrough-hole vias is formed through the first substrate, the first LEDsub-unit, and the second LED sub-unit, and at least one of the firstohmic electrode, the second ohmic electrode, and the third electrode hasa mesh structure.

The first, second, and third LED sub-units may include first, second,and third LED stacks configured to emit red light, green light, and bluelight, respectively.

The light emitting device may further include a distributed Braggreflector interposed between the first substrate and the first LEDsub-unit.

The first substrate may be a GaAs substrate.

The light emitting device may further include a second substratedisposed under the third LED sub-unit.

The second substrate may be a sapphire substrate or a GaN substrate.

The first LED sub-unit, the second LED sub-unit, and the third LEDsub-unit may be independently drivable, light generated from the firstLED sub-unit may be configured to be emitted to the outside of the lightemitting device through the second LED sub-unit, the third LED sub-unit,and the second substrate, and light generated from the second LEDsub-unit may be configured to be emitted to the outside of the lightemitting device through the third LED sub-unit and the second substrate.

The electrode pads may include a common electrode pad commonlyelectrically connected to the first, second, and third LED sub-unit, anda first electrode pad, a second electrode pad, and a third electrode padelectrically connected to the first LED sub-unit, the second LEDsub-unit, and the third LED sub-unit, respectively.

The common electrode pad may be electrically connected to a plurality ofthrough-hole vias.

The second electrode pad may be electrically connected to the second LEDsub-unit through a through-hole via formed through the first substrateand the first LED sub-unit, and the third electrode pad may beelectrically connected to the third LED sub-unit through a through-holevia formed through the first substrate, the first LED sub-unit, and thesecond LED sub-unit.

The first electrode pad may be electrically connected to the firstsubstrate.

The first electrode pad may be electrically connected to the first LEDsub-unit through a through-hole via formed through the first substrate.

The first ohmic electrode may have the mesh structure and include Au—Znor Au—Be, and the second ohmic electrode may have the mesh structure andinclude Pt or Rh.

One of the electrode pads disposed on the first substrate may beelectrically connected to the first, second, and third ohmic electrodesthrough a plurality of through-hole vias.

One of the electrode pads disposed on the first substrate may beconnected to the first substrate.

The light emitting device may further include a first color filterdisposed between the third ohmic electrode and the second ohmicelectrode, and a second color filter disposed between the second LEDsub-unit and the first ohmic electrode.

The first color filter and the second color filter may includeinsulation layers having different refractive indices.

The light emitting device may further include an insulation layerdisposed between the first substrate and the electrode pads, andcovering side surfaces of the first, second, and third LED sub-units.

A display apparatus may include a circuit board, and a plurality oflight emitting devices arranged on the circuit board, at least one ofthe light emitting devices may include the light emitting deviceaccording to an exemplary embodiment, in which the electrode pads may beelectrically connected to the circuit board.

Each of the light emitting devices may further include a secondsubstrate coupled to the third LED sub-unit.

A light emitting device for a display according to an exemplaryembodiment includes a first substrate, a first LED sub-unit disposedunder the first substrate, a second LED sub-unit disposed under thefirst LED sub-unit, a third LED sub-unit disposed under the second LEDsub-unit, a first ohmic electrode interposed between the first LEDsub-unit and the second LED sub-unit, and being in ohmic contact with alower surface of the first LED sub-unit, a second ohmic electrodeinterposed between the second LED sub-unit and the third LED sub-unit,and being in ohmic contact with a lower surface of the second LEDsub-unit, a third ohmic electrode interposed between the second ohmicelectrode and the third LED sub-unit, and being in ohmic contact with anupper surface of the third LED sub-unit, a second substrate disposedunder the third LED sub-unit, in which at least one of the first ohmicelectrode, the second ohmic electrode, and the third electrode has amesh structure.

The first substrate may be a GaAs substrate, and the second substratemay be a sapphire substrate or a GaN substrate.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate exemplary embodiments of theinvention, and together with the description serve to explain theinventive concepts.

FIG. 1 is a schematic plan view of a display apparatus according to anexemplary embodiment.

FIG. 2A is a schematic plan view of a light emitting device according toan exemplary embodiment.

FIG. 2B is a schematic cross-sectional view taken along line A-A of FIG.2A.

FIGS. 3A, 3B, 4A, 4B, 5A, 5B, 6A, 6B, 7A, 7B, 8A, 8B, 9A, 9B, 10A, 10B,11A, 11B, 12A, 12B, 13A, and 13B are schematic plan views andcross-sectional views illustrating a method of manufacturing a lightemitting device according to an exemplary embodiment.

FIG. 14 is a schematic plan view of a display apparatus according to anexemplary embodiment.

FIG. 15A is a schematic plan view of a light emitting device accordingto an exemplary embodiment.

FIG. 15B is a schematic cross-sectional view taken along line A-B ofFIG. 15A.

FIGS. 16A, 16B, 17A, 17B, 18A, 18B, 19A, 19B, 20A, 20B, 21A, 21B, 22A,22B, 23A, 23B, 24A, 24B, 25A, 25B, 26A, and 26B are schematic plan viewsand cross-sectional views illustrating a method of manufacturing a lightemitting device according to an exemplary embodiment.

FIG. 27A is a schematic plan view of a light emitting device for adisplay according to another exemplary embodiment.

FIG. 27B is a schematic cross-sectional view taken along line A-B ofFIG. 27A.

FIGS. 28A, 28B, 29A, 29B, 30A, 30B, 31A, 31B, 32A, 32B, 33A, 33B, 34A,and 34B are schematic plan views and cross-sectional views illustratinga method of manufacturing a light emitting device according to anotherexemplary embodiment.

FIG. 35A is a plan view of a light emitting diode stack structureaccording to another exemplary embodiment.

FIG. 35B is a schematic cross-sectional view taken along line A-B ofFIG. 35A.

FIG. 36A is a schematic plan view of a light emitting device accordingto still another exemplary embodiment.

FIGS. 36B and 36C are schematic cross-sectional views taken along linesG-H and I-J of FIG. 36A, respectively.

FIG. 37 is a schematic plan view of a display apparatus according to anexemplary embodiment.

FIG. 38A is a schematic plan view of a light emitting device for adisplay according to an exemplary embodiment.

FIG. 38B is a schematic cross-sectional view taken along line A-A ofFIG. 38A.

FIGS. 39A, 39B, 40A, 40B, 41A, 41B, 42, 43, 44, 45A, 45B, 46A, 46B, 47A,47B, 48A, 48B, 49A, and 49B are schematic plan views and cross-sectionalviews illustrating a method of manufacturing a light emitting device fora display according to an exemplary embodiment.

FIG. 50A and FIG. 50B are a schematic plan view and a cross-sectionalview of a light emitting device for a display according to anotherexemplary embodiment, respectively.

FIG. 51 is a schematic plan view of a display apparatus according to anexemplary embodiment.

FIG. 52A is a schematic plan view of a light emitting device for adisplay according to an exemplary embodiment.

FIG. 52B is a schematic cross-sectional view taken along the line A-A ofFIG. 52A.

FIGS. 53A, 53B, 54A, 54B, 55A, 55B, 56, 57, 58, 59A, 59B, 60A, 60B, 61A,61B, 62A, 62B, 63A, 63B, 64A, 64B, 65A, and 65B are schematic plan viewsand cross-sectional views illustrating a method of manufacturing a lightemitting device for a display according to an exemplary embodiment.

FIGS. 66A and 66B are a schematic plan view and a cross-sectional viewsillustrating a light emitting device for a display according to anotherexemplary embodiment.

FIGS. 67A and 67B are a schematic plan view and a cross-sectional viewillustrating a light emitting device for a display according to anotherexemplary embodiment.

FIGS. 68A and 68B are a schematic plan view and a cross-sectional viewillustrating a light emitting device for a display according to anotherexemplary embodiment.

FIG. 69 is a schematic plan view of a display apparatus according to anexemplary embodiment.

FIG. 70A is a schematic plan view of a light emitting device for adisplay according to an exemplary embodiment.

FIG. 70B is a schematic cross-sectional view taken along the line A-A ofFIG. 70A.

FIGS. 71A, 71B, 72A, 72B, 73A, 73B, 74, 75, 76, 77A, 77B, 78A, 78B, 79A,79B, 80A, 80B, 81A, and 81B are schematic plan views and cross-sectionalviews illustrating a method of manufacturing a light emitting device fora display according to an exemplary embodiment.

FIG. 82A and FIG. 82B are a schematic plan view and a cross-sectionalview of a light emitting device for a display according to anotherexemplary embodiment, respectively.

DETAILED DESCRIPTION

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments or implementations of theinvention. As used herein “embodiments” and “implementations” areinterchangeable words that are non-limiting examples of devices ormethods employing one or more of the inventive concepts disclosedherein. It is apparent, however, that various exemplary embodiments maybe practiced without these specific details or with one or moreequivalent arrangements. In other instances, well-known structures anddevices are shown in block diagram form in order to avoid unnecessarilyobscuring various exemplary embodiments. Further, various exemplaryembodiments may be different, but do not have to be exclusive. Forexample, specific shapes, configurations, and characteristics of anexemplary embodiment may be used or implemented in another exemplaryembodiment without departing from the inventive concepts.

Unless otherwise specified, the illustrated exemplary embodiments are tobe understood as providing exemplary features of varying detail of someways in which the inventive concepts may be implemented in practice.Therefore, unless otherwise specified, the features, components,modules, layers, films, panels, regions, and/or aspects, etc.(hereinafter individually or collectively referred to as “elements”), ofthe various embodiments may be otherwise combined, separated,interchanged, and/or rearranged without departing from the inventiveconcepts.

The use of cross-hatching and/or shading in the accompanying drawings isgenerally provided to clarify boundaries between adjacent elements. Assuch, neither the presence nor the absence of cross-hatching or shadingconveys or indicates any preference or requirement for particularmaterials, material properties, dimensions, proportions, commonalitiesbetween illustrated elements, and/or any other characteristic,attribute, property, etc., of the elements, unless specified. Further,in the accompanying drawings, the size and relative sizes of elementsmay be exaggerated for clarity and/or descriptive purposes. When anexemplary embodiment may be implemented differently, a specific processorder may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order. Also, like reference numerals denote like elements.

When an element, such as a layer, is referred to as being “on,”“connected to,” or “coupled to” another element or layer, it may bedirectly on, connected to, or coupled to the other element or layer orintervening elements or layers may be present. When, however, an elementor layer is referred to as being “directly on,” “directly connected to,”or “directly coupled to” another element or layer, there are nointervening elements or layers present. To this end, the term“connected” may refer to physical, electrical, and/or fluid connection,with or without intervening elements. Further, the D1-axis, the D2-axis,and the D3-axis are not limited to three axes of a rectangularcoordinate system, such as the x, y, and z-axes, and may be interpretedin a broader sense. For example, the D1-axis, the D2-axis, and theD3-axis may be perpendicular to one another, or may represent differentdirections that are not perpendicular to one another. For the purposesof this disclosure, “at least one of X, Y, and Z” and “at least oneselected from the group consisting of X, Y, and Z” may be construed as Xonly, Y only, Z only, or any combination of two or more of X, Y, and Z,such as, for instance, XYZ, XYY, YZ, and ZZ. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items.

Although the terms “first,” “second,” etc. may be used herein todescribe various types of elements, these elements should not be limitedby these terms. These terms are used to distinguish one element fromanother element. Thus, a first element discussed below could be termed asecond element without departing from the teachings of the disclosure.

Spatially relative terms, such as “beneath,” “below,” “under,” “lower,”“above,” “upper,” “over,” “higher,” “side” (e.g., as in “sidewall”), andthe like, may be used herein for descriptive purposes, and, thereby, todescribe one elements relationship to another element(s) as illustratedin the drawings. Spatially relative terms are intended to encompassdifferent orientations of an apparatus in use, operation, and/ormanufacture in addition to the orientation depicted in the drawings. Forexample, if the apparatus in the drawings is turned over, elementsdescribed as “below” or “beneath” other elements or features would thenbe oriented “above” the other elements or features. Thus, the exemplaryterm “below” can encompass both an orientation of above and below.Furthermore, the apparatus may be otherwise oriented (e.g., rotated 90degrees or at other orientations), and, as such, the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof. It is also noted that, as used herein, the terms“substantially,” “about,” and other similar terms, are used as terms ofapproximation and not as terms of degree, and, as such, are utilized toaccount for inherent deviations in measured, calculated, and/or providedvalues that would be recognized by one of ordinary skill in the art.

Various exemplary embodiments are described herein with reference tosectional and/or exploded illustrations that are schematic illustrationsof idealized exemplary embodiments and/or intermediate structures. Assuch, variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should notnecessarily be construed as limited to the particular illustrated shapesof regions, but are to include deviations in shapes that result from,for instance, manufacturing. In this manner, regions illustrated in thedrawings may be schematic in nature and the shapes of these regions maynot reflect actual shapes of regions of a device and, as such, are notnecessarily intended to be limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and should not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

Hereinafter, exemplary embodiments will be described in detail withreference to the drawings. As used herein, a light emitting device or alight emitting diode according to exemplary embodiments may include amicro LED, which has a surface area less than about 10,000 square μm asknown in the art. In other exemplary embodiments, the micro LED's mayhave a surface area of less than about 4,000 square μm, or less thanabout 2,500 square μm, depending upon the particular application. Inaddition, a light emitting device may be mounted in variousconfigurations, such as flip bonding, and thus, the inventive conceptsare not limited to a particular stacked sequence of the first, second,and third LED stacks.

FIG. 1 is a schematic plan view illustrating a display apparatusaccording to an exemplary embodiment.

Referring to FIG. 1 , the display apparatus includes a circuit board 101and a plurality of light emitting devices 100.

The circuit board 101 may include a circuit for passive matrix drivingor active matrix driving. In one exemplary embodiment, the circuit board101 may include wires and resistors disposed therein. In anotherexemplary embodiment, the circuit board 101 may include wires,transistors, and capacitors. The circuit board 101 may also have padsdisposed on an upper surface thereof in order to allow electricalconnection to circuits disposed therein.

The plurality of light emitting devices 100 are arranged on the circuitboard 101. Each light emitting device 100 may constitute one pixel. Thelight emitting device 100 has electrode pads 81 a, 81 b, 81 c, and 81 delectrically connected to the circuit board 101. The light emittingdevice 100 may also include a substrate 41 disposed on an upper surfacethereof. The light emitting devices 100 are spaced apart from eachother, such that the substrates 41 disposed on the upper surfaces of thelight emitting devices 100 are also spaced apart from each other.

A configuration of the light emitting device 100 according to anexemplary embodiment will be described in detail with reference to FIGS.2A and 2B. FIG. 2A is a schematic plan view of a light emitting device100 according to an exemplary embodiment, and FIG. 2B is across-sectional view taken along line A-A of FIG. 2A. Although theelectrode pads 81 a, 81 b, 81 c, and 81 d are shown as being arranged onan upper side of the light emitting device 100, however, the inventiveconcepts are not limited thereto. For example, the light emitting device100 may be flip-bonded onto the circuit board 101, and in this case, theelectrode pads 81 a, 81 b, 81 c, and 81 d may arranged on a lower sideof the light emitting device 100.

Referring to FIGS. 2A and 2B, the light emitting device 100 includes thesubstrate 41, the electrode pads 81 a, 81 b, 81 c, and 81 d, a first LEDstack 23, a second LED stack 33, a third LED stack 43, an insulationlayer 25, a protective layer 29, a first reflective electrode 26, asecond transparent electrode 35, a third transparent electrode 45, firstand third ohmic electrodes 28 and 48, a 2-1-th current distributinglayer 36, a 2-2-th current distributing layer 38, a third currentdistributing layer 46, a first color filter 47, a second color filter67, a first bonding layer 49, a planarization layer 39, a second bondinglayer 69, and an upper insulation layer 71.

The substrate 41 may support the LED stacks 23, 33, and 43. Thesubstrate 41 may be a growth substrate on which the third LED stack 43is grown. For example, the substrate 41 may be a sapphire substrate or agallium nitride substrate, in particular, a patterned sapphiresubstrate. The first, second, and third LED stacks 23, 33, and 43 arearranged on the substrate 41 in the order of the third LED stack 43, thesecond LED stack 33, and the first LED stack 23. A single third LEDstack may be disposed on one substrate 41, and thus, the light emittingdevice 100 may have a single-chip structure of a single pixel. In someexemplary embodiments, the substrate 41 may be omitted, and a lowersurface of the third LED stack 43 may be exposed. In this case, a roughsurface may be formed on the lower surface of the third LED stack 43 bysurface texturing.

The first LED stack 23, the second LED stack 33, and the third LED stack43 include first conductivity type semiconductor layers 23 a, 33 a, and43 a, second conductivity type semiconductor layers 23 b, 33 b, and 43b, and active layers interposed between the first conductivity typesemiconductor layers 23 a, 33 a, and 43 a and the second conductivitytype semiconductor layers 23 b, 33 b, and 43 b, respectively. The activelayer may have a multiple quantum well structure.

According to an exemplary embodiment, an LED stack may emit light havinga shorter wavelength as being disposed closer to the substrate 41. Forexample, the first LED stack 23 may be an inorganic light emitting diodeemitting red light, the second LED stack 33 may be an inorganic lightemitting diode emitting green light, and the third LED stack 43 may bean inorganic light emitting diode emitting blue light. The first LEDstack 23 may include a GaInP based well layer, and the second LED stack33 and the third LED stack 43 may include a GaInN based well layer.However, the inventive concepts are not limited thereto. When the lightemitting device 100 includes a micro LED, which has a surface area lessthan about 10,000 square μm as known in the art, or less than about4,000 square μm or 2,500 square μm in other exemplary embodiments, thefirst LED stack 23 may emit any one of red, green, and blue light, andthe second and third LED stacks 33 and 43 may emit a different one ofred, green, and blue light, without adversely affecting operation, dueto the small form factor of a micro LED.

The first conductivity type semiconductor layers 23 a, 33 a, and 43 a ofthe respective LED stacks 23, 33, and 43 may be n-type semiconductorlayers, and the second conductivity type semiconductor layers 23 b, 33b, and 43 b of the respective LED stacks 23, 33, and 43 may be p-typesemiconductor layers. In the illustrated exemplary embodiment, an uppersurface of the first LED stack 23 may be a p-type semiconductor layer 23b, an upper surface of the second LED stack 33 may be an n-typesemiconductor layer 33 a, and an upper surface of the third LED stack 43may be a p-type semiconductor layer 43 b. More particularly, an order ofthe semiconductor layers may be reversed only in the second LED stack33. According to an exemplary embodiment, the first LED stack 23 and thethird LED stack 43 may have the first conductivity type semiconductorlayers 23 a and 43 a with textured surfaces, respectively, to improvelight extraction efficiency. In some exemplary embodiments, the secondLED stack 33 may also have the first conductivity type semiconductorlayer 33 a with a textured surface, however, since the firstconductivity type semiconductor layer 33 a is disposed farther from thesubstrate 41 than the second conductivity type semiconductor layer 33 b,effects from the surface texturing may not be significant. Inparticular, when the second LED stack 33 emits green light, the greenlight has higher visibility than red light or blue light. Therefore, thefirst LED stack 23 and the third LED stack 43 may be formed to havehigher luminous efficiency than the second LED stack 33. In this manner,luminous intensities of red light, green light, and blue light may beadjusted to be substantially uniform with each other by applying surfacetexturing to the greater extent in the first LED stack 23 and the thirdLED stack 43 than the second LED stack 33.

Furthermore, in the first LED stack 23 and the third LED stack 43, thesecond conductivity type semiconductor layers 23 b and 43 b may bedisposed on partial regions of the first conductivity type semiconductorlayer 23 a and 43 a, and thus, the first conductivity type semiconductorlayers 23 a and 43 a are partially exposed. Alternatively, in the caseof the second LED stack 33, the first conductivity type semiconductorlayer 33 a and the second conductivity type semiconductor layer 33 b maybe completely overlapped with each other.

The first LED stack 23 is disposed apart from the substrate 41, thesecond LED stack 33 is disposed below the first LED stack 23, and thethird LED stack 43 is disposed below the second LED stack 33. Accordingto an exemplary embodiment, since the first LED stack 23 emits lighthaving a longer wavelength than that of the second and third LED stacks33 and 43, light generated in the first LED stack 23 may be emitted tothe outside through the second and third LED stacks 33 and 43 and thesubstrate 41. In addition, since the second LED stack 33 emits lighthaving a longer wavelength than that of the third LED stack 43, thelight generated in the second LED stack 33 may be emitted to the outsidethrough the third LED stack 43 and the substrate 41.

The insulation layer 25 is disposed on the first LED stack 23, and hasat least one opening exposing the second conductivity type semiconductorlayer 23 b of the first LED stack 23. The insulation layer 25 may have aplurality of openings distributed over on the first LED stack 23. Theinsulation layer 25 may be a transparent insulation layer having arefractive index lower than that of the first LED stack 23.

The first reflective electrode 26 is in ohmic contact with the secondconductivity type semiconductor layer 23 b of the first LED stack 23,and reflects light generated in the first LED stack 23 toward thesubstrate 41. The first reflective electrode 26 is disposed on theinsulation layer 25, and is connected to the first LED stack 23 throughthe opening of the insulation layer 25.

The first reflective electrode 26 may include an ohmic contact layer 26a and a reflective layer 26 b. The ohmic contact layer 26 a is inpartial contact with the second conductivity type semiconductor layer 23b, for example, a p-type semiconductor layer. The ohmic contact layer 26a may be formed in a limited area to prevent absorption of light by theohmic contact layer 26 a. The ohmic contact layers 26 a may be formed onthe second conductivity type semiconductor layer 23 b exposed in theopenings of the insulation layer 25. The ohmic contact layers 26 aspaced apart from each other may be formed in multiple regions of thefirst LED stack 23 to assist current distribution in the secondconductivity type semiconductor layer 23 b. The ohmic contact layer 26 amay be formed of a transparent conductive oxide or an Au alloy, such asAu(Zn) or Au(Be).

The reflective layer 26 b covers the ohmic contact layer 26 a and theinsulation layer 25. The reflective layer 26 b covers the insulationlayer 25, such that an omnidirectional reflector may be formed by astacked structure of the first LED stack 23 having a relatively highrefractive index, the insulation layer 25 having a relatively lowrefractive index, and the reflective layer 26 b. The reflective layer 26b may include a reflective metal layer such as Al, Ag, or Au. Inaddition, the reflective layer 26 b may include an adhesive metal layer,such as Ti, Ta, Ni, or Cr on upper and lower surfaces of the reflectivemetal layer to improve adhesion of the reflective metal layer. Au isparticularly suitable for the reflective layer 26 b formed in the firstLED stack 23 due to its high reflectance to red light and lowreflectance to blue or green light. The reflective layer 26 b may cover50% or more of an area of the first LED stack 23, and in some exemplaryembodiments, may cover most of the first LED stack 23 to improve lightefficiency.

The ohmic contact layer 26 a and the reflective layer 26 b may be formedof a metal layer including Au. The reflective layer 26 b may be formedof a metal layer having a high reflectance to light generated in thefirst LED stack 23, for example, red light. The reflective layer 26 bmay have a low reflectance to light generated in the second LED stack 33and the third LED stack 43, for example, green light or blue light.Therefore, the reflective layer 26 b may absorb light generated in thesecond and third LED stacks 33 and 43 and incident on the reflectivelayer 26 b to reduce or prevent optical interference.

The first ohmic electrode 28 is disposed on the exposed firstconductivity type semiconductor layer 23 a, and is in ohmic contact withthe first conductivity type semiconductor layer 23 a. The first ohmicelectrode 28 may also be formed of a metal layer including Au.

The protective layer 29 may protect the first reflective electrode 26 bycovering the first reflective electrode 26. However, the protectivelayer 29 may expose the first ohmic electrode 28.

The second transparent electrode 35 is in ohmic contact with the secondconductivity type semiconductor layer 33 b of the second LED stack 33.The second transparent electrode 35 may contact a lower surface of thesecond LED stack 33 between the second LED stack 33 and the third LEDstack 43. The second transparent electrode 35 may be formed of a metallayer or a conductive oxide layer that is transparent to red light andgreen light.

The third transparent electrode 45 is in ohmic contact with the secondconductivity type semiconductor layer 43 b of the third LED stack 43.The third transparent electrode 45 may be disposed between the secondLED stack 33 and the third LED stack 43, and may contact the uppersurface of the third LED stack 43. The third transparent electrode 45may be formed of a metal layer or a conductive oxide layer that istransparent to red light and green light. The third transparentelectrode 45 may also be transparent to blue light. The secondtransparent electrode 35 and the third transparent electrode 45 may bein ohmic contact with the p-type semiconductor layer of each LED stackto assist current distribution. Examples of the conductive oxide layerused for the second and third transparent electrodes 35 and 45 mayinclude SnO₂, InO₂, ITO, ZnO, IZO, or others.

The first color filter 47 may be disposed between the third transparentelectrode 45 and the second LED stack 33, and the second color filter 67may be disposed between the second LED stack 33 and the first LED stack23. The first color filter 47 may transmit light generated in the firstand second LED stacks 23 and 33, and reflect light generated in thethird LED stack 43. The second color filter 67 may transmit lightgenerated in the first LED stack 23, and reflect light generated in thesecond LED stack 33. Therefore, light generated in the first LED stack23 may be emitted to the outside through the second LED stack 33 and thethird LED stack 43, and the light generated in the second LED stack 33may be emitted to the outside through the third LED stack 43.Furthermore, light generated in the second LED stack 33 may be preventedfrom being lost by being incident on the first LED stack 23, or lightgenerated in the third LED stack 43 may be prevented from being lost bybeing incident on the second LED stack 33.

In some exemplary embodiments, the second color filter 67 may reflectthe light generated in the third LED stack 43.

The first and second color filters 47 and 67 may be, for example, a lowpass filter that passes only a low frequency range, that is, a longwavelength band, a band pass filter that passes only a predeterminedwavelength band, or a band stop filter that blocks only a predeterminedwavelength band. In particular, the first and second color filters 47and 67 may be formed by alternately stacking insulation layers havingrefractive indices different from each other, for example, may be formedby alternately stacking TiO₂ and SiO₂ insulation layers. In particular,the first and second color filters 47 and 67 may include a distributedBragg reflector (DBR). A stop band of the distributed Bragg reflectormay be controlled by adjusting thicknesses of TiO₂ and SiO₂. The lowpass filter and the band pass filter may also be formed by alternatelystacking insulation layers having refractive indices different from eachother.

The 2-1-th current distributing layer 36 may be disposed on a lowersurface of the second transparent electrode 35. The 2-1-th currentdistributing layer 36 may be electrically connected to the secondconductivity type semiconductor layer 33 b of the second LED stack 33through the second transparent electrode 35.

The 2-2-th current distributing layer 38 may be disposed on the secondcolor filter 67, penetrate through the second color filter 67, and beelectrically connected to the first conductivity type semiconductorlayer 33 a of the second LED stack 33. The second color filter 67 mayhave an opening exposing the second LED stack 33, and the 2-2-th currentdistributing layer 38 may be connected to the second LED stack 33through the opening of the second color filter 67.

The third current distributing layer 46 may be disposed on the firstcolor filter 47, penetrate through the first color filter 47, and beconnected to the second conductivity type semiconductor layer 43 b ofthe third LED stack 43. The first color filter 47 may have an openingexposing the third LED stack 43, and the third current distributinglayer 46 may be connected to the third LED stack 43 through the openingof the first color filter 47.

The current distributing layers 36, 38, and 46 may be formed of a metallayer to assist current distribution. For example, the 2-1-th currentdistributing layer 36 may include a pad region 36 a and an extendingportion 36 b extending from the pad region 36 a (see FIG. 4A). The2-2-th current distributing layer 38 includes a pad region 38 a and anextending portion 38 b extending from the pad region 38 a, and the thirdcurrent distributing layer 46 includes a pad region 46 a and anextending portion 46 b extending from the pad region 46 a. The padregions 36 a, 38 a, and 46 a are regions to which the electrode pads 81d and 81 b may be connected, and the extending portions 36 b, 38 b, and46 b may assist current distribution. The extending portions 36 b, 38 b,and 46 b may be formed in various shapes so that a current may beuniformly distributed in the second and third stacks 33 and 43.

The planarization layer 39 covers the 2-1-th current distributing layer36 below the second LED stack 33, and provides a flat surface. Theplanarization layer 39 may be formed of a transparent layer, and may beformed of SiO₂, spin on glass (SOG), or the like.

The first bonding layer 49 couples the second LED stack 33 to the thirdLED stack 43. The first bonding layer 49 covers the first color filter47, and is bonded to the planarization layer 39. The planarization layer39 may also be used as a bonding layer. For example, the first bondinglayer 49 and the planarization layer 39 may be a transparent organiclayer or a transparent inorganic layer, and be bonded to each other.Examples of the organic layer may include SU8, poly(methylmethacrylate)(PMMA), polyimide, parylene, benzocyclobutene (BCB), or others, andexamples of the inorganic layer include Al₂O₃, SiO₂, SiN_(x), or thelike. The organic layers may be bonded at a high vacuum and a highpressure, and the inorganic layers may be bonded under a high vacuumwhen the surface energy is lowered by using plasma or the like, afterflattening surfaces by, for example, a chemical mechanical polishingprocess.

The second bonding layer 69 couples the second LED stack 33 to the firstLED stack 23. As illustrated in the drawing, the second bonding layer 69may cover the second color filter 67 and the 2-2-th current distributinglayer 38. The second bonding layer 69 may be in contact with the firstLED stack 23, but is not limited thereto. In some exemplary embodiments,another planarization layer may be disposed on a lower surface of thefirst LED stack 23, and the second bonding layer 69 may be bonded to theanother planarization layer. The second bonding layer 69 and the anotherplanarization layer may be formed of the same material as that of thefirst bonding layer 49 and the planarization layer 39 described above.

The upper insulation layer 71 covers side surfaces and upper regions ofthe first, second, and third LED stacks 23, 33, and 43. The upperinsulation layer 71 may be formed of SiO₂, Si₃N₄, SOG, or others. Insome exemplary embodiments, the upper insulation layer 71 may include alight reflecting material or a light blocking material to preventoptical interference with an adjacent light emitting device. Forexample, the upper insulation layer 71 may include a distributed Braggreflector that reflects red light, green light, and blue light, or anSiO₂ layer with a reflective metal layer or a highly reflective organiclayer deposited thereon. Alternatively, the upper insulation layer 71may include a black epoxy, as the light blocking material, for example.A light blocking material may prevent optical interference between lightemitting devices and increase a contrast of an image.

The upper insulation layer 71 has openings exposing the first ohmicelectrode 28, the first reflective electrode 26, the third ohmicelectrode 48, the 2-1-th current distributing layer 36, the 2-2-thcurrent distributing layer 38, and the third current distributing layer46.

The electrode pads 81 a, 81 b, 81 c, and 81 d are disposed above thefirst LED stack 23, and are electrically connected to the first, second,and third LED stacks 23, 33, and 43. The electrode pads 81 a, 81 b, 81c, and 81 d are disposed on the upper insulation layer 71, and may beconnected to the first ohmic electrode 28, the first reflectiveelectrode 26, the third ohmic electrode 48, the 2-1-th currentdistributing layer 36, the 2-2-th current distributing layer 38, and thethird current distributing layer 46 exposed through the openings of theupper insulation layer 71.

For example, the first electrode pad 81 a may be connected to the firstohmic electrode 28 through the opening of the upper insulation layer 71.The first electrode pad 81 a may be electrically connected to the firstconductivity type semiconductor layer 23 a of the first LED stack 23.

The second electrode pad 81 b may be connected to the 2-2-th currentdistributing layer 38 through the opening of the upper insulation layer71. The second electrode pad 81 b may be electrically connected to thefirst conductivity type semiconductor layer 33 a of the second LED stack33.

The third electrode pad 81 c may be connected to the third ohmicelectrode 48 through the opening of the upper insulation layer 71, andmay be electrically connected to the first conductivity typesemiconductor layer 43 a of the third LED stack 43.

The common electrode pad 81 d may be connected in common to the 2-1-thcurrent distributing layer 36, the third current distributing layer 46,and the first reflective electrode 26 through the openings. The commonelectrode pad 81 d may be electrically connected in common to the secondconductivity type semiconductor layer 23 b of the first LED stack 23,the second conductivity type semiconductor layer 33 b of the second LEDstack 33, and the second conductivity type semiconductor layer 43 b ofthe third LED stack 43.

As illustrated in FIG. 2 , the common electrode pad 81 d may beconnected to an upper surface of the third current distributing layer 46and an upper surface of the 2-1-th current distributing layer 36. Assuch, the 2-1-th current distributing layer 36 may have substantially anannular shape, and the common electrode pad 81 d may be connected to thethird current distributing layer 46 through a central region of the2-1-th current distributing layer 36.

According to the illustrated exemplary embodiment, the first LED stack23 is electrically connected to the electrode pads 81 d and 81 a, thesecond LED stack 33 is electrically connected to the electrode pads 81 dand 81 b, and the third LED stack 43 is electrically connected to theelectrode pads 81 d and 81 c. As such, anodes of the first LED stack 23,the second LED stack 33, and the third LED stack 43 are electricallyconnected in common to the common electrode pad 81 d, and cathodes ofthe first LED stack 23, the second LED stack 33, and the third LED stack43 are electrically connected to the first, second, and third electrodepads 81 a, 81 b, and 81 c, respectively. In this manner, the first,second, and third LED stacks 23, 33, and 43 may be independently driven.

FIGS. 3A, 3B, 4A, 4B, 5A, 5B, 6A, 6B, 7A, 7B, 8A, 8B, 9A, 9B, 10A, 10B,11A, 11B, 12A, 12B, 13A, and 13B are schematic plan views andcross-sectional views illustrating a method of manufacturing a lightemitting device 100 according to an exemplary embodiment. In thedrawings, each plan view is illustrated corresponding to a plan view ofFIG. 1 , and each cross-sectional view (except FIG. 4B) is taken alongline A-A of corresponding plan view. FIG. 4B is a cross-sectional viewtaken along line B-B of FIG. 4A.

Referring to FIGS. 3A and 3B, the first LED stack 23 is grown on a firstsubstrate 21. The first substrate 21 may be, for example, a GaAssubstrate. The first LED stack may be formed of AlGaInP basedsemiconductor layers, and includes the first conductivity typesemiconductor layer 23 a, the active layer, and the second conductivitytype semiconductor layer 23 b. The first conductivity type may be ann-type and the second conductivity type may be a p-type.

The insulation layer 25 is formed on the first LED stack 23, andopenings may be formed thereon by patterning the insulation layer 25.For example, SiO₂ is formed on the first LED stack 23, a photoresist isapplied to SiO₂, and a photoresist pattern is then formed usingphotolithography and development. Then, SiO₂ may be patterned using thephotoresist pattern as an etching mask to form the insulation layer 25having the openings.

Then, the ohmic contact layer 26 a is formed in the openings of theinsulation layer 25. The ohmic contact layer 26 a may be formed by alift-off technology or the like. After the ohmic contact layer 26 a isformed, the reflective layer 26 b covering the ohmic contact layer 26 aand the insulation layer 25 is formed. The reflective layer 26 b may beformed of, for example, Au, and may be formed using a lift-off techniqueor the like. The first reflective electrode 26 may be formed by theohmic contact layer 26 a and the reflective layer 26 b.

The first reflective electrode 26 may have a shape in which four cornerportions are removed from one rectangular light emitting device region,as illustrated in the drawing. The ohmic contact layers 26 a may bewidely distributed at a lower portion of the first reflective electrode26. While FIGS. 3A and 3B show one light emitting device region, aplurality of light emitting device regions may be provided on the firstsubstrate 21, and the first reflective electrode 26 may be formed ineach light emitting device region.

The protective layer 29 may cover the first reflective electrode 26. Theprotective layer 29 may protect the first reflective electrode 26 froman external environment. The protective layer 29 may be formed of, forexample, SiO₂, Si₃N₄, SOG, or others.

Then, the protective layer 29 and the second conductivity typesemiconductor layer 23 b may be etched to expose the first conductivitytype semiconductor layer 23 a, and the first ohmic electrode 28 isformed on the exposed first conductivity type semiconductor layer 23 a.The first ohmic electrode 28 is in ohmic contact with the firstconductivity type semiconductor layer 23 a.

Referring to FIGS. 4A and 4B, the second LED stack 33 is grown on asecond substrate 31, and the second transparent electrode 35 is formedon the second LED stack 33. The second LED stack 33 may be formed ofgallium nitride based semiconductor layers, and may include the firstconductivity type semiconductor layer 33 a, the active layer, and thesecond conductivity type semiconductor layer 33 b. The active layer mayinclude a GaInN well layer. The first conductivity type may be an n-typeand the second conductivity type may be a p-type.

The second substrate 31 is a substrate on which a gallium nitride basedsemiconductor layer may be grown, and may be different from the firstsubstrate 21. A composition ratio of the GaInN well layer may bedetermined such that the second LED stack 33 may emit green light, forexample. The second transparent electrode 35 is in ohmic contact withthe second conductivity type semiconductor layer 33 b.

The 2-1-th current distributing layer 36 is formed on the secondtransparent electrode 35. The 2-1-th current distributing layer 36 maybe formed of a metal layer. The 2-1-th current distributing layer 36 mayinclude the pad region 36 a and the extending portion 36 b. The padregion 36 a may have an opening 36h having substantially an annularshape and exposing the second transparent electrode 35. The extendingportion 36 b extends from the pad region 36 a, and may extendsubstantially in a diagonal direction as illustrated in the drawing, butis not limited thereto. The extending portion 36 b may have variousshapes. Although FIGS. 4A and 4B show one light emitting device region,a plurality of light emitting device regions may be provided on thesecond substrate 31, and the 2-1-th current distributing layer 36 may beformed in each light emitting device region.

The planarization layer 39 covering the 2-1-th current distributinglayer 36 and the second transparent electrode 35 is formed. Theplanarization layer 39 provides a flat surface on the 2-1-th currentdistributing layer 36. The planarization layer 39 may be formed of alight-transmissive SOG, or the like, and the planarization layer 39 maybe used as a bonding layer.

Referring to FIGS. 5A and 5B, the third LED stack 43 is grown on a thirdsubstrate 41, and the third transparent electrode 45 and the first colorfilter 47 are formed on the third LED stack 43. The third LED stack 43may be formed of gallium nitride based semiconductor layers, and mayinclude the first conductivity type semiconductor layer 43 a, the activelayer, and the second conductivity type semiconductor layer 43 b. Theactive layer may also include a GaInN well layer. The first conductivitytype may be an n-type and the second conductivity type may be a p-type.

The third substrate 41 is a substrate on which a gallium nitride basedsemiconductor layer may be grown, and may be different from the firstsubstrate 21. A composition ratio of GaInN may be determined such thatthe third LED stack 43 emits blue light, for example. The thirdtransparent electrode 45 is in ohmic contact with the secondconductivity type semiconductor layer 43 b.

Since the first color filter 47 is substantially the same as thatdescribed with reference to FIGS. 2A and 2B, detailed descriptionsthereof will be omitted to avoid redundancy.

The first color filter 47 may be patterned to form openings 47 a, 47 b,and 47 c exposing the third transparent electrode 45. In addition, thethird transparent electrode 45 and the second conductivity typesemiconductor layer 43 b exposed in the opening 47 a may be sequentiallypatterned to expose the first conductivity type semiconductor layer 43a.

The third ohmic electrode 48 is formed on the exposed first conductivitytype semiconductor layer 43 a, and the third current distributing layer46 is formed. The third current distributing layer 46 is in contact withthe third transparent electrode 45 through the openings 47 b and 47 c.The third current distributing layer 46 may include the pad region 46 aand the extending portion 46 b. The pad region 46 a may be in contactwith the third transparent electrode 45 through the opening 47 b, andthe extending portion 46 b may be in contact with the third transparentelectrode 45 through the opening 47 c. The third current distributinglayer 46 and the third ohmic electrode 48 may include the same material,such as metal.

The planarization layer or the first bonding layer 49 is formed on thethird current distributing layer 46 and the third ohmic electrode 48.The first bonding layer 49 may be formed of light-transmissive SOG.

Referring to FIGS. 6A and 6B, the first LED stack 23 of FIGS. 3A and 3Bis bonded onto a carrier substrate 51. The first LED stack 23 may bebonded to the carrier substrate 51 through an adhesive layer 53. Inparticular, the protective layer 29 may be disposed to face the carriersubstrate 51. Then, the first substrate 21 is removed from the first LEDstack 23. As such, the first conductivity type semiconductor layer 23 ais exposed. In order to improve light extraction efficiency, a surfaceof the exposed first conductivity type semiconductor layer 23 a may betextured.

Hereinafter, processes of manufacturing a light emitting device bycoupling the first, second, and third LED stacks 23, 33, and 43manufactured by the above processes to each other, and patterning thefirst, second, and third LED stacks 23, 33, and 43 will be described.

Referring to FIGS. 7A and 7B, the second LED stack 33 of FIGS. 4A and 4Bis bonded onto the third LED stack 43 of FIGS. 5A and 5B.

The first bonding layer 49 and the planarization layer 39 are disposedto face each other to align the third current distributing layer 46 andthe 2-1-th current distributing layer 36. In particular, a centralportion of the pad region 36 a of the 2-1-th current distributing layer36 is aligned above the pad region 46 a of the third currentdistributing layer 46.

Then, the second substrate 31 is removed from the second LED stack 33 bya technique, such as a laser lift-off, a chemical lift-off, or others.As such, the first conductivity type semiconductor layer 33 a of thesecond LED stack 33 is exposed from the above. In some exemplaryembodiments, a surface of the exposed first conductivity typesemiconductor layer 33 a may be textured.

Referring to FIGS. 8A and 8B, the second color filter 67 is formed onthe exposed first conductivity type semiconductor layer 33 a. Since thesecond color filter 67 is substantially the same as that described withreference to FIGS. 2A and 2B, detailed descriptions thereof will beomitted to avoid redundancy.

Then, the second color filter 67 may be patterned to form openingsexposing the second LED stack 33, and the 2-2-th current distributinglayer 38 is formed on the second color filter 67. The 2-2-th currentdistributing layer 38 is formed to correspond to each light emittingdevice region, and includes the pad region 38 a and the extendingportion 38 b extending from the pad region 38 a. A specific shape of theextending portion 38 b is not particularly limited, and may have variousshapes for current distribution in the second LED stack 33.

Then, the second bonding layer 69 covers the 2-2-th current distributinglayer 38 and the second color filter 67. The second bonding layer 69 maybe light-transmissive organic layer or inorganic layer. As such, a flatsurface may be provided on an upper surface of the second LED stack 33.

Then, referring to FIGS. 9A and 9B, the first LED stack 23 of FIGS. 6Aand 6B is bonded onto the second LED stack 33. The exposed firstconductivity type semiconductor layer 23 a of the first LED stack 23 maybe bonded to the second bonding layer 69. Alternatively, anotherplanarization layer may be additionally formed on the first conductivitytype semiconductor layer 23 a, and the another planarization layer andthe second bonding layer 69 may be bonded to each other.

Then, the carrier substrate 51 and the adhesive layer 53 are removed. Assuch, the protective layer 29 and the first ohmic electrode 28 may beexposed.

Referring to FIGS. 10A and 10B, the protective layer 29 and theinsulation layer 25 may be patterned, such that the first LED stack 23is exposed around the first reflective electrode 26, and the first LEDstack 23 and the second bonding layer 69 may then be sequentiallypatterned, such that the 2-2-th current distributing layer 38 isexposed. In addition, the second color filter 67 may be exposed aroundthe first reflective electrode 26. The pad region 38 a and the extendingportion 36 b of the 2-2-th current distributing layer 38 may bepartially exposed.

Meanwhile, a portion of the first conductivity type semiconductor layer23 a, on which the first ohmic electrode 28 is disposed at one cornerportion of the light emitting device region, may be remained.

Referring to FIGS. 11A and 11B, the second color filter 67, the secondLED stack 33, the second transparent electrode 35, the planarizationlayer 39, the first bonding layer 49 may be sequentially patterned, suchthat the third current distributing layer 46 and the third ohmicelectrode 48 are exposed. In addition, the pad region 36 a of the 2-1-thcurrent distributing layer 36 is exposed, and a through-hole penetratingthrough a central portion of the pad region 36 a is formed.

Through-holes exposing the third current distributing layer 46 and thethird ohmic electrode 48 may be formed. The second color filter 67, thesecond LED stack 33, the second transparent electrode 35, theplanarization layer 39, and the first bonding layer 49 are sequentiallyremoved in edge portions of the light emitting device regions, and thethird transparent electrode 45 and the third LED stack 43 are removed,such that an upper surface of the substrate 41 may be exposed. Theexposed region of the substrate 41 may be a dicing region for dicing thesubstrate 41 into multiple the light emitting devices.

Although the third current distributing layer 46 and the third ohmicelectrode 48 are described as being exposed through the through-holes,in some exemplary embodiments, the second color filter 67, the secondLED stack 33, the second transparent electrode 35, the planarizationlayer 39, and the first bonding layer 49 disposed around the firstreflective electrode 26 may be sequentially removed, and the thirdcurrent distributing layer 46 and the third ohmic electrode 48 may thusbe disposed adjacent to a side surface of the second LED stack 33.

Referring to FIGS. 12A and 12B, the upper insulation layer 71 is formedto cover the side surfaces and the upper regions of the first, second,and third LED stacks 23, 33, and 43. The upper insulation layer 71 maybe formed of a single layer or multiple layers of SiO₂, Si₃N₄, SOG, orothers. Alternatively, the upper insulation layer 71 may include adistributed Bragg reflector formed by alternately depositing SiO₂ andTiO₂.

Then, the upper insulation layer 71 is patterned using photolithographyand etching techniques to form openings 71 a, 71 b, 71 c, 71 d, and 71e. The opening 71 a exposes the third current distributing layer 46 andthe 2-1-th current distributing layer 36. The opening 71 b exposes thefirst reflective electrode 26. The opening 71 a and the opening 71 b maybe disposed adjacent to each other. In addition, the first reflectiveelectrode 26 may be exposed by a plurality of openings 71 a, 71 b, 71 c,71 d, and 71 e.

The opening 71 c exposes the first ohmic electrode 28, the opening 71 dexposes the 2-2-th current distributing layer 38, and the opening 71 eexposes the third ohmic electrode 48.

The upper insulation layer 71 may be removed at an edge of the lightemitting device region. As such, the upper surface of the substrate 41may be exposed in the dicing region.

Referring to FIGS. 13A and 13B, the electrode pads 81 a, 81 b, 81 c, and81 d are formed on the upper insulation layer 71. The electrode pads 81a, 81 b, 81 c, and 81 d include the first electrode pad 81 a, the secondelectrode pad 81 b, the third electrode pad 81 c, and the commonelectrode pad 81 d.

The common electrode pad 81 d is connected to the 2-1-th currentdistributing layer 36 and the third current distributing layer 46through the opening 71 a, and is connected to the first reflectiveelectrode 26 through the opening 71 b. As such, the common electrode pad81 d is electrically connected in common in the anodes of the first,second, and third LED stacks 23, 33, and 43.

The first electrode pad 81 a is connected to the first ohmic electrode28 through the opening 71 c, to be electrically connected to the cathodeof the first LED stack 23, e.g., the first conductivity typesemiconductor layer 23 a. The second electrode pad 81 b is connected tothe 2-2-th current distributing layer 38 through the opening 71 d to beelectrically connected to the cathode of the second LED stack 33, e.g.,the first conductivity type semiconductor layer 33 a, and the thirdelectrode pad 81 c is connected to the third ohmic electrode 48 throughthe opening 71 e to be electrically connected to the cathode of thethird LED stack 43, e.g., the first conductivity type semiconductorlayer 43 a.

The electrode pads 81 a, 81 b, 81 c, and 81 d are electrically separatedfrom each other, such that each of the first, second, and third LEDstacks 23, 33, and 43 is electrically connected to two electrode pads tobe independently driven.

Then, the light emitting device 100 may be formed by dividing thesubstrate 41 into multiple light emitting device regions. As illustratedin FIG. 13A, the electrode pads 81 a, 81 b, 81 c, and 81 d may bedisposed at four corners of each light emitting device 100. In addition,the electrode pads 81 a, 81 b, 81 c, and 81 d may have substantially arectangular shape, but the inventive concepts are not limited thereto.

Although the substrate 41 is described as being divided, in someexemplary embodiments, the substrate 41 may be removed, and the surfaceof the exposed first conductivity type semiconductor layer 43 a may thusbe textured. The substrate 41 may be removed after the first LED stack23 is bonded onto the second LED stack 33 or may be removed after theelectrode pads 81 a, 81 b, 81 c, and 81 d are formed.

According to the exemplary embodiments, a light emitting device includesthe first, second, and third LED stacks 23, 33, and 43, in which theanodes of the LED stacks are electrically connected in common, andcathodes thereof are independently connected. However, the inventiveconcepts are not limited thereto, and the anodes of the first, second,and third LED stacks 23, 33, and 43 may be independently connected tothe electrode pads, and the cathodes thereof may be electricallyconnected in common.

The light emitting device 100 may include the first, second, and thirdLED stacks 23, 33, and 43 to emit red, green, and blue light, and maythus be used as a single pixel in a display apparatus. As described withreference to FIG. 1 , a display apparatus may be provided by arranging aplurality of light emitting devices 100 on the circuit board 101. Sincethe light emitting device 100 includes the first, second, and third LEDstacks 23, 33, and 43, an area of the subpixel in one pixel may beincreased. Further, the first, second, and third LED stacks 23, 33, and43 may be mounted by mounting one light emitting device 100, therebyreducing the number of mounting processes.

As described with reference to FIG. 1 , the light emitting devices 100mounted on the circuit board 101 may be driven by a passive matrixmethod or an active matrix method.

FIG. 14 is a schematic plan view of a display apparatus according to anexemplary embodiment.

Referring to FIG. 14 , a display apparatus includes a circuit board 201and a plurality of light emitting devices 200.

The circuit board 201 may include a circuit for passive matrix drivingor active matrix driving. In an exemplary embodiment, the circuit board201 may include wires and resistors disposed therein. In anotherexemplary embodiment, the circuit board 201 may include wires,transistors, and capacitors. The circuit board 201 may have padsdisposed on an upper surface thereof to allow electrical connection tocircuits disposed therein.

The plurality of light emitting devices 200 are arranged on the circuitboard 201. Each light emitting device 200 may constitute one pixel. Thelight emitting device 200 has bump pads 251 a, 251 b, 251 c, and 251 d,and the bump pads 251 a, 251 b, 251 c, and 251 d are electricallyconnected to the circuit board 201. The light emitting devices 200 aredisposed on the circuit board 201 as separate chips and are spaced apartfrom each other. An upper surface of each light emitting device 200 maybe a surface of an LED stack 243, for example, a surface of an n-typesemiconductor layer. Further, the surface of the LED stack 243 mayinclude a roughened surface formed by a surface texturing. However, insome exemplary embodiments, the surface of the LED stack 243 may becovered with a light-transmissive insulating layer.

A specific configuration of the light emitting device 200 will bedescribed in detail with reference to FIGS. 15A and 15B. In addition, alight emitting device 2000 of FIGS. 27A and 27B, or a light emittingdevice 2001 of FIGS. 36A and 36B may also be arranged on the circuitboard 201 instead of the light emitting device 200.

FIG. 15A is a schematic plan view of a light emitting device 200according to an exemplary embodiment, and FIG. 15B is a cross-sectionalview taken along line A-B of FIG. 15A.

Referring to FIGS. 15A and 15B, the light emitting device 200 mayinclude bump pads 251 a, 251 b, 251 c, and 251 d, a filler 253, a firstLED stack 223, a second LED stack 233, a third LED stack 243, insulatinglayers 225, 229, 261, and 271, a first reflective electrode 226, asecond transparent electrode 235, a third transparent electrode 245,first, second, and third ohmic electrodes 228 a, 238, and 248,connection pads 228 b and 228 c, a second current spreading layer 236, athird current spreading layer 246, a first color filter 237, a secondcolor filter 247, a first bonding layer 239, a second bonding layer 269,and connectors 268 b, 268 c, 268 d, 278 c, and 278 d.

The bump pads (or electrode pads) 251 a, 251 b, 251 c, and 251 d and thefiller 253 are disposed below the first LED stack 223, and support thefirst, second, and third LED stacks 223, 233, and 243. The bump pads 251a, 251 b, 251 c, and 251 d may include metal, such as copper (Cu),titanium (Ti), nickel (Ni), tantalum (Ta), platinum (Pt), palladium(Pd), chromium (Cr), or others. In some exemplary embodiments, amultilayer solder barrier layer may be formed on the upper surface ofthe bump pad, and a gold (Au) or silver (Ag) surface layer may beprovided on a surface of the bump pad to improve solder wettability. Thefiller 253 is formed of an insulating material. Since the bump pads 251a, 251 b, 251 c, and 251 d and the filler 253 may function as asupporting structure, a separate support substrate may be omitted. Anelectrical connection of the bump pads 251 a, 251 b, 251 c, and 251 dwill be described below in detail.

The LED stacks are disposed in the order of the first LED stack 223, thesecond LED stack 233 and the third LED stack 243 on the bump pads 251 a,251 b, 251 c, and 251 d. The first to third LED stacks 223, 233, and 243may be sequentially stacked one over another, and thus, the lightemitting device 200 has a single chip structure of a single pixel.

The first LED stack 223, the second LED stack 233, and the third LEDstack 243 include first conductivity type semiconductor layers 223 a,233 a, and 243 a, second conductivity type semiconductor layers 223 b,233 b, and 243 b, and active layers interposed between the firstconductivity type semiconductor layers 223 a, 233 a, and 243 a and thesecond conductivity type semiconductor layers 223 b, 233 b, and 243 b,respectively. In particular, the active layer may have a multiplequantum well structure. As illustrated, the second conductivity typesemiconductor layers 223 b, 233 b, and 243 b are disposed below someregions of the first conductivity type semiconductor layers 223 a, 233a, and 243 a, respectively, and therefore, the lower surfaces of thefirst conductivity type semiconductor layers 223 a, 233 a, and 243 a arepartially exposed.

The first to third LED stacks 222, 233, and 243 may emit light having alonger wavelength as being disposed closer to the bump pads 251 a, 251b, 251 c, and 251 d. For example, the first LED stack 223 may be aninorganic light emitting diode emitting red light, the second LED stack233 may be an inorganic light emitting diode emitting green light, andthe third LED stack 243 may be an inorganic light emitting diodeemitting blue light. The first LED stack 223 may include a GaInP basedwell layer, and the second LED stack 233 and the third LED stack 243 mayinclude a GaInN based well layer. However, the inventive concepts arenot limited thereto. When the light emitting device 200 includes a microLED, which has a surface area less than about 10,000 square μm as knownin the art, or less than about 4,000 square μm or 2,500 square μm inother exemplary embodiments, the first LED stack 223 may emit any one ofred, green, and blue light, and the second and third LED stacks 233 and243 may emit a different one of red, green, and blue light, withoutadversely affecting operation, due to the small form factor of a microLED.

Since the first LED stack 223 may emit light having a longer wavelengththan that of the second and third LED stacks 233 and 243, lightgenerated in the first LED stack 223 may be emitted to the outsidethrough the second and third LED stacks 233 and 243, and the thirdsubstrate 241. In addition, since the second LED stack 233 may emitlight having a longer wavelength than that of the third LED stack 243,light generated in the second LED stack 233 may be emitted to theoutside through the third LED stack 243 and the third substrate 241.

In addition, the first conductivity type semiconductor layers 223 a, 233a, and 243 a of the respective LED stacks 223, 233, and 243 may ben-type semiconductor layers, and the second conductivity typesemiconductor layers 223 b, 233 b, and 243 b of the respective LEDstacks 223, 233, and 243 may be p-type semiconductor layers. In theillustrated exemplary embodiment, an upper surface of the first LEDstack 223 is an n-type semiconductor layer 223 b, an upper surface ofthe second LED stack 233 is an n-type semiconductor layer 233 a, and anupper surface of the third LED stack 243 is an n-type semiconductorlayer 243 b. In an exemplary embodiment, the first LED stack 223, thesecond LED stack 233, and the third LED stack 243 may have the firstconductivity type semiconductor layers 223 a, 233 a, and 243 a withtextured surfaces, respectively, so as to improve light extractionefficiency. However, when the second LED stack 233 emits green light,since the green light has higher visibility than red light or bluelight, it is preferable to make luminous efficiency of the first LEDstack 223 and the third LED stack 243 higher than that of the second LEDstack 233. As such, luminous intensities of red light, green light, andblue light may be adjusted to be substantially uniform by applyingsurface texturing to the greater extent in the first LED stack 223 andthe third LED stack 243 than the second LED stack 233.

The insulating layer 225 is disposed below the first LED stack 223, andhas at least one opening exposing the second conductivity typesemiconductor layer 223 b of the first LED stack 223. The insulatinglayer 225 may have a plurality of openings widely distributed over thefirst LED stack 223. The insulating layer 225 may be a transparentinsulating layer having a refractive index lower than that of the firstLED stack 223.

The first reflective electrode 226 is in ohmic contact with the secondconductivity type semiconductor layer 223 b of the first LED stack 223,and reflects light generated in the first LED stack 223 toward thesecond LED stack 233. The first reflective electrode 226 is disposed onthe insulating layer 225, and is connected to the first LED stack 223through the openings of the insulating layer 225.

The first reflective electrode 226 may include an ohmic contact layer226 a and a reflective layer 226 b. The ohmic contact layer 226 a is inpartial contact with the second conductivity type semiconductor layer223 b, for example, a p-type semiconductor layer. The ohmic contactlayer 226 a may be formed in a limited area to prevent absorption oflight by the ohmic contact layer 226 a. The ohmic contact layers 226 amay be formed on the second conductivity type semiconductor layer 223 bexposed in the openings of the insulating layer 225. The ohmic contactlayers 226 a spaced apart from each other are formed in a plurality ofregions on the first LED stack 223 to assist current distribution in thesecond conductivity type semiconductor layer 223 b. The ohmic contactlayer 226 a may be formed of a transparent conductive oxide or an Aualloy such as Au(Zn) or Au(Be).

The reflective layer 226 b covers the ohmic contact layer 226 a and theinsulating layer 225. The reflective layer 226 b covers the insulatinglayer 225, such that an omnidirectional reflector may be formed by astacked structure of the first LED stack 223 having a relatively highrefractive index, and the insulating layer 225 and the reflective layer2261 a yer 226 b having a relatively low refractive index. Thereflective layer 226 b may include a reflective metal layer, such as Al,Ag, or Au. In addition, the reflective layer 226 b may include anadhesive metal layer, such as Ti, Ta, Ni, or Cr on upper and lowersurfaces of the reflective metal layer to improve adhesion of thereflective metal layer. Au may be particularly suitable for thereflective layer 226 b formed in the first LED stack 223 due to highreflectance to red light and low reflectance to blue light or greenlight. The reflective layer 226 b may cover 50% or more of an area ofthe first LED stack 223, and in some exemplary embodiment, may covermost of the area of the first LED stack 223 to improve light efficiency.

The reflective layer 226 b may be formed of a metal layer having a highreflectance for light generated in the first LED stack 223, for example,the red light. The reflective layer 226 b may have a relatively lowreflectance for light generated in the second LED stack 233 and thethird LED stack 243, for example, the green light or the blue light.Therefore, the reflective layer 226 b may absorb light generated in thesecond and third LED stacks 233 and 243 and incident on the reflectivelayer 226 b to decrease optical interference.

The first ohmic electrode 228 a is disposed on the exposed firstconductivity type semiconductor layer 223 a, and is in ohmic contactwith the first conductivity type semiconductor layer 223 a. The firstohmic electrode 228 a may be disposed between the first conductivitytype semiconductor layer 223 a and the first bump pad 251 a pad 251 a,as illustrated in FIG. 15B. The first ohmic electrode 228 a may also beformed of a metal layer containing Au.

The connection pads 228 b and 228 c may be formed together when thefirst reflective electrode 226 is formed, but the inventive concepts arenot limited thereto. For example, the connection pads 228 b and 228 cmay be formed together when the first ohmic electrode 228 a is formed,or through a separate process from the above mentioned processes.

The connection pads 228 b and 228 c are electrically insulated from thefirst reflective electrode 226 and the first ohmic electrode 228 a. Forexample, the connection pads 228 b and 228 c may be disposed below theinsulating layer 225 and insulated from the first LED stack 223.

The insulating layer 229 covers the first reflective electrode 226 toseparate the first reflective electrode 226 from the bump pads 251 a,251 b, 251 c, and 251 d. The insulating layer 229 includes openings 229a, 229 b, 229 c, and 229 d. The opening 229 a exposes the first ohmicelectrode 228 a, the opening 229 b exposes the connection pad 228 b, theopening 229 c exposes the connection pad 29 c, and the opening 229 dexposes the first reflective electrode 226.

A material of the insulating layer 229 may be SiO₂, Si₃N₄, SOG, or thelike, but is not limited thereto, and may include light transmissive orlight non-transmissive material.

The second transparent electrode 235 is in ohmic contact with the secondconductivity type semiconductor layer 233 b of the second LED stack 233.As illustrated in the drawing, the second transparent electrode 235 isin contact with a lower surface of the second LED stack 233 between thefirst LED stack 223 and the second LED stack 233. The second transparentelectrode 235 may be formed of a metal layer or a conductive oxide layerthat is transparent to red light. The second transparent electrode 235may also be transparent to green light.

The third transparent electrode 245 is in ohmic contact with the secondconductivity type semiconductor layer 243 b of the third LED stack 243.The third transparent electrode 245 may be disposed between the secondLED stack 233 and the third LED stack 243, and is in contact with alower surface of the third LED stack 243. The third transparentelectrode 245 may be formed of a metal layer or a conductive oxide layerthat is transparent to red light and green light. The third transparentelectrode 245 may also be transparent to blue light. The secondtransparent electrode 235 and the third transparent electrode 245 may bein ohmic contact with the p-type semiconductor layer of each LED stackto assist current distribution. Examples of the conductive oxide layerused for the second and third transparent electrodes 235 and 245 mayinclude SnO₂, InO₂, ITO, ZnO, IZO, or others.

The first color filter 237 may be disposed between the secondtransparent electrode 235 and the first LED stack 223, and the secondcolor filter 247 may be disposed between the second LED stack 233 andthe third LED stack 243. The first color filter 237 transmits lightgenerated in the first LED stack 223, and reflects the light generatedin the second LED stack 233. The second color filter 247 transmits lightgenerated in the first LED stack 223 and the second LED stack 233, andreflects light generated in the third LED stack 243. Therefore, lightgenerated in the first LED stack 223 may be emitted to the outsidethrough the second LED stack 233 and the third LED stack 243, and lightgenerated in the second LED stack 233 may be emitted to the outsidethrough the third LED stack 243. Furthermore, light generated in thesecond LED stack 233 may be prevented from being lost by being incidenton the first LED stack 223, or light generated in the third LED stack243 may be prevented from being lost by being incident on the second LEDstack 233.

In some exemplary embodiments, the first color filter 237 may alsoreflect the light generated in the third LED stack 243.

The first and second color filters 237 and 247 may be, for example, alow pass filter that passes only a low frequency range, that is, a longwavelength band, a band pass filter that passes only a predeterminedwavelength band, or a band stop filter that blocks only a predeterminedwavelength band. In particular, the first and second color filters 237and 247 may be formed by alternately stacking insulating layers havingrefractive indices different from each other, and for example, may beformed by alternately stacking TiO₂ and SiO₂ insulating layers, Ta₂O₅and SiO₂ insulating layers, Nb₂O₅ and SiO₂ insulating layers, HfO₂ andSiO₂ insulating layers, or ZrO₂ and SiO₂ insulating layers. Inparticular, the first and second color filters 237 and 247 may include adistributed Bragg reflector (DBR). A stop band of the distributed Braggreflector may be controlled by adjusting the thicknesses of TiO₂ andSiO₂. The low pass filter and the band pass filter may also be formed byalternately stacking insulating layers having refractive indicesdifferent from each other.

The second current spreading layer 236 may be electrically connected tothe second conductivity type semiconductor layer 233 b of the second LEDstack 233 through the second transparent electrode 235. The secondcurrent spreading layer 236 may be disposed on the lower surface of thefirst color filter 237 and connected to the second transparent electrode235 through the first color filter 237. The first color filter 237 mayhave an opening exposing the second LED stack 233, and the secondcurrent spreading layer 236 may be connected to the second transparentelectrode 235 through the opening of the first color filter 237.

The second current spreading layer 236 may include a pad region 236 aand an extension 236 b extending from the pad region 236 a (see FIGS.17A and 11B). In addition, the pad region 236 a may have substantially aring shape including a hollow portion. FIG. 17A shows the extension 236b being extended in a diagonal direction of the light emitting device200, but the inventive concepts are not limited thereto, and theextension 236 b may have various shapes.

The second current spreading layer 236 is formed of a metal layer havingsheet resistance lower than that of the second transparent electrode235, and thus, assists current distribution in the second LED stack 233.Furthermore, the second current spreading layer 236 is disposed belowthe first color filter 237, such that the first color filter 237reflects light generated in the second LED stack 233 and travelingtoward the second current spreading layer 236 to prevent light loss.

The second ohmic electrode 238 is in ohmic contact with the exposedlower surface of the first conductivity type semiconductor layer 233 a.The second ohmic electrode 238 may have substantially a ring shapehaving a hollow portion (see FIG. 17A). In some exemplary embodiment,the second ohmic electrode 238 may include an extension together with apad region for current distribution. The first color filter 237 maycover the first conductivity type semiconductor layer 233 a around thesecond ohmic electrode 238.

The third current spreading layer 246 may be electrically connected tothe second conductivity type semiconductor layer 243 b of the third LEDstack 243 through the third transparent electrode 245. The third currentspreading layer 246 may be disposed on the lower surface of the secondcolor filter 247 and connected to the third transparent electrode 245through the second color filter 247. The second color filter 247 mayhave an opening exposing the third LED stack 243, and the third currentspreading layer 246 may be connected to the third transparent electrode245 through the opening of the second color filter 247.

The third current spreading layer 246 may include a pad region 246 a andan extension 246 b extending from the pad region 246 a (see FIGS. 18Aand 18B). In addition, the pad region 246 a may have substantially aring shape including a hollow portion. FIG. 18A shows the extension 246b as being extended along an edge of one side of the light emittingdevice 200, but the inventive concepts are not limited thereto, and theextension 246 b may have various shapes.

The third current spreading layer 246 is formed of a metal layer havingsheet resistance lower than that of the third transparent electrode 245,and thus assists current distribution in the third LED stack 243. Thethird current spreading layer 246 is disposed below the second colorfilter 247, such that the second color filter 247 reflects lightgenerated in the third LED stack 243 and traveling toward the thirdcurrent spreading layer 246 to prevent light loss.

The third ohmic electrode 248 is in ohmic contact with the exposed lowersurface of the first conductivity type semiconductor layer 243 a. Thethird ohmic electrode 248 may have substantially a ring shape having ahollow portion. In some exemplary embodiments, the third ohmic electrode248 may include an extension together with a pad region for currentdistribution. The second color filter 247 may cover the firstconductivity type semiconductor layer 243 a around the third ohmicelectrode 248.

The first bonding layer 239 couples the second LED stack 233 to thefirst LED stack 223. The first bonding layer 239 may bond the first LEDstack 223 and the first color filter 237 to each other. The firstbonding layer 239 may be formed of a transparent organic layer, or maybe formed of a transparent inorganic layer. Examples of the organiclayer may include SUB, poly(methylmethacrylate) (PMMA), polyimide,parylene, benzocyclobutene (BCB), or others, and examples of theinorganic layer may include Al₂O₃, SiO₂, SiN_(x), or others. The organiclayers may be bonded at a high vacuum and a high pressure, and theinorganic layers may be bonded under a high vacuum when the surfaceenergy is adjusted by using plasma or others, after flattening surfacesby, for example, a chemical mechanical polishing process.

The second bonding layer 269 couples the third LED stack 243 to thesecond LED stack 233. As illustrated in the drawing, the second bondinglayer 269 may bond the second LED stack 233 and the second color filter247 to each other. The second bonding layer 269 may be in contact withthe second LED stack 233, but is not limited thereto. As illustrated inthe drawing, the insulating layer may be disposed on the second LEDstack 233, and the second bonding layer 269 may also be in contact withthe insulating layer 261. The second bonding layer 269 may be formed ofa transparent organic layer or a transparent inorganic layer.

The bump pads 251 a, 251 b, 251 c, and 251 d may be disposed below theinsulating layer 229. The bump pads 251 a, 251 b, 251 c, and 251 dinclude first to third bump pads 251 a, 251 b, and 251 c, and a commonbump pad 251 d.

The first bump pad 251 a is electrically connected to the firstconductivity type semiconductor layer 223 a of the first LED stack 223.The first bump pad 251 a may be connected to the first ohmic electrode228 a through the opening 229 a.

The second bump pad 251 b is electrically connected to the firstconductivity type semiconductor layer 233 a of the second LED stack 233.The second bump pad 251 b may be connected to the connection pad 228 bthrough the opening 229 b.

The third bump pad 251 c is electrically connected to the firstconductivity type semiconductor layer 243 a of the third LED stack 243.The third bump pad 251 c may be connected to the connection pad 228 cthrough the opening 229 c.

The common bump pad 251 d is electrically connected to the secondconductivity type semiconductor layers 223 a, 233 a, and 243 a of thefirst LED stack 223, the second LED stack 233, and the third LED stack243. The common bump pad 251 d may be connected to the first reflectiveelectrode 226 through the opening 229 d.

The connectors 268 b, 268 c, 268 d, 278 c, and 278 d are disposed toelectrically connect the second LED stack 233 and the third LED stack243 to the bump pads 251 b, 251 c, and 251 d.

The second connector 268 b electrically connects the first conductivitytype semiconductor layer 233 a of the second LED stack 233 to the secondbump pad 251 b. The second connector 268 b may be connected to the uppersurface of the second ohmic electrode 238 and the connection pad 228 b.The second connector 268 b and the second bump pad 251 b may be disposedabove and below the connection pad 228 b while having the connection pad228 b interposed therebetween to be electrically connected to each otherthrough the connection pad 228 b. However, the inventive concepts arenot limited thereto. For example, the connection pad 228 may be omittedand the second connector 268 b may be directly connected to the secondbump pad 251 b. However, the second bump pad 251 b and the secondconnector 268 b may be formed by separate processes, and may includematerials different from each other.

The second connector 268 b may penetrate through the first conductivitytype semiconductor layer 233 a of the second LED stack 233, and may bein contact with the first conductivity type semiconductor layer 233 a.The second connector 268 b is spaced apart from the second conductivitytype semiconductor layer 233 b and is insulated from the first LED stack223. To this end, the insulating layer 261 may cover a side wall of athrough hole in which the second connector 268 b is formed.

The third connector electrically connects the first conductivity typesemiconductor layer 243 a of the third LED stack 243 to the third bumppad 251 c. The third connector may include a 3-1-th connector 268 c anda 3-2-th connector 278 c.

The 3-1-th connector 268 c may penetrate through the first LED stack 223and the second LED stack 233, and may be connected to the connection pad228 c. The 3-1-th connector 268 c is insulated from the first LED stack223 and the second LED stack 233, and to this end, the insulating layer261 insulates the 3-1-th connector 268 c from the first and second LEDstacks 223 and 233.

According to an exemplary embodiment, the 3-1-th connector 268 c mayinclude a pad region on the second LED stack 233.

The 3-2-th connector 278 c may penetrate through the first conductivitytype semiconductor layer 243 a of the third LED stack 243 to beconnected to the third ohmic electrode 248 and the pad region of the3-1-th connector 268 c. The 3-2-th connector 278 c may be in contactwith the upper surface of the third ohmic electrode 248, and with thefirst conductivity type semiconductor layer 243 a.

The common connectors 268 d and 278 d electrically connect the secondconductivity type semiconductor layer 233 b of the second LED stack 233and the second conductivity type semiconductor layer 243 b of the thirdLED stack 243 to the common bump pad 251 d.

The first common connector 268 d may be connected to the secondtransparent electrode 235 and the first reflective electrode 226, and isthus electrically connected to the common bump pad 251 d. The firstcommon connector 268 d may penetrate through the second currentspreading layer 236. For example, when the second current spreadinglayer 236 includes the hollow portion, the first common connector 268 dmay pass through the hollow portion of the second current spreadinglayer 236. In the illustrated exemplary embodiment, the first commonconnector 268 d is connected to the second transparent electrode 235 andis spaced apart from the second current spreading layer 236, but is alsoelectrically connected to the second current spreading layer 236 throughthe second transparent electrode 235. In some exemplary embodiments, thefirst common connector 268 d may be directly connected to the secondcurrent spreading layer 236. For example, the upper surface of thesecond current spreading layer 236 may be exposed through the secondtransparent electrode 235 and the first color filter 237, and the firstcommon connector 268 d may be connected to the exposed upper surface ofthe second current spreading layer 236.

The first common connector 268 d may include a pad region to which thesecond common connector 278 d may be connected. The pad region of thefirst common connector 268 d may be provided on the first conductivitytype semiconductor layer 233 a of the second LED stack 233. However,since the first common connector 268 d needs to be insulated from thefirst conductivity type semiconductor layer 233 a, the insulating layer261 may be interposed between the first common connector 268 d and thefirst conductivity type semiconductor layer 233 a.

The second common connector 278 d may be connected to the thirdtransparent electrode 245 and the first common connector 268 d. Thesecond common connector 278 d may penetrate through the third LED stack243 to be connected to the third transparent electrode 245, and may thusbe connected to the upper surface of the third transparent electrode245. The second common connector 278 d is insulated from the firstconductivity type semiconductor layer 243 a, and to this end, theinsulating layer 271 may be interposed between the second commonconnector 278 d and the first conductivity type semiconductor layer 243a.

The second common connector 278 d may penetrate through the thirdcurrent spreading layer 246. For example, when the third currentspreading layer 246 includes the hollow portion, the second commonconnector 278 d may pass through the hollow portion of the third currentspreading layer 246. In the illustrated exemplary embodiment, the secondcommon connector 278 d is connected to the third transparent electrode245 and is spaced apart from the third current spreading layer 246, butis also electrically connected to the third current spreading layer 246through the third transparent electrode 245. In some exemplaryembodiments, the second common connector 278 d may be directly connectedto the third current spreading layer 246. For example, the upper surfaceof the third current spreading layer 246 may be exposed through thethird transparent electrode 245 and the second color filter 247, and thesecond common connector 278 d may be directly connected to the exposedupper surface of the third current spreading layer 246.

According to exemplary embodiments, the first LED stack 223 iselectrically connected to the bump pads 251 d and 251 a, the second LEDstack 233 is electrically connected to the bump pads 251 d and 251 b,and the third LED stack 243 is electrically connected to the bump pads251 d and 251 c. As such, anodes of the first LED stack 223, the secondLED stack 233, and the third LED stack 243 are electrically connected incommon to the bump pad 251 d, and cathodes of the first LED stack 223,the second LED stack 233, and the third LED stack 243 are electricallyconnected to the first, second, and third bump pads 251 a, 251 b, and251 c, respectively. In this manner, the first, second, and third LEDstacks 223, 233, and 243 may be independently driven.

FIGS. 16A, 16B, 17A, 17B, 18A, 18B, 19A, 19B, 20A, 20B, 21A, 21B, 22A,22B, 23A, 23B, 24A, 24B, 25A, 25B, 26A, and 26B are schematic plan viewsand cross-sectional views illustrating a method of manufacturing a lightemitting device 200 according to an exemplary embodiment. In thedrawings, each plan view corresponds to a plan view of FIG. 14A, andeach cross-sectional view is a cross-sectional view taken alongillustrated line of corresponding plan view.

Referring to FIGS. 16A and 16B, the first LED stack 223 is grown on afirst substrate 221. The first substrate 221 may be, for example, a GaAssubstrate. The first LED stack 223 may be formed of AlGaInP basedsemiconductor layers, and includes the first conductivity typesemiconductor layer 223 a, an active layer, and the second conductivitytype semiconductor layer 223 b. The first conductivity type may be ann-type and the second conductivity type may be a p-type.

Next, the second conductivity type semiconductor layer 223 b ispartially removed to expose the first conductivity type semiconductorlayer 223 a.

The insulating layer 225 is formed on the first LED stack 223, andopenings may be formed by patterning the insulating layer 225. Forexample, SiO₂ is formed on the first LED stack 223, a photoresist isapplied to SiO₂, and a photoresist pattern is then formed usingphotolithography and development. Then, SiO₂ may be patterned using thephotoresist pattern as an etching mask to form openings.

Then, the ohmic contact layer 226 a may be formed in each opening of theinsulating layer 225. The ohmic contact layer 226 a may be formed usinga lift-off technology or the like. After the ohmic contact layer 226 ais formed, the reflective layer 226 b covering the ohmic contact layer226 a and the insulating layer 225 is formed. The reflective layer 226 bmay be formed of, for example, Au, and may be formed using a lift-offtechnique or the like. The first reflective electrode 226 is formed bythe ohmic contact layer 226 a and the reflective layer 226 b.

The first reflective electrode 226 may have a shape in which threecorner portions are removed from one rectangular light emitting deviceregion, as illustrated in the drawing. In addition, the ohmic contactlayers 226 a may be widely distributed at a lower portion of the firstreflective electrode 226. Although FIG. 16A shows one light emittingdevice region, a plurality light emitting device regions may be providedon the first substrate 221, and the first reflective electrode 226 isformed in each light emitting device region.

The first ohmic electrode 228 a is formed on the exposed firstconductivity type semiconductor layer 223 a. The first ohmic electrode228 a is in ohmic contact with the first conductivity type semiconductorlayer 223 a, and is insulated from the second conductivity typesemiconductor layer 223 b.

The connection pads 228 b and 228 c may be formed on the insulatinglayer 225. The connection pads 228 b and 228 c may be formed togetherwith the reflective layer 226 b, or be formed together with the firstohmic electrode 228 a, but the inventive concepts are not limitedthereto, and may be formed by separate processes.

An insulating layer 229 is formed on the first reflective layer 226, thefirst ohmic electrode 228 a, and the connection pads 228 c and 228 d.The insulating layer 229 has openings 229 a, 229 b, 229 c, and 229 dthat expose the first ohmic electrode 228 a, the connection pads 228 cand 228 d, and the first reflective electrode 226, respectively. Theinsulating layer 229 may be formed of, for example, SiO₂, Si₃N₄, SOG, orothers.

Referring to FIGS. 17A and 17B, the second LED stack 233 is grown on asecond substrate 231, and the second transparent electrode 235 is formedon the second LED stack 233. The second LED stack 233 may be formed ofgallium nitride based semiconductor layers, and may include the firstconductivity type semiconductor layer 233 a, an active layer, and thesecond conductivity type semiconductor layer 233 b. The active layer mayinclude a GaInN well layer. The first conductivity type may be an n-typeand the second conductivity type may be a p-type.

The second substrate 231 is a substrate on which a gallium nitride basedsemiconductor layer may be grown, and may be different from the firstsubstrate 221. A composition ratio of the GaInN well layer may bedetermined so that the second LED stack 233 may emit green light, forexample. The second transparent electrode 235 is in ohmic contact withthe second conductivity type semiconductor layer 233 b.

The second transparent electrode 235 and the second conductivesemiconductor layer 233 b are partially removed to expose the firstconductivity type semiconductor layer 233 a. The exposed region of thefirst conductivity type semiconductor layer 233 a may be selected so asnot to overlap the exposed region of the first conductivity typesemiconductor layer 223 a.

The first color filter 237 is formed on the second transparent electrode235. The first color filter 237 may cover the exposed first conductivitytype semiconductor layer 233 a. Since the material forming the firstcolor filter 237 is substantially the same as that described withreference to FIGS. 15A and 15B, detailed descriptions thereof will beomitted to avoid redundancy.

The first color filter 237 is patterned to form openings exposing thesecond transparent electrode 235 and an opening exposing the firstconductivity type semiconductor layer 233 a.

Then, the second current spreading layer 236 is formed on the firstcolor filter 237. The second current spreading layer 236 is formed of ametal layer. The second current spreading layer 236 may include the padregion 236 a and the extension 236 b. The pad region 236 a may be formedto have substantially a ring shape and have a hollow region exposing thefirst color filter 237 at the center thereof. The extension 236 b mayextend from the pad region 236 a, and may be connected to the secondtransparent electrode 235 exposed through the opening of the first colorfilter 237. The extension 236 b may extend substantially in a diagonaldirection, but is not limited thereto. The extension 236 b may havevarious shapes. Although FIG. 17A shows one light emitting deviceregion, a plurality light emitting device regions may be provided on thesecond substrate 231, and the second current spreading layer 236 may beformed in each light emitting device region.

The second ohmic electrode 238 is formed on the first conductivity typesemiconductor layer 233 a. The second ohmic electrode 238 is in ohmiccontact with the first conductivity type semiconductor layer 233 a, andmay be formed of, for example, Ti/Al. A side surface of the second ohmicelectrode 238 may be in contact with the first color filter 237, andtherefore, it is possible to prevent light from being leaked into aregion between the second ohmic electrode 238 and the first color filter237. The second ohmic electrode 238 and the second current spreadinglayer 236 may also be formed together with each other by the sameprocess, or may be formed to include different materials from each otherthough a separate process.

Referring to FIGS. 18A and 18B, the third LED stack 243 is grown on athird substrate 241, and the third transparent electrode 245 is formedon the third LED stack 243. The third LED stack 243 may be formed ofgallium nitride based semiconductor layers, and may include the firstconductivity type semiconductor layer 243 a, an active layer, and thesecond conductivity type semiconductor layer 243 b. The active layer mayalso include a GaInN well layer. The first conductivity type may be ann-type and the second conductivity type may be a p-type.

The third substrate 241 is a substrate on which a gallium nitride basedsemiconductor layer may be grown, and may be different from the firstsubstrate 221. A composition ratio of GaInN may be determined so thatthe third LED stack 243 may emit blue light, for example. The thirdtransparent electrode 245 is in ohmic contact with the secondconductivity type semiconductor layer 243 b.

The third transparent electrode 245 and the second conductivesemiconductor layer 243 b are partially removed to expose the firstconductivity type semiconductor layer 243 a. The exposed region of thefirst conductivity type semiconductor layer 243 a may be selected so asnot to overlap the exposed regions of the first conductivity typesemiconductor layers 223 a and 233 a.

The second color filter 247 is formed on the third transparent electrode245. The second color filter 247 may also cover the exposed firstconductivity type semiconductor layer 243 a. Since the material formingthe second color filter 247 is substantially the same as that describedwith reference to FIGS. 15A and 15B, detailed descriptions thereof willbe omitted to avoid redundancy.

The second color filter 247 may be patterned to form openings exposingthe third transparent electrode 245 and an opening exposing the firstconductivity type semiconductor layer 243 a.

Then, the third current spreading layer 246 is formed on the secondcolor filter 247. The third current spreading layer 246 is formed of ametal layer. The third current spreading layer 246 may include the padregion 246 a and the extension 246 b. The pad region 246 a may be formedto have substantially a ring shape and have a hollow region exposing thesecond color filter 247 at the center thereof. A process of patterningthe third current spreading layer 246 may be omitted in a subsequentprocess by forming the hollow portion in the third current spreadinglayer 246 in advance, to simplify the process of manufacturing the lightemitting device 200. However, the inventive concepts are not limitedthereto, and the pad region 246 a may be formed without the hollowportion, and the hollow portion may be formed by patterning the padregion 246 a in a later process.

The extension 246 b may extend from the pad region 246 a, and may beconnected to the third transparent electrode 245 exposed through theopening of the second color filter 247. The extension 246 b may extendsubstantially along an edge as illustrated in the drawing, but is notlimited thereto. The extension 246 b may have various shapes. AlthoughFIG. 18A shows one light emitting device region, a plurality lightemitting device regions may be provided on the third substrate 241, andthe third current spreading layer 246 is formed in each light emittingdevice region.

The third ohmic electrode 248 is formed on the first conductivity typesemiconductor layer 243 a. The third ohmic electrode 248 is in ohmiccontact with the first conductivity type semiconductor layer 243 a, andmay be formed of, for example, Ti/Al. A side surface of the third ohmicelectrode 248 may be in contact with the second color filter 247, andtherefore, it is possible to prevent light from being leaked into aregion between the third ohmic electrode 248 and the second color filter247. The third ohmic electrode 248 and the third current spreading layer246 may also be formed together with each other by the same process, ormay be formed to include different materials from each other through aseparate process.

Referring to FIGS. 19A and 19B, the bump pads 251 a, 251 b, 251 c, and251 d are formed on the first LED stack 223 of FIGS. 16A and 16B. Thebump pads 251 a, 251 b, 251 c, and 251 d are formed on the insulatinglayer 229. The bump pads 251 a, 251 b, 251 c, and 251 d may include, forexample, a solder barrier layer, a body, and a surface layer. The solderbarrier layer may be formed of, for example, a single layer or amultilayer including at least one of Ti, Ni, Ta, Pt, Pd, Cr, and thelike, the body may be formed of Cu, and the surface layer may be formedof Au or Ag. The surface layer may improve wettability of a solder andassist in the mounting of the bump pads 251 a, 251 b, 251 c, and 251 d,and the solder barrier layer may prevent diffusion of metal material,such as Sn, in the solder to improve reliability of the light emittingdevice 200.

The first bump pad 251 a is connected to the first ohmic electrode 228 athrough the opening 229 a, the second bump pad 251 b is connected to theconnection pad 228 b through the opening 229 b, the third bump pad 251 cis connected to the connection pad 228 c through the opening 229 c, andthe common bump pad 251 d is connected to the first reflective electrode226 through the opening 229 d.

The filler 253 may fill regions between the bump pads 251 a, 251 b, 251c, and 251 d. The bump pads 251 a, 251 b, 251 c, and 251 d are formedfor each of the light emitting devices on the first substrate 221, andthe filler 253 fills the regions between these bump pads 251 a, 251 b,251 c, and 251 d.

Referring to FIGS. 20A and 20B, the first substrate 221 is then removedfrom the first LED stack 223. FIG. 20B illustrates an inverted view ofFIG. 19B. The bump pads 251 a, 251 b, 251 c, and 251 d and the filler253 may function as a supporting structure, and the first substrate 221may be removed from the first LED stack 223 through chemical etching orthe like. Therefore, the first conductivity type semiconductor layer 223a is exposed. In order to improve light extraction efficiency, a surfaceof the exposed first conductivity type semiconductor layer 223 a may betextured.

Referring to FIGS. 21A and 21B, the second LED stack 233 of FIGS. 17Aand 17B is bonded onto the first LED stack 223. Bonding material layersare formed on the first LED stack 223 and the first color filter 237,respectively, and are bonded to each other to form the first bondinglayer 239.

The second current spreading layer 236 and the bump pads 251 b and 251 dare bonded to each other to be aligned with each other. In particular, acentral portion of the pad region 236 a of the second current spreadinglayer 236 may be aligned to be positioned on the first reflectiveelectrode 226, and the second ohmic electrode 238 may be aligned to bepositioned on the connection pad 228 b.

Then, the second substrate 231 is removed from the second LED stack 233using a technology such as a laser lift-off technology, a chemicallift-off technology, or the like. Therefore, the first conductivity typesemiconductor layer 233 a of the second LED stack 233 is exposed fromthe above. In some exemplary embodiments, a surface of the exposed firstconductivity type semiconductor layer 233 a is textured to form aroughened surface.

Referring to FIGS. 22A and 22B, holes h1, h2, and h3 penetrating throughthe second LED stack 233 and the first LED stack 223 are then formed.The hole h1 and the hole h2 may sequentially penetrate through thesecond LED stack 233, the second transparent electrode 235, the firstcolor filter 237, the first bonding layer 239, the first LED stack 223,and the insulating layer 225. When the hollow portion is not formed inthe second current spreading layer 236, the second current spreadinglayer 236 is patterned when the hole h1 is formed, thereby forming thehollow portion. Meanwhile, the hole h1 may partially expose the uppersurface of the second transparent electrode 235, and exposes the uppersurface of the first reflective electrode 226. Although FIGS. 22A and22B show that the upper surface of the second transparent electrode 235is exposed by the hole h1, the upper surface of the second currentspreading layer 236 may also be exposed. The hole h2 exposes the uppersurface of the connection pad 228 c.

The hole h3 may penetrate through the first conductivity typesemiconductor layer 233 a to expose the upper surface of the secondohmic electrode 238, and may penetrate through the first bonding layer239, the first LED stack 223, and the insulating layer 225 to expose theconnection pad 228 b.

Referring to FIGS. 23A and 23B, the insulating layer 261 may be formedto cover side walls of the holes h1, h2, and h3. The insulating layer261 may also cover the upper surface of the second LED stack 233.

Next, the connectors 268 b, 268 c, and 268 d are formed. The connector268 b connects the exposed second ohmic electrode 238 to the connectionpad 228 b. The connector 268 b connects the second ohmic electrode 238and the connection pad 228 b. Furthermore, the connector 268 b may beconnected to the first conductivity type semiconductor layer 233 a. Theconnector 268 b is electrically insulated from the first LED stack 223by the insulating layer 261.

The connector 268 c is connected to the exposed connection pad 228 cthrough the hole h2. The connector 268 c is electrically insulated fromboth the second LED stack 233 and the first LED stack 223 by theinsulating layer 261. The connector 268 c may have a pad region on thesecond LED stack 233.

The connector 268 d is connected to the second transparent electrode 235exposed through the hole h3 and the first reflective electrode 226, andelectrically connects the second transparent electrode 235 and the firstreflective electrode 226 to each other. The connector 268 d is insulatedfrom the first conductivity type semiconductor layer 233 a of the secondLED stack 233 and the first conductivity type semiconductor layer 223 aof the first LED stack 223. In another exemplary embodiment, theconnector 268 d may be connected to the second current spreading layer236. The connector 268 d may also include the pad region.

Referring to FIGS. 24A and 24B, the third LED stack 243 of FIGS. 18A and18B is bonded onto the second LED stack 233.

A bonding material layer may be formed on the second LED stack 233 onwhich the connectors 268 b, 268 c, and 268 d are formed, and anotherbonding material layer may be formed on the second color filter 247. Thesecond bonding layer 269 may be formed by bonding the bonding materiallayers to each other. Furthermore, the third substrate 241 may beremoved from the third LED stack 243 using a technology, such as a laserlift-off technology, a chemical lift-off technology, or others.Therefore, the first conductivity type semiconductor layer 243 a may beexposed, and a surface roughened by a surface texturing may be formed ona surface of the exposed first conductivity type semiconductor layer 243a.

The second bonding layer 269 may also be in contact with the uppersurface of the second LED stack 233, but may also be in contact with theinsulating layer 261 as illustrated in the drawing.

Referring to FIGS. 25A and 25B, holes penetrating through the third LEDstack 243 are formed to expose the connectors 268 c and 268 d. The holespenetrate through the second bonding layer 269. The upper surface of thethird ohmic electrode 248 is exposed by the hole exposing the connector268 c, and the upper surface of the third transparent electrode 245 ispartially exposed by the hole exposing the connector 268 d. Although theupper surface of the third transparent electrode 245 is described asbeing exposed by the hole exposing the connector 268 d, in someexemplary embodiments, the third transparent electrode 245 and thesecond color filter 247 may be removed and the upper surface of thethird current spreading layer 246 may also be exposed.

Referring to FIGS. 26A and 26B, the insulating layer 271 may be formedto cover the side walls of the holes. The insulating layer 271 may alsocover the upper surface of the third LED stack 243.

Next, the connectors 278 c and 278 d are formed. The connector 2278 cconnects the exposed third ohmic electrode 248 to the connector 268 c.The connector 2278 c connects the third ohmic electrode 248 and theconnector 268 c to each other. Furthermore, the connector 2278 c may beconnected to the first conductivity type semiconductor layer 243 a.

The connector 278 d may be connected to the third transparent electrode245 and the connector 268 d. Therefore, the second conductivity typesemiconductor layer 243 b of the third LED stack 243 is electricallyconnected to the common bump pad 251 d. The connector 278 d iselectrically insulated from the first conductivity type semiconductorlayer 243 a by the insulating layer 271. The connector 278 d may passthrough the hollow portion of the third current spreading layer 246. Inanother exemplary embodiment, the upper surface of the third currentspreading layer 246 may be exposed, and the connector 278 d may beconnected to the upper surface of the third current spreading layer 246.

Then, the light emitting device 200 is completed by dividing thesubstrate into light emitting device regions. As illustrated in FIG.26A, the bump pads 251 a, 251 b, 251 c, and 251 d may be disposed atfour corners of each light emitting device 200. In addition, the bumppads 251 a, 251 b, 251 c, and 251 d may have substantially a rectangularshape, but the inventive concepts are not limited thereto. In someexemplary embodiments, an insulating layer covering a side surface ofeach light emitting device may be additionally formed. The insulatinglayer may include a distributed Bragg reflector, a transparentinsulating film, or a reflective metal layer or an organic reflectivelayer of a multilayer structure formed thereon to reflect light, or mayinclude a light absorbing layer such as a black epoxy to block thelight. In this manner, light directed to the side surface from thefirst, second, and third LED stacks 223, 233, and 243 may be reflectedor absorbed to prevent light interference between the pixels. Inaddition, light efficiency may be improved by reflecting light directedto the side surface using the reflective layer, and alternatively, acontrast ratio of the display apparatus may be improved by blocking thelight using the light absorbing layer.

According to exemplary embodiments, a light emitting device includes thefirst, second, and third LED stacks 223, 233, and 243, in which anodesthereof are electrically connected in common, and cathodes thereof areindependently connected. However, the inventive concepts are not limitedthereto, and the anodes of the first, second, and third LED stacks 223,233, and 243 may be independently connected to the bump pads, and thecathodes thereof may be electrically connected in common.

The light emitting device 200 may include the first, second, and thirdLED stacks 223, 233, and 243 to emit red, green, and blue light, and maythus be used as a single pixel in a display apparatus. As described withreference to FIG. 14 , a display apparatus may be provided by arranginga plurality of light emitting devices 200 on the circuit board 201.Since the light emitting device 200 includes the first, second, andthird LED stacks 223, 233, and 243, an area of the subpixel in one pixelmay be increased. Further, the first, second, and third LED stacks 223,233, and 243 may be mounted by mounting one light emitting device 200,thereby reducing the number of mounting processes.

Meanwhile, as described with reference to FIG. 14 , the light emittingdevices 200 mounted on the circuit board 201 may be driven by a passivematrix method or an active matrix method.

FIGS. 27A and 27B are schematic plan view and cross-sectional view of alight emitting device 2000 according to another exemplary embodiment.

Referring to FIGS. 27A and 27B, the light emitting device 2000 accordingto an exemplary embodiment may include the bump pads 251 a, 251 b, 251c, and 251 d, the filler 253, the first LED stack 223, the second LEDstack 233, the third LED stack 243, insulating layers 225, 229, 2161,and 2171, the first reflective electrode 226, the second transparentelectrode 235, the third transparent electrode 245, the first ohmicelectrode 228 a, the connection pads 228 b and 228 c, the second currentspreading layer 236, the third current spreading layer 246, the firstcolor filter 237, the second color filter 247, a first bonding layer2139, a second bonding layer 2169, and connectors 2168 b, 2168 c, 2168d, 2178 c, and 2178 d.

The light emitting device 2000 according to the illustrated exemplaryembodiment is substantially similar to the light emitting device 200described above, except that the second ohmic electrode 238 and thethird ohmic electrode 248 are omitted. As such, detailed descriptions ofthe same or similar items to those of the light emitting device 200 willbe omitted to avoid redundancy.

The second LED stack 233 includes the first conductivity typesemiconductor layer 233 a, an active layer, and the second conductivitytype semiconductor layer 233 b. The second conductivity typesemiconductor layer 233 b may cover substantially the entire lowersurface of the first conductivity type semiconductor layer 233 a, andthus, the lower surface of the first conductivity type semiconductorlayer 233 a may not be exposed. The third LED stack 243 includes thefirst conductivity type semiconductor layer 243 a, an active layer, andthe second conductivity type semiconductor layer 243 b. The secondconductivity type semiconductor layer 243 b may cover substantially theentire lower surface of the first conductivity type semiconductor layer243 a, and thus, the lower surface of the first conductivity typesemiconductor layer 243 a may not be exposed. As such, the second ohmicelectrode 238 and the third ohmic electrode 248 of the light emittingdevice 200 are omitted in the light emitting device 2000.

The first color filter 237 may be patterned in advance, and the throughhole for connecting the connectors to each other may be easily formedlater. However, the inventive concepts are not limited thereto, and thethrough hole may penetrate through the first color filter 237.

The connector 2168 b may penetrate through the first and secondconductivity type semiconductor layers 233 a and 233 b of the second LEDstack 233 and the second transparent electrode 235 to be connected tothe connection pad 228 b. The connector 2168 b may be connected to theupper surface of the first conductivity type semiconductor layer 233 a.

The connector 2168 c is substantially similar to the connector 268 c ofFIG. 15B, but the first color filter 237 may be patterned in advance andthus, is not exposed to an inner wall of the hole where the connector2168 c is formed. However, the inventive concepts are not limitedthereto, and the connector 2168 c may be exposed to the inner wall ofthe hole.

The connector 2168 d is connected to the second current spreading layer236 and is connected to the first reflective electrode 226. Theconnector 2168 d may be spaced apart from the second transparentelectrode 235, and may be electrically connected to the secondtransparent electrode 235 through the second current spreading layer236. The connector 2168 d may include a pad region on the second LEDstack 233. The pad region may be disposed in the hole penetratingthrough the second LED stack 233.

The insulating layer 2161 insulates the connector 2168 b from the secondconductivity type semiconductor layer 233 b of the second LED stack 233and the second transparent electrode 235. The insulating layer 2161electrically insulates the connector 2168 c from the first and secondLED stacks 223 and 233, and also insulates the connector 2168 d from thefirst conductivity type semiconductor layer 223 a of the first LED stack223.

The first bonding layer 2139 may bond the first LED stack 223 and thefirst color filter 237 to each other, and may also be in contact with aportion of the second transparent electrode 235. In addition, the secondbonding layer 2169 may be in contact with the second color filter 247and the third transparent electrode 245.

The connector 2178 c is connected to the first conductivity typesemiconductor layer 243 a of the third LED stack 243, and also isconnected to the connector 2168 c. The connector 2178 c may be connectedto the upper surface of the first conductivity type semiconductor layer243 a. The connector 2178 c is insulated from the second conductivitytype semiconductor layer 243 b and the third transparent electrode 245by the insulating layer 2171.

The connector 2178 d connects the third current spreading layer 246 andthe connector 168 to each other. An upper surface of the connector 2178d may be positioned on the third LED stack 243. However, the position ofthe upper surface of the connector 2178 d is not necessarily limitedthereto, and the upper surface of the connector 2178 d may be positionedin the hole formed in the third LED stack 243.

The insulating layer 2171 may cover a side wall of the hole formed inthe third LED stack 243, and insulates the connector 2178 c from thesecond conductivity type semiconductor layer 243 b and the thirdtransparent electrode 245. In addition, the insulating layer 2171 mayinsulate the connector 2178 d from the first conductivity typesemiconductor layer 243 a.

FIGS. 28A, 28B, 29A, 29B, 30A, 30B, 31A, 31B, 32A, 32B, 33A, 33B, 34A,and 34B are plan views and cross-sectional views illustrating a methodof manufacturing a light emitting device 2000 according to an exemplaryembodiment.

Referring to FIGS. 28A and 28B, the second LED stack 233 is grown on thesecond substrate 231, and the second transparent electrode 235 is formedon the second LED stack 233. According to the illustrated exemplaryembodiment, the process of partially removing the second transparentelectrode 235 and the second conductivity type semiconductor layer 233 bdescribed with reference to FIGS. 17A and 17B is omitted.

The first color filter 237 is formed on the second transparent electrode235. Since the material forming the first color filter 237 issubstantially the same as that described with reference to FIGS. 15A and15B, detailed descriptions thereof will be omitted to avoid redundancy.Then, the first color filter 237 is patterned to expose the secondtransparent electrode 235. Regions exposing the second transparentelectrode 235 may include regions to which the extension 236 b is to beconnected, and may also include regions in which the through holes areto be formed.

Then, the second current spreading layer 236 is formed on the firstcolor filter 237. Since the second current spreading layer 236 issubstantially the same as that described with reference to FIGS. 17A and17B, detailed descriptions thereof will be omitted.

Referring to FIGS. 29A and 29B, the third LED stack 243 is grown on thethird substrate 241, and the third transparent electrode 245 is formedon the third LED stack 243. According to the illustrated exemplaryembodiment, the process of partially removing the third transparentelectrode 245 and the second conductivity type semiconductor layer 243 bdescribed with reference to FIGS. 18A and 18B is omitted.

The second color filter 247 is formed on the third transparent electrode245. Since the material forming the second color filter 247 issubstantially the same as that described with reference to FIGS. 15A and15B, detailed descriptions thereof will be omitted to avoid redundancy.

The second color filter 247 is patterned to expose the third transparentelectrode 245. Regions exposing the third transparent electrode 245 mayinclude regions to which the extension 246 b is to be connected, and mayalso include regions in which the through holes are to be formed.

Then, the third current spreading layer 246 is formed on the secondcolor filter 247. Since the third current spreading layer 246 issubstantially the same as that described with reference to FIGS. 18A and18B, detailed descriptions thereof will be omitted.

Referring to FIGS. 30A and 30B, the bump pads 251 a, 251 b, 251 c, and251 d are formed on the first LED stack 223, and the substrate 221 isremoved to expose the upper surface of the first LED stack 223. Thesurface roughened by the surface texturing may be formed on the exposedupper surface of the first LED stack 223.

Then, the second LED stack 233 of FIGS. 28A and 28B is bonded to thefirst LED stack 223 using the first bonding layer 2139, and the secondsubstrate 231 is removed.

Referring to FIGS. 31A and 31B, the holes h1, h2, and h3 penetratingthrough the second LED stack 233 and the first LED stack 223 are formed.The holes h1, h2, and h3 also penetrate through the first bonding layer2139.

The hole h1 exposes the second current spreading layer 236 and alsoexposes the first reflective layer 226. The second LED stack 233, thesecond transparent electrode 235, the first color filter 237, the firstLED stack 223, the insulating layer 225, and the like may be exposedonto a side wall of the hole h1.

The hole h2 exposes the connection pad 228 c. In addition, the secondLED stack 233, the second transparent electrode 235, the first LED stack223, and the insulating layer 225 may be exposed onto a side wall of thehole h2. The first color filter 237 may be spaced apart from the holeh2, but the inventive concepts are not limited thereto, and the firstcolor filter 237 may be exposed onto the side wall of the hole h2.

The hole h3 exposes the connection pad 228 b. In addition, the secondLED stack 233, the second transparent electrode 235, the first LED stack223, and the insulating layer 225 may be exposed onto a side wall of thehole. The first color filter 237 may be spaced apart from the hole h3,but the inventive concepts are not limited thereto, and the first colorfilter 237 may be exposed onto the side wall of the hole h3.

Referring to FIGS. 32A and 32B, the insulating layer 2161 covering theside walls of the holes h1, h2, and h3 is then formed. The insulatinglayer 2161 may also cover the upper surface of the second LED stack 233.

The insulating layer 2161 exposes the first reflective electrode 226 andthe connection pads 228 b and 228 c, and further exposes the secondcurrent spreading layer 236.

The connectors 2168 d, 2168 c, and 2168 b are formed in the holes h1,h2, and h3. The connector 2168 b is connected to the first conductivitytype semiconductor layer 233 a and is connected to the connection pad228 b. The connector 2168 c is insulated from the second LED stack 233and is connected to the connection pad 228 c. The connector 2168 d isconnected to the second current spreading layer 236 and is connected tothe first reflective electrode 226.

Then, referring to FIGS. 33A and 33B, the third LED stack 243 of FIGS.29A and 29B is bonded onto the second LED stack 233, and the thirdsubstrate 241 is removed. The third LED stack 243 may be bonded onto thesecond LED stack 233 through the second bonding layer 2169.

Referring to FIGS. 34A and 34B, holes penetrating through the third LEDstack 243 to expose the connectors 2168 c and 2168 d are formed, theinsulating layer 2171 covering the side walls of the holes are formed,and the connectors 2178 c and 2178 d are then formed.

The connector 2178 c may be connected to the upper surface of the secondconductivity type semiconductor layer 243 a, and may also be connectedto a pad region of the connector 2168 c. The pad region of the connector2168 c may be wider than a width of the hole penetrating through thethird LED stack 243. Meanwhile, the connector 2178 d is connected to theupper surface of the third current spreading layer 246 and is alsoconnected to the connector 2168 d.

Then, the light emitting device 2000 is completed by dividing thesubstrate into light emitting device regions. As illustrated in FIG.34A, the bump pads 251 a, 251 b, 251 c, and 251 d may be disposed atfour corners of each light emitting device 2000. In addition, the bumppads 251 a, 251 b, 251 c, and 251 d may have substantially a rectangularshape, but are not necessarily limited thereto. In some exemplaryembodiments, an insulating layer covering a side surface of each lightemitting device may be additionally formed, and the insulating layer mayinclude the reflective layer reflecting light or the absorbing layerabsorbing light as described above. Therefore, light directed to theside surface from the first, second, and third LED stacks 223, 233, and243 may be reflected or absorbed to block light interference between thepixels, and light efficiency of the light emitting device may beimproved or the contrast ratio of the display apparatus may be improved.

Meanwhile, the processes of forming the through holes and forming theconnectors are described as being performed whenever the second LEDstack 233 and the third LED stack 243 are bonded to each other. However,the processes for connecting the connectors may also be performed afterboth the second LED stack 233 and the third LED stack 243 are bonded. Inaddition, the connector is described as being formed using the throughhole, but the inventive concepts are not limited thereto. For example,the side surface of the light emitting device may be etched and theconnector may be formed along the side surface of the light emittingdevice.

FIGS. 35A and 35B are a plan view and a cross-sectional viewillustrating a light emitting diode stack structure according to anotherexemplary embodiment. A light emitting diode stack structure accordingto an exemplary embodiment includes the second LED stack 233 and thethird LED stack 243 that are bonded, which may be used to form a lightemitting device 2001 shown in FIGS. 36A and 36B.

Referring to FIGS. 35A and 35B, the light emitting diode stack structuremay include the bump pads 251 a, 251 b, 251 c, and 251 d, the filler253, the first LED stack 223, the second LED stack 233, the third LEDstack 243, the insulating layers 225 and 229, the first reflectiveelectrode 226, the second transparent electrode 235, the thirdtransparent electrode 245, the first ohmic electrode 228 a, the secondohmic electrode 238, the connection pads 228 b and 228 c, a secondcurrent spreading layer 2136, a third current spreading layer 2146, thefirst color filter 237, the second color filter 247, the first bondinglayer 239, and the second bonding layer 269. Although FIG. 35A showsonly one light emitting device region, a plurality of light emittingdevice regions may be continuously connected to each other.

The structure from the bump pads 251 a, 251 b, 251 c and 251 d and thefiller 253 to the second LED stack 233 is substantially the same as thestructure of FIGS. 21A and 21B, and thus, detailed descriptions thereofwill be omitted.

However, while the second current spreading layer 236 of FIGS. 21A and21B has the hollow portion in the pad region 236 a, the second currentspreading layer 2136 according to the illustrated exemplary embodimentmay obviate the need for the hollow portion.

In addition, the second ohmic electrode 238 is illustrated as beingformed on some regions of the first conductivity type semiconductorlayer 233 a, but in some exemplary embodiments, the bonding may also beperformed when the second ohmic electrode 238 is omitted, as describedwith reference to FIGS. 30A and 30B.

Meanwhile, referring back to FIGS. 21A to 22B, the second LED stack 233is bonded onto the first LED stack 223 and the through holes h1, h2, andh3 are then formed. However, the process of forming the through holes isomitted in the illustrated exemplary embodiment, and the third LED stack243 is bonded onto the second LED stack 233 using the second bondinglayer 269.

The third LED stack 243, the second color filter, and the third currentspreading layer 2146 according to the illustrated exemplary embodimentmay be manufactured by the method described with reference to the FIGS.29A and 29B, and after the third LED stack 243 is bonded, the thirdsubstrate 241 is removed. However, the third current spreading layer2146 may not require the hollow portion unlike the third currentspreading layer 246 shown in FIG. 24A.

In addition, the third LED stack 243 is illustrated as being bonded ontothe second LED stack 233 when the third ohmic electrode 248 is omittedon the first conductivity type semiconductor layer 243 a, but theinventive concepts are not limited thereto. For example, as describedwith reference to FIGS. 18A and 18B, a portion of the first conductivitytype semiconductor layer 243 a may be exposed, the third ohmic electrode248 may be formed on the exposed first conductivity type semiconductorlayer 243 a, and the third LED stack 243 may be bonded onto the secondLED stack 233 when the third ohmic electrode 248 is formed.

Therefore, the light emitting diode stack structure as shown in FIG. 35Bmay be provided to form the light emitting device 2001.

FIG. 36A is a plan view of the light emitting device 2001, and FIGS. 36Band 36C are schematic cross-sectional views taken along lines G-H andI-J of FIG. 36A, respectively.

Referring to FIGS. 36A, 36B, and 36C, since a stack structure of thelight emitting device 2001 is substantially the same as that describedwith reference to FIGS. 35A and 35B, detailed descriptions thereof areomitted, and hereinafter, an insulating layer 2261 and connectors 2278b, 2278 c, and 2278 d having a changed shape by patterning will bedescribed.

The third LED stack 243, the third transparent electrode 245, and thesecond color filter 247 are partially removed to expose the thirdcurrent spreading layer 2146, and the second LED stack 233, the secondtransparent electrode 235, and the first color filter 237 are removed toexpose the second ohmic electrode 238 and the second current spreadinglayer 2136.

Further, the first bonding layer 239, the first LED stack 223, and theinsulating layer 225 are partially removed to expose the connection pads228 b and 228 c and the first reflective electrode 226.

In addition, the patterning may also be performed for a dicing regionfor separating the light emitting devices by exposing an upper surfaceof the insulating layer 229 or the filler 253.

The insulating layer 2261 covers side surfaces of the first, second, andthird LED stacks 223, 233, and 243 and other layers. The insulatinglayer 2261 has openings that expose the third current spreading layer2146, the second ohmic electrode 238, the second current spreading layer2136, the first reflective electrode 226, and the connection pads 228 band 228 c. The insulating layer 2261 may be formed of a single layer ormultiple layers of a light-transmissive material, such as SiO₂, Si₃N₄,or others. The insulating layer 2261 may also cover substantially theentire upper surface of the third LED stack 243. In addition, theinsulating layer 2261 may include a distributed Bragg reflector thatreflects light emitted from the first LED stack 223, the second LEDstack 233, and the third LED stack 243, thereby preventing light frombeing emitted to the side surface of the light emitting device 2001.Alternatively, the insulating layer 2261 may include a transparentinsulating film and a reflective metal layer, or an organic reflectivelayer of a multilayer structure formed thereon to thereby reflect light,or may include a light absorbing layer such as a black epoxy to blocklight. The insulating layer 2261 may include the reflective layer or theabsorbing layer, thereby making it possible to prevent lightinterference between pixels and to improve a contrast ratio of thedisplay apparatus. When the insulating layer 2261 includes thereflective layer or the absorbing layer, the insulating layer 2261 hasan opening that exposes the upper surface of the third LED stack 243.

The connectors 2278 b, 2278 c, and 2278 d are disposed on the insulatinglayer 2261 along the side surface of the light emitting device 2001. Asillustrated in FIG. 36B, the connector 2278 c connects the firstconductivity type semiconductor layer 243 a of the third LED stack 243to the connection pad 228 c. Therefore, the first conductivity typesemiconductor layer 243 a of the third LED stack 243 is electricallyconnected to the third bump pad 251 c. The connector 2278 c may directlyconnect the third LED stack 243 to the connection pad 228 c. In thiscase, the connector 2278 c may include an extension on the second LEDstack 233 for current distribution. In some exemplary embodiments, whenthe third ohmic electrode 248 is formed, the connector 2278 c may beconnected to the third ohmic electrode 248. In this case, the thirdohmic electrode 248 may include an extension together with a pad region.

Referring to FIG. 36C, the connector 2278 b connects the second ohmicelectrode 238 to the connection pad 228 b. Therefore, the firstconductivity type semiconductor layer 233 a of the second LED stack 233is electrically connected to the second bump pad 251 b. When the secondohmic electrode 238 is omitted in some exemplary embodiments, theconnector 2278 b may be connected to the first conductivity typesemiconductor layer 233 a. The connector 2278 c is connected to thethird current spreading layer 2146, the second current spreading layer2136, and the first reflective electrode 226. Therefore, the secondconductivity type semiconductor layer 243 b of the third LED stack 243,the second conductivity type semiconductor layer 233 a of the second LEDstack 233, and the second conductivity type semiconductor layer 223 b ofthe first LED stack 223 are electrically connected in common to thecommon bump pad 251 d.

In the illustrated exemplary embodiment, one connector 278 d isdescribed as connecting the third current spreading layer 2146, thesecond current spreading layer 2136, and the first reflective electrode226 to each other, however, the inventive concepts are not limitedthereto, and a plurality of connectors may be used. For example, thethird current spreading layer 2146 and the second current spreadinglayer 2136 may be connected to each other by one connector, and thesecond current spreading layer 2136 and the first reflective electrode226 may also be connected to each other by another connector.

The light emitting device 2001 may be manufactured by patterning thelight emitting diode stack structure described with reference to FIGS.35A and 35B and dividing it into a separate unit.

More particularly, the third LED stack 243, the third transparentelectrode 245, and the second color filter 247 are patterned and arepartially removed. The third LED stack 243, the third transparentelectrode 245, and the second color filter 247 are removed to expose thethird current spreading layer 2146, as illustrated in FIG. 36C. Thethird LED stack 243, the third transparent electrode 245, and the secondcolor filter 247 are removed from the dicing region for separatelydividing the light emitting devices, and a periphery of upper regions ofthe connection pads 228 b and 228 c and a portion of an upper region ofthe first reflective electrode 226 are also removed. Meanwhile, when thethird ohmic electrode 248 is formed on the third LED stack 243, thethird ohmic electrode 248 is also exposed.

Then, the second bonding layer 269 and the second LED stack 233 arepatterned to expose the second ohmic electrode 238. In addition, thesecond transparent electrode 235 and the first color filter 237 areremoved to expose the second current spreading layer 2136. The secondbonding layer 269, the second LED stack 233, the second transparentelectrode 235, and the first color filter 237 are removed from thedicing region for separately dividing the light emitting devices.

Then, the first bonding layer 239, the first LED stack 223, and theinsulating layer 225 are patterned to expose the connection pads 228 band 228 c and the first reflective electrode 226. The first bondinglayer 239, the first LED stack 223, and the insulating layer 225 areremoved from the dicing region for separately dividing the lightemitting devices.

Then, the insulating layer 2261 that covers the exposed side surfaces ofthe light emitting devices is formed. The insulating layer 2261 ispatterned using photolithography and etching processes or the like, andtherefore, the openings that expose the second and third currentspreading layers 236 and 246, the second ohmic electrode 238, theconnection pads 228 b and 228 c, and the first reflective electrode 226are formed.

Then, the connectors 2278 b, 2278 c, and 2278 d are formed toelectrically connect the second and third current spreading layers 236and 246, the second ohmic electrode 238, the connection pads 228 b and228 c, and the first reflective electrode 226, which are exposed.

FIG. 37 is a schematic plan view of a display apparatus according to anexemplary embodiment.

Referring to FIG. 37 , the display apparatus according to an exemplaryembodiment includes a circuit board 301 and a plurality of lightemitting devices 300.

The circuit board 301 may include a circuit for passive matrix drivingor active matrix driving. In one exemplary embodiment, the circuit board301 may include interconnection lines and resistors. In anotherexemplary embodiment, the circuit board 301 may include interconnectionlines, transistors and capacitors. The circuit board 301 may also haveelectrode pads disposed on an upper surface thereof to allow electricalconnection to the circuit therein.

The light emitting devices 300 are arranged on the circuit board 301.Each of the light emitting devices 300 may constitute one pixel. Thelight emitting device 300 includes electrode pads 373 a, 373 b, 373 c,373 d, which are electrically connected to the circuit board 301. Inaddition, the light emitting device 300 may include a substrate 341 atan upper surface thereof. Since the light emitting devices 300 areseparated from one another, the substrates 341 disposed at the uppersurfaces of the light emitting devices 300 are also separated from oneanother.

Details of the light emitting device 300 will be described withreference to FIG. 38A and FIG. 38B. FIG. 38A is a schematic plan view ofthe light emitting device 300 for a display according to an exemplaryembodiment, and FIG. 38B is a schematic cross-sectional view taken alongline A-A of FIG. 38A. Although the electrode pads 373 a, 373 b, 373 c,373 d are illustrated and described as being disposed at an upper sideof the light emitting device 300, the light emitting device 300 may beflip-bonded on the circuit board 301 of FIG. 37 , and the electrode pads373 a, 373 b, 373 c, 373 d may be disposed at a lower side.

Referring to FIG. 38A and FIG. 38B, the light emitting device 300 mayinclude a first substrate 321, a second substrate 341, a distributedBragg reflector 322, a first LED stack 323, a second LED stack 333, athird LED stack 343, a first transparent electrode 325, a secondtransparent electrode 335, a third transparent electrode 345, an ohmicelectrode 346, a first current spreader 328, a second current spreader338, a third current spreader 348, a first color filter 347, a secondcolor filter 357, a first bonding layer 349, a second bonding layer 359,a lower insulation layer 361, an upper insulation layer 371, an ohmicelectrode 363 a, through-hole vias 363 b, 365 a, 365 b, 367 a, 367 b,and electrode pads 373 a, 373 b, 373 c, 373 d.

The first substrate 321 may support the LED stacks 323, 333, 343. Thefirst substrate 321 may be a growth substrate for the first LED stack323, for example, a GaAs substrate. In particular, the first substrate321 may have conductivity.

The second substrate 341 may support the LED stacks 323, 333, 343. TheLED stacks 323, 333, 343 are disposed between the first substrate 321and the second substrate 341.

The second substrate 341 may be a growth substrate for the third LEDstack 343. For example, the second substrate 341 may be a sapphiresubstrate or a GaN substrate, more particularly, a patterned sapphiresubstrate. The first to third LED stacks are disposed on the secondsubstrate 341 in the order of the third LED stack 343, the second LEDstack 333, and the first LED stack 323 from the second substrate 341. Inan exemplary embodiment, a single third LED stack 343 may be disposed onsingle second substrate 341. The second LED stack 333, the first LEDstack 323, and the first substrate 321 are disposed on the third LEDstack 343. Accordingly, the light emitting device 300 may have a singlechip structure of a single pixel.

In another exemplary embodiment, a plurality of third LED stacks 343 maybe disposed on a single second substrate 341. The second LED stack 333,the first LED stack 323, and the first substrate 321 are disposed oneach of the third LED stacks 343, whereby the light emitting device 300has a single chip structure of a plurality of pixels.

In some exemplary embodiments, the second substrate 341 may be omittedand a lower surface of the third LED stack 343 may be exposed. In thiscase, a roughened surface may be formed on the lower surface of thethird LED stack 343 by surface texturing.

Each of the first LED stack 323, the second LED stack 333, and the thirdLED stack 343 includes a first conductivity type semiconductor layer 323a, 333 a, and 343 a, a second conductivity type semiconductor layer 323b, 333 b, and 343 b, and an active layer interposed therebetween,respectively. The active layer may have a multi-quantum well structure.

The LED stacks emitting light having a shorter wavelength may bedisposed closer to the second substrate 341. For example, the first LEDstack 323 may be an inorganic light emitting diode adapted to emit redlight, the second LED stack 333 may be an inorganic light emitting diodeadapted to emit green light, and the third LED stack 343 may be aninorganic light emitting diode adapted to emit blue light. The first LEDstack 323 may include an AlGaInP-based well layer, the second LED stack333 may include an AlGaInP or AlGaInN-based well layer, and the thirdLED stack 343 may include an AlGaInN-based well layer. However, theinventive concepts are not limited thereto. When the light emittingdevice 300 includes a micro LED, which has a surface area less thanabout 10,000 square μm as known in the art, or less than about 4,000square μm or 2,500 square μm in other exemplary embodiments, the firstLED stack 323 may emit any one of red, green, and blue light, and thesecond and third LED stacks 333 and 343 may emit a different one of red,green, and blue light, without adversely affecting operation, due to thesmall form factor of a micro LED.

In addition, the first conductivity type semiconductor layer 323 a, 333a, and 343 a of each of the LED stacks 323, 333, 343 may be an n-typesemiconductor layer, and the second conductivity type semiconductorlayer 323 b, 333 b, and 343 b thereof may be a p-type semiconductorlayer. According to the illustrated exemplary embodiment, an uppersurface of the first LED stack 323 is an n-type semiconductor layer 323a, an upper surface of the second LED stack 333 is an n-typesemiconductor layer 333 a, and an upper surface of the third LED stack343 is a p-type semiconductor layer 343 b. In particular, only thesemiconductor layers of the third LED stack 343 are stacked in adifferent sequence from those of the first and second LED stacks 323 and333. The first conductivity type semiconductor layer 343 a of the thirdLED stack 343 may be subjected to surface texturing in order to improvelight extraction efficiency. In some exemplary embodiments, the firstconductivity type semiconductor layer 333 a of the second LED stack 333may also be subjected to surface texturing.

The first LED stack 323, the second LED stack 333, and the third LEDstack 343 may be stacked to overlap one another, and may havesubstantially the same luminous area. Further, in each of the LED stacks323, 333, 343, the first conductivity type semiconductor layer 323 a,333 a, and 343 a may have substantially the same area as the secondconductivity type semiconductor layer 323 b, 333 b, and343 b. Inparticular, in each of the first LED stack 323 and the second LED stack333, the first conductivity type semiconductor layer 323 a and 333 a maycompletely overlap the second conductivity type semiconductor layer 323b and 333 b, respectively. In the third LED stack 343, a hole h5 (seeFIG. 45A) is formed on the second conductivity type semiconductor layer343 b to expose the first conductivity type semiconductor layer 343 a,and thus, the first conductivity type semiconductor layer 343 a has aslightly larger area than the second conductivity type semiconductorlayer 343 b.

The first LED stack 323 is disposed apart from the second substrate 341,the second LED stack 333 is disposed under the first LED stack 323, andthe third LED stack 343 is disposed under the second LED stack 333.Since the first LED stack 323 emits light having a longer wavelengththan the second and third LED stacks 333 and 343, light generated fromthe first LED stack 323 may be emitted outside after passing through thesecond and third LED stacks 333 and 343 and the second substrate 341. Inaddition, since the second LED stack 333 emits light having a longerwavelength than the third LED stack 343, light generated from the secondLED stack 333 may be emitted outside after passing through the third LEDstack 343 and the second substrate 341.

The distributed Bragg reflector 322 may be disposed between the firstsubstrate 321 and the first LED stack 323. The distributed Braggreflector 322 reflects light generated from the first LED stack 323 toprevent the light from being lost through absorption by the firstsubstrate 321. For example, the distributed Bragg reflector 322 may beformed by alternately stacking AlAs and AlGaAs-based semiconductorlayers one above another.

The first transparent electrode 325 may be disposed between the firstLED stack 323 and the second LED stack 333. The first transparentelectrode 325 is in ohmic contact with the second conductivity typesemiconductor layer 323 b of the first LED stack 323 and transmits lightgenerated from the first LED stack 323. The first transparent electrode325 may include a metal layer or a transparent oxide layer, such as anindium tin oxide (ITO) layer or others.

The second transparent electrode 335 is in ohmic contact with the secondconductivity type semiconductor layer 333 b of the second LED stack 333.As shown in the drawings, the second transparent electrode 335 contactsa lower surface of the second LED stack 333 between the second LED stack333 and the third LED stack 343. The second transparent electrode 335may include a metal layer or a conductive oxide layer transparent withrespect to red light and green light.

The third transparent electrode 345 is in ohmic contact with the secondconductivity type semiconductor layer 343 b of the third LED stack 343.The third transparent electrode 345 may be disposed between the secondLED stack 333 and the third LED stack 343, and contacts the uppersurface of the third LED stack 343. The third transparent electrode 345may include a metal layer or a conductive oxide layer transparent withrespect to red light and green light. The third transparent electrode345 may also be transparent to blue light. Each of the secondtransparent electrode 335 and the third transparent electrode 345 is inohmic contact with the p-type semiconductor layer of each of the LEDstacks to assist in current spreading. Examples of conductive oxidelayers for the second and third transparent electrodes 335 and 345 mayinclude SnO₂, InO₂, ITO, ZnO, IZO, or others.

The first to third current spreaders 328, 338, and 348 may be disposedto spread current in the second conductivity type semiconductor layers323 b, 333 b, and 343 b of the first to third LED stacks 323, 333, and343. As shown in the drawing, the first current spreader 328 may bedisposed on the second conductivity type semiconductor layer 323 bexposed through the first transparent electrode 325, the second currentspreader 338 may be disposed on the second conductivity typesemiconductor layer 333 b exposed through the second transparentelectrode 335, and the third current spreader 348 may be disposed on thesecond conductivity type semiconductor layer 343 b exposed through thethird transparent electrode 345. As shown in FIG. 38A, each of the firstto third current spreaders 328, 338, and 348 may be disposed along anedge of each of the first to third LED stacks 323, 333, and 343. Also,each of the first to third current spreaders 328, 338 and 348 may havesubstantially a ring shape to surround a center of each LED stack, butthe inventive concepts are not limited thereto, and may havesubstantially a straight or a curved shape. Further, the first to thirdcurrent spreaders 328, 338, and 348 may be disposed to overlap oneanother, without being limited thereto.

The first to third current spreader 328, 338, and 348 may be separatedfrom the first to third transparent electrode 325, 335, and 345.Accordingly, a gap may be formed between a side surface of the first tothird current spreader 328, 338, and 348 and the first to thirdtransparent electrode 325, 335, and 345. However, the inventive conceptsare not limited thereto, and at least one of the first to third currentspreader 328, 338, and 348 may contact the first to third transparentelectrode 325, 335, and 345.

The first to third current spreader 328, 338, and 348 may include amaterial having a higher electrical conductivity than the first to thirdtransparent electrode 325, 335, and 345. In this manner, current may beevenly spread over wide regions of the second conductivity typesemiconductor layers 323 b, 333 b, and 343 b.

The ohmic electrode 346 is in ohmic contact with the first conductivitytype semiconductor layer 343 a of the third LED stack 343. The ohmicelectrode 346 may be disposed on the first conductivity typesemiconductor layer 343 a exposed through the third transparentelectrode 345 and the second conductivity type semiconductor layer 343b. The ohmic electrode 346 may be formed of Ni/Au/Ti or Ni/Au/Ti/Ni, forexample. When a surface of the ohmic electrode 346 is exposed during theetching process, a Ni layer may be formed on the surface of the ohmicelectrode 346 and function as an etching stopper layer. The ohmicelectrode 346 may be formed to have various shapes. In an exemplaryembodiment, the ohmic electrode 346 may have substantially an elongatedshape to function as a current spreader. In some exemplary embodiments,the ohmic electrode 346 may be omitted.

The first color filter 347 may be disposed between the third transparentelectrode 345 and the second LED stack 333, and the second color filter357 may be disposed between the second LED stack 333 and the first LEDstack 323. The first color filter 347 transmits light generated from thefirst and second LED stacks 323 and 333 while reflecting light generatedfrom the third LED stack 343. The second color filter 357 transmitslight generated from the first LED stack 323 while reflecting lightgenerated from the second LED stack 333. Accordingly, light generatedfrom the first LED stack 323 may be emitted outside through the secondLED stack 333 and the third LED stack 343, and light generated from thesecond LED stack 333 may be emitted outside through the third LED stack343. Furthermore, it is possible to prevent light loss by preventinglight generated from the second LED stack 333 from entering the firstLED stack 323, or light generated from the third LED stack 343 fromentering the second LED stack 333.

In some exemplary embodiments, the second color filter 357 may reflectlight generated from the third LED stack 343.

The first and second color filters 347, 357 may be, for example, a lowpass filter allowing light in a low frequency band, e.g., a longwavelength band to pass therethrough, a band pass filter allowing lightin a predetermined wavelength band, or a band stop filter that preventslight in a predetermined wavelength band from passing therethrough. Inparticular, each of the first and second color filters 347 and 357 maybe formed by alternately stacking insulation layers having differentrefractive indices one above another, such as TiO₂ and SiO₂, forexample. In particular, each of the first and second color filters 347and 357 may include a distributed Bragg reflector (DBR). In addition, astop band of the distributed Bragg reflector can be controlled byadjusting the thicknesses of TiO₂ and SiO₂ layers. The low pass filterand the band pass filter may also be formed by alternately stackinginsulation layers having different refractive indices one above another.

The first bonding layer 349 couples the second LED stack 333 to thethird LED stack 343. The first bonding layer 349 may couple the firstcolor filter 347 to the second transparent electrode 335 between thefirst color filter 347 and the second transparent electrode 335. Forexample, the first bonding layer 349 may be formed of a transparentorganic material or a transparent inorganic material. Examples of theorganic material may include SUB, poly(methyl methacrylate) (PMMA),polyimide, Parylene, benzocyclobutene (BCB), or others, and examples ofthe inorganic material may include Al₂O₃, SiO₂, SiN_(x), or others. Moreparticularly, the first bonding layer 349 may be formed of spin-on-glass(SOG).

The second bonding layer 359 couples the second LED stack 333 to thefirst LED stack 323. As shown in the drawings, the second bonding layer359 may be disposed between the second color filter 357 and the firsttransparent electrode 325. The second bonding layer 359 may be formed ofsubstantially the same material as the first bonding layer 349.

Holes h1, h2, h3, h4, h5 are formed through the first substrate 321. Thehole h1 may be formed through the first substrate 321, the distributedBragg reflector 322, and the first LED stack 323 to expose the firsttransparent electrode 325. The hole h2 may be formed through the firstsubstrate 321, the distributed Bragg reflector 322, the firsttransparent electrode 325, the second bonding layer 359, and the secondcolor filter 357 to expose the first conductivity type semiconductorlayer 333 a of the second LED stack 333.

The hole h3 may be formed through the first substrate 321, thedistributed Bragg reflector 322, the first transparent electrode 325,the second bonding layer 359, and the second color filter 357, and thesecond LED stack 333 to expose the second transparent electrode 335. Thehole h4 may be formed through the first substrate 321, the distributedBragg reflector 322, the first transparent electrode 325, the secondbonding layer 359, the second color filter 357, the second LED stack333, the second transparent electrode 335, the first bonding layer 349,and the first color filter 347 to expose the third transparent electrode345. The hole h5 may be formed through the first substrate 321, thedistributed Bragg reflector 322, the first transparent electrode 325,the second bonding layer 359, the second color filter 357, the secondLED stack 333, the second transparent electrode 335, the first bondinglayer 349, and the first color filter 347 to expose the ohmic electrode346. When the ohmic electrode 346 is omitted in some exemplaryembodiments, the first conductivity type semiconductor layer 343 a maybe exposed by the hole h5.

Although the holes h1, h3 and h4 are illustrated as being separated fromone another to expose the first to third transparent electrodes 325,335, and 345, respectively, the inventive concepts are not limitedthereto, and the first to third transparent electrodes 325, 335, and 345may be exposed though a single hole.

In addition, although the first to third transparent electrodes 325,335, and 345 are illustrated as being exposed though the holes h1, h3and h4, in some exemplary embodiments, the first to third currentspreaders 328, 338, and 348 may be exposed.

The lower insulation layer 361 covers side surfaces of the firstsubstrate 321 and the first to third LED stacks 323, 333, 343, whilecovering an upper surface of the first substrate 321. The lowerinsulation layer 361 also covers side surfaces of the holes h1, h2, h3,h4, h5. However, the lower insulation layer 361 may be subjected topatterning to expose a bottom of each of the holes h1, h2, h3, h4, h5.Furthermore, the lower insulation layer 361 may also be subjected topatterning to expose the upper surface of the first substrate 321.

The ohmic electrode 363 a is in ohmic contact with the upper surface ofthe first substrate 321. The ohmic electrode 363 a may be formed in anexposed region of the first substrate 321, which is exposed bypatterning the lower insulation layer 361. The ohmic electrode 363 a maybe formed of Au—Te alloys or Au—Ge alloys, for example. Each of thethrough-hole vias 363 b, 365 b, and 367 b may be connected to the firstto third transparent electrodes 325, 335, and 345, and may be connectedto the first to third current spreaders 328, 338, and 348, respectively.

The through-hole vias 363 b, 365 a, 365 b, 367 a, 367 b are disposed inthe holes h1, h2, h3, h4, h5. The through-hole via 363 b may be disposedin the hole h1, and may be connected to the first transparent electrode325. The through-hole via 365 a may be disposed in the hole h2, and bein ohmic contact with the first conductivity type semiconductor layer333 a. The through-hole via 365 b may be disposed in the hole h3, andmay be electrically connected to the second transparent electrode 335.The through-hole via 367 a may be disposed in the hole h5, and may beelectrically connected to the first conductivity type semiconductorlayer 343 a. For example, the through-hole via 367 a may be electricallyconnected to the ohmic electrode 345 through the hole h5. Thethrough-hole via 367 b may be disposed in the hole h4, and may beconnected to the third transparent electrode 345. The through-hole via363 b, 365 b, and 367 b may be connected to the first to thirdtransparent electrode 325, 335, and 345, or may be connected to thefirst to third current spreader 328, 338, and 348, respectively.

The upper insulation layer 371 covers the lower insulation layer 361 andthe ohmic electrode 363 a. The upper insulation layer 371 may cover thelower insulation layer 361 at the sides of the first substrate 321, andthe first to third LED stacks 323, 333 and 343. A top surface of thelower insulation layer 361 may be covered by the upper insulation layer371. The upper insulation layer 371 may have an opening 371 a forexposing the ohmic electrode 363 a, and may have openings for exposingthe through-hole vias 363 b, 365 a, 365 b, 367 a, and 367 b.

The lower insulation layer 361 or the upper insulation layer 371 may beformed of silicon oxide or silicon nitride, but it is not limitedthereto. For example, the lower insulation layer 361 or the upperinsulation layer 371 may be a distributed Bragg reflector formed bystacking insulation layers having different refractive indices. Inparticular, the upper insulation layer 371 may be a light reflectivelayer or a light blocking layer.

The electrode pads 373 a, 373 b, 373 c, 373 d are disposed on the upperinsulation layer 371, and are electrically connected to the first tothird LED stacks 323, 333, 343. For example, the first electrode pad 373a is electrically connected to the ohmic electrode 363 a exposed throughthe opening 371 a of the upper insulation layer 371, and the secondelectrode pad 373 b is electrically connected to the through-hole via365 a exposed through the opening of the upper insulation layer 371. Inaddition, the third electrode pad 373 c is electrically connected to thethrough-hole via 367 a exposed through the opening of the upperinsulation layer 371. A common electrode pad 373 d is commonlyelectrically connected to the through-hole vias 363 b, 365 b, and 367 b.

Accordingly, the common electrode pad 373 d is commonly electricallyconnected to the second conductivity type semiconductor layers 323 b,333 b, 343 b of the first to third LED stacks 323, 333, 343, and each ofthe electrode pads 373 a, 373 b, 373 c is electrically connected to thefirst conductivity type semiconductor layers 323 a, 333 a, 343 a of thefirst to third LED stacks 323, 333, 343, respectively.

According to the illustrated exemplary embodiment, the first LED stack323 is electrically connected to the electrode pads 373 d and 373 a, thesecond LED stack 333 is electrically connected to the electrode pads 373d and 373 b, and the third LED stack 343 is electrically connected tothe electrode pads 373 d and 373 c. Therefore, anodes of the first LEDstack 323, the second LED stack 333, and the third LED stack 343 arecommonly electrically connected to the electrode pad 373 d, and thecathodes thereof are electrically connected to the first to thirdelectrode pads 373 a, 373 b, and 373 c, respectively. Accordingly, thefirst to third LED stacks 323, 333, 343 may be independently driven.

FIGS. 39A, 39B, 40A, 40B, 41A, 41B, 42, 43, 44, 45A, 45B, 46A, 46B, 47A,47B, 48A, 48B, 49A, and 49B are schematic plan views and cross-sectionalviews illustrating a method of manufacturing a light emitting device fora display according to an exemplary embodiment. In the drawings, eachplan view corresponds to FIG. 38A, and each cross-sectional view istaken along line A-A of the corresponding plan view. FIGS. 39B and 40Bare cross-sectional views taken along line B-B of FIGS. 39A and 40A,respectively.

Referring to FIGS. 39A and 39B, a first LED stack 323 is grown on afirst substrate 321. The first substrate 321 may be a GaAs substrate,for example. The first LED stack 323 may include AlGaInP-basedsemiconductor layers, and includes a first conductivity typesemiconductor layer 323 a, an active layer, and a second conductivitytype semiconductor layer 323 b. The first conductivity type may be ann-type, and the second conductivity type may be a p-type. A distributedBragg reflector 322 may be formed prior to the growth of the first LEDstack 323. The distributed Bragg reflector 322 may have a stackstructure formed by repeatedly stacking AlAs/AlGaAs layers, for example.

A first transparent electrode 325 may be formed on the secondconductivity type semiconductor layer 323 b. The first transparentelectrode 325 may be formed of a transparent oxide layer, such as indiumtin oxide (ITO), a transparent metal layer, or others.

The first transparent electrode 325 may be formed to have an opening forexposing the second conductivity type semiconductor layer 323 b, and afirst current spreader 328 may be formed in the opening. The firsttransparent electrode 325 may be patterned by photolithography andetching techniques, for example, which may form the opening for exposingthe second conductivity type semiconductor layer 323 b. The opening ofthe first transparent electrode 325 may define a region to which thefirst current spreader 328 may be formed.

Although FIG. 39A shows the first current spreader 328 as havingsubstantially a rectangular shape, the inventive concepts are notlimited thereto. For example, the first current spreader 328 may havevarious shapes, such as an elongated line or a curved line shape. Thefirst current spreader 328 may be formed by the lift-off technique orthe like, and a side thereof may be separated from the first transparentelectrode 325. The first current spreader 328 may be formed to have thesame or similar thickness as the first transparent electrode 325.

Referring to FIGS. 40A and 40B, a second LED stack 333 is grown on asecond substrate 331, and a second transparent electrode 335 is formedon the second LED stack 333.

The second LED stack 333 may include AlGaInP-based or AlGaInN-basedsemiconductor layers, and may include a first conductivity typesemiconductor layer 333 a, an active layer, and a second conductivitytype semiconductor layer 333 b. The second substrate 331 may be asubstrate capable of growing AlGaInP-based semiconductor layers thereon,for example, a GaAs substrate or a GaP, or a substrate capable ofgrowing AlGaInN-based semiconductor layers thereon, for example, asapphire substrate. The first conductivity type may be an n-type, andthe second conductivity type may be a p-type. A composition ratio of Al,Ga, and In for the second LED stack 333 may be determined so that thesecond LED stack 333 may emit green light, for example. In addition,when the GaP substrate is used, a pure GaP layer or a nitrogen (N) dopedGaP layer is formed on the GaP to realize green light. The secondtransparent electrode 335 may be in ohmic contact with the secondconductivity type semiconductor layer 333 b. The second transparentelectrode 335 may be formed of a metal layer or a conductive oxidelayer, such as SnO₂, InO₂, ITO, ZnO, IZO, and the like.

The second transparent electrode 335 may be formed to have an openingfor exposing the second conductivity type semiconductor layer 333 b, anda second current spreader 338 may be formed in the opening. The secondtransparent electrode 335 may be patterned by photolithography andetching techniques, for example, which may form the opening for exposingthe second conductivity type semiconductor layer 333 b. The opening ofthe second transparent electrode 335 may define a region for the secondcurrent spreader 338 to be formed.

Although FIG. 40A shows the second current spreader 338 as having asubstantially rectangular shape, the inventive concepts are not limitedthereto. For example, the second current spreader 338 may have variousshapes, such as substantially an elongated or a curved line shape. Thesecond current spreader 338 may be formed by the lift-off technique orthe like, and a side thereof may be separated from the secondtransparent electrode 335. The second current spreader 338 may be formedto have the same or similar thickness as the second transparentelectrode 335.

The second current spreader 338 may have the same shape and the samesize as the first current spreader 328, without being limited thereto.

Referring to FIGS. 41A and 41B, a third LED stack 343 is grown on asecond substrate 341, and a third transparent electrode 345 is formed onthe third LED stack 343. The third LED stack 343 may includeAlGaInN-based semiconductor layers, and may include a first conductivitytype semiconductor layer 343 a, an active layer , and a secondconductivity type semiconductor layer 343 b. The first conductivity typemay be an n-type, and the second conductivity type may be a p-type.

The second substrate 341 is a substrate capable of growing GaN-basedsemiconductor layers thereon, and may be different from the firstsubstrate 321. A composition ratio of AlGaInN for the third LED stack343 is determined to allow the third LED stack 343 to emit blue light,for example. The third transparent electrode 345 is in ohmic contactwith the second conductivity type semiconductor layer 343 b. The thirdtransparent electrode 345 may be formed of a conductive oxide layer,such as SnO₂, InO₂, ITO, ZnO, IZO, and the like.

The third transparent electrode 345 may be formed to have an opening forexposing the first conductivity type semiconductor layer 343 a, and anopening for exposing the second conductivity type semiconductor layer343 b. The opening for exposing the first conductivity typesemiconductor layer 343 a may define a region to which an ohmicelectrode 346 may be formed, and the opening for exposing the secondconductivity type semiconductor layer 343 b may define a region to whicha third current spreader 348 may be formed.

The third transparent electrode 345 may be patterned by photolithographyand etching techniques, for example, which may form the openings forexposing the second conductivity type semiconductor layer 343 b.Subsequently, the first conductivity type semiconductor layer 343 a maybe exposed by partially etching the second conductivity typesemiconductor layer 343 b, and the ohmic electrode 346 may be formed inan exposed region of the first conductivity type semiconductor layer 343a. The ohmic electrode 346 may be formed of a metal layer and in ohmiccontact with the first conductivity type semiconductor layer 343 a. Forexample, the ohmic electrode 346 may be formed of a multilayer structureof Ni/Au/Ti or Ni/Au/Ti/Ni. The ohmic electrode 346 is electricallyseparated from the third transparent electrode 345 and the secondconductivity type semiconductor layer 343 b.

The third current spreader 348 is formed in an exposed region of thesecond conductivity type semiconductor layer 343 b. Although FIG. 41Ashows the third current spreader 348 as having substantially arectangular shape, the inventive concepts are not limited thereto. Forexample, the third current spreader 348 may have various shapes, such assubstantially an elongated or a curved line shape. The third currentspreader 348 may be formed by the lift-off technique or the like, and aside thereof may be separated from the third transparent electrode 345.The third current spreader 348 may be formed to have the same or similarthickness as the third transparent electrode 345.

The third current spreader 348 may have substantially the same shape andthe same size as the first or second current spreader 328 or 338,without being limited thereto.

Then, a first color filter 347 is formed on the second transparentelectrode 345. Since the first color filter 347 is substantially thesame as that described with reference to FIG. 38A and FIG. 38B, detaileddescriptions thereof will be omitted to avoid redundancy.

Referring to FIG. 42 , the second LED stack 333 of FIG. 40A and FIG. 40Bis bonded on the third LED stack 343 of FIG. 41A and FIG. 41B, and thesecond substrate 331 is removed therefrom.

The first color filter 347 is bonded to the second transparent electrode335 to face each other. For example, bonding material layers may beformed on the first color filter 347 and the second transparentelectrode 335, and are bonded to each other to form a first bondinglayer 349. The bonding material layers may be transparent organicmaterial layers or transparent inorganic material layers. Examples ofthe organic material may include SU8, poly(methyl methacrylate) (PMMA),polyimide, Parylene, benzocyclobutene (BCB), or others, and examples ofthe inorganic material may include Al₂O₃, SiO₂, SiN_(x), or others. Moreparticularly, the first bonding layer 349 may be formed of spin-on-glass(SOG).

Further, the second current spreader 338 may be disposed to overlap thethird current spreader 348, without being limited thereto.

Thereafter, the substrate 331 may be removed from the second LED stack333 by laser lift-off or chemical lift-off. As such, an upper surface ofthe first conductivity type semiconductor layer 333 a of the second LEDstack 333 is exposed. The exposed surface of the first conductivity typesemiconductor layer 333 a may be subjected to texturing.

Referring to FIG. 43 , a second color filter 357 is formed on the secondLED stack 333. The second color filter 357 may be formed by alternatelystacking insulation layers having different refractive indices and issubstantially the same as that described with reference to FIG. 38A andFIG. 38B, and thus, detailed descriptions thereof will be omitted.

Subsequently, referring to FIG. 44 , the first LED stack 323 of FIG. 39is bonded to the second LED stack 333. The second color filter 357 maybe bonded to the first transparent electrode 325 to face each other. Forexample, bonding material layers may be formed on the second colorfilter 357 and the first transparent electrode 325, and are bonded toeach other to form a second bonding layer 359. The bonding materiallayers are substantially the same as those described with reference tothe first bonding layer 349, and thus, detailed descriptions thereofwill be omitted.

Meanwhile, the first current spreader 328 may be disposed to overlapwith the second or third current spreader 338 or 348, without beinglimited thereto.

Referring to FIG. 45A and FIG. 45B, holes h1, h2, h3, h4, h5 are formedthrough the first substrate 321, and isolation trenches defining deviceregions are also formed to expose the second substrate 341.

The hole h1 exposes the first transparent electrode 325, the hole h2exposes the first conductivity type semiconductor layer 333 a, the holeh3 exposes the second transparent electrode 335, the hole h4 exposes thethird transparent electrode 345, and the hole h5 exposes an ohmicelectrode 346. When the hole h5 exposes the ohmic electrode 346, anupper surface of the ohmic electrode 346 may include an anti-etchinglayer, for example, a Ni layer. In an exemplary embodiment, the holesh1, h3, and h4 may expose the first to third current spreaders 328, 338,and 348, respectively. In addition, the hole h5 may expose the firstconductivity type semiconductor layer 343 a.

The isolation trench may expose the second substrate 341 along aperiphery of each of the first to third LED stacks 323, 333, and 343.Although FIG. 45B shows the isolation trench being formed to expose thesecond substrate 341, in some exemplary embodiments, the isolationtrench may be formed to expose the first conductivity type semiconductorlayer 343 a. The hole h5 may be formed together with the isolationtrench by the etching technique or the like, without being limitedthereto.

The holes h1, h2, h3, h4, h5 and the isolation trenches may be formed byphotolithography and etching techniques, and the sequence of formationis not particularly limited. For example, a shallower hole may be formedprior to a deeper hole, or vice versa. The isolation trench may beformed after or before formation of the holes h1, h2, h3, h4, h5.Alternatively, the isolation trench may be formed together with the holeh5, as described above.

Referring to FIG. 46A and FIG. 46B, a lower insulation layer 361 isformed on the first substrate 321. The lower insulation layer 361 maycover side surfaces of the first substrate 321, and side surfaces of thefirst to third LED stacks 323, 333, 343, which are exposed through theisolation trench.

The lower insulation layer 361 may also cover side surfaces of the holesh1, h2, h3, h4, h5. The lower insulation layer 361 is subjected topatterning so as to expose a bottom of each of the holes h1, h2, h3, h4,h5.

The lower insulation layer 361 may be formed of silicon oxide or siliconnitride, but the inventive concepts are not limited thereto. The lowerinsulation layer 361 may be a distributed Bragg reflector.

Subsequently, through-hole vias 363 b, 365 a, 365 b, 367 a, 367 b areformed in the holes h1, h2, h3, h4, h5. The through-hole vias 363 b, 365a, 365 b, 367 a, 367 b may be formed by electric plating or the like.For example, a seed layer may be first formed inside the holes h1, h2,h3, h4, h5 and the through-hole vias 363 b, 365 a, 365 b, 367 a, 367 bmay be formed by plating with copper using the seed layer. The seedlayer may be formed of Ni/Al/Ti/Cu, for example.

Referring to FIG. 47A and FIG. 47B, the upper surface of the firstsubstrate 321 may be exposed by patterning the lower insulation layer361. The process of patterning the lower insulation layer 361 to exposethe upper surface of the first substrate 321 may be performed uponpatterning the lower insulation layer 361 to expose the bottoms of theholes h1, h2, h3, h4, h5.

A substantial portion of the upper surface of the first substrate 321may be exposed, for example, at least half the area of the lightemitting device.

Thereafter, an ohmic electrode 363 a is formed on the exposed uppersurface of the first substrate 321. The ohmic electrode 363 a may beformed of a conductive layer, such as Au—Te alloys or Au—Ge alloys, forexample, and be in ohmic contact with the first substrate 321.

As shown in FIG. 47A, the ohmic electrode 363 a is separated from thethrough-hole vias 363 b, 365 a, 365 b, 367 a, 367 b.

Referring to FIG. 48A and FIG. 48B, an upper insulation layer 371 isformed to cover the lower insulation layer 361 and the ohmic electrode363 a. The upper insulation layer 371 may also cover the lowerinsulation layer 361 at the side surfaces of the first to third LEDstacks 323, 333, 343 and the first substrate 321. The upper insulationlayer 371 may be patterned to form openings exposing the through-holevias 363 b, 365 a, 365 b, 367 a, 367 b together with an opening 371 aexposing the ohmic electrode 363 a.

The upper insulation layer 371 may be formed of a transparent oxidelayer, such as silicon oxide or silicon nitride, but the inventiveconcepts are not limited thereto. For example, the upper insulationlayer 371 may be a light reflective insulation layer, for example, adistributed Bragg reflector, or a light blocking layer such as a lightabsorption layer.

Referring to FIG. 49A and FIG. 49B, electrode pads 373 a, 373 b, 373 c,373 d are formed on the upper insulation layer 371. The electrode pads373 a, 373 b, 373 c, 373 d may include first to third electrode pads 373a, 373 b, 373 c and a common electrode pad 373 d.

The first electrode pad 373 a may be connected to the ohmic electrode363 a exposed through the opening 371 a of the upper insulation layer371, the second electrode pad 373 b may be connected to the through-holevia 365 a, and the third electrode pad 373 c may be connected to thethrough-hole via 367 a. The common electrode pad 373 d may be commonlyconnected to the through-hole vias 363 b, 365 b, 367 b.

The electrode pads 373 a, 373 b, 373 c, 373 d are electrically separatedfrom one another, and thus, each of the first to third LED stacks 323,333, 343 is electrically connected to two electrode pads to beindependently driven.

Thereafter, the second substrate 341 is divided into regions for eachlight emitting device, thereby completing the light emitting device 300.As shown in FIG. 49A, the electrode pads 373 a, 373 b, 373 c, 373 d maybe disposed at four corners of each light emitting device 300. Theelectrode pads 373 a, 373 b, 373 c, 373 d may have substantially arectangular shape, but the inventive concepts are not limited thereto.

Although the second substrate 341 is described as being divided, in someexemplary embodiments, the second substrate 341 may be removed. In thiscase, an exposed surface of the first conductivity type semiconductorlayer 343 a may be subjected to texturing.

FIG. 50A and FIG. 50B are a schematic plan view and a cross-sectionalview of a light emitting device 302 for a display according to anotherexemplary embodiment, respectively.

Referring to FIG. 50A and FIG. 50B, the light emitting device 302according to an exemplary embodiment is substantially similar to thelight emitting device 300 described with reference to FIG. 38A and FIG.38B, except that the anodes of the first to third LED stacks 323, 333,343 are independently connected to first to third electrode pads 3173 a,3173 b, 3173 c, and the cathodes thereof are electrically connected to acommon electrode pad 3173 d.

More particularly, the first electrode pad 3173 a is electricallyconnected to the first transparent electrode 325 through a through-holevia 3163 b, the second electrode pad 3173 b is electrically connected tothe second transparent electrode 335 through a through-hole via 3165 b,and the third electrode pad 3173 c is electrically connected to thethird transparent electrode 345 through a through-hole via 3167 b. Thecommon electrode pad 3173 d is electrically connected to an ohmicelectrode 3163 a exposed through the opening 371 a of the upperinsulation layer 371, and is also electrically connected to the firstconductivity type semiconductor layers 333 a and 343 a of the second LEDstack 333 and the third LED stack 343 through the through-hole vias 3165a, 3167 a. For example, the through-hole via 3165 a may be connected tothe first conductivity type semiconductor layer 333 a, and thethrough-hole via 3175 a may be connected to the ohmic electrode 346 inohmic contact with the first conductivity type semiconductor layer 343a.

Each of the light emitting devices 300, 302 according to the exemplaryembodiments includes the first to third LED stacks 323, 333, 343, whichemit red, green and blue light, respectively, and thus can be used asone pixel in a display apparatus. As described in FIG. 37 , the displayapparatus may be realized by arranging a plurality of light emittingdevices 300 or 302 on the circuit board 301. Since each of the lightemitting devices 300, 302 includes the first to third LED stacks 323,333, 343, it is possible to increase the area of a subpixel in onepixel. Furthermore, the first to third LED stacks 323, 333, 343 can bemounted on the circuit board by mounting one light emitting device,thereby reducing the number of mounting processes.

As described in FIG. 37 , the light emitting devices mounted on thecircuit board 301 can be driven in a passive matrix or active matrixdriving manner.

FIG. 51 is a schematic plan view of a display apparatus according to anexemplary embodiment.

Referring to FIG. 51 , the display apparatus according to an exemplaryembodiment includes a circuit board 401 and a plurality of lightemitting devices 400.

The circuit board 401 may include a circuit for passive matrix drivingor active matrix driving. In an exemplary embodiment, the circuit board401 may include interconnection lines and resistors. In anotherexemplary embodiment, the circuit board 401 may include interconnectionlines, transistors and capacitors. The circuit board 401 may also haveelectrode pads disposed on an upper surface thereof to allow electricalconnection to the circuit therein.

The light emitting devices 400 are arranged on the circuit board 401.Each of the light emitting devices 400 may constitute one pixel. Thelight emitting device 400 may include electrode pads 473 a, 473 b, 473c, and 473 d, which are electrically connected to the circuit board 401.In addition, the light emitting device 400 may include a substrate 441disposed at an upper surface thereof. Since the light emitting devices400 are separated from one another, the substrates 441 disposed at theupper surfaces of the light emitting devices 400 are also separated fromone another.

Details of the light emitting device 400 will be described withreference to FIG. 52A and FIG. 52B. FIG. 52A is a schematic plan view ofthe light emitting device 400 for a display according to an exemplaryembodiment, and FIG. 52B is a schematic cross-sectional view taken alongline A-A of FIG. 52A. Although the electrode pads 473 a, 473 b, 473 c,and 473 d are illustrated and described as being disposed at an upperside of the light emitting device, in some exemplary embodiments, thelight emitting device 400 may be flip-bonded on the circuit board 401,in this case, the electrode pads 473 a, 473 b, 473 c, and 473 d may bedisposed at a lower side thereof.

Referring to FIG. 52A and FIG. 52B, the light emitting device 400 mayinclude a first substrate 421, a second substrate 441, a distributedBragg reflector 422, a first LED stack 423, a second LED stack 433, athird LED stack 443, a first transparent electrode 425, a secondtransparent electrode 435, a third transparent electrode 445, an ohmicelectrode 446, a first current spreader 428, a second current spreader438, a third current spreader 448, a first color filter 447, a secondcolor filter 457, a first bonding layer 449, a second bonding layer 459,a lower insulation layer 461, an upper insulation layer 471, an ohmicelectrode 463 a, through-hole vias 463 b, 465 a, 465 b, 467 a, and 467b, heat pipes 469, and electrode pads 473 a, 473 b, 473 c, and 473 d.

The first substrate 421 may support the LED stacks 423, 433, and 443.The first substrate 421 may be a growth substrate for growing the firstLED stack 423, for example, a GaAs substrate. In particular, the firstsubstrate 421 may have conductivity.

The second substrate 441 may support the LED stacks 423, 433, and 443.The LED stacks 423, 433, and 443 are disposed between the firstsubstrate 421 and the second substrate 441. The second substrate 441 maybe a growth substrate for growing the third LED stack 443. For example,the second substrate 441 may be a sapphire substrate or a GaN substrate,more particularly a patterned sapphire substrate. The first to third LEDstacks are disposed on the second substrate 441 in the order of thethird LED stack 443, the second LED stack 433, and the first LED stack423 from the second substrate 441. In an exemplary embodiment, a singlethird LED stack may be disposed on a single second substrate 441. Thesecond LED stack 433, the first LED stack 423, and the first substrate421 are disposed on the third LED stack 443. Accordingly, the lightemitting device 400 may have a single chip structure of a single pixel.

In another exemplary embodiment, a plurality of third LED stacks 43 maybe disposed on a single second substrate 441. The second LED stack 433,the first LED stack 423, and the first substrate 421 are disposed oneach of the third LED stacks 43, whereby the light emitting device 400has a single chip structure of a plurality of pixels.

In some exemplary embodiments, the second substrate 441 may be omittedand a lower surface of the third LED stack 443 may be exposed. In thiscase, a roughened surface may be formed on the lower surface of thethird LED stack 443 by surface texturing.

Each of the first LED stack 423, the second LED stack 433, and the thirdLED stack 443 includes a first conductivity type semiconductor layer 423a, 433 a, and 443 a, a second conductivity type semiconductor layer 423b, 433 b, and 443 b, and an active layer interposed therebetween,respectively. The active layer may have a multi-quantum well structure.

The LED stacks may emit light having a shorter wavelength as beingdisposed closer to the second substrate 441. For example, the first LEDstack 423 may be an inorganic light emitting diode adapted to emit redlight, the second LED stack 433 may be an inorganic light emitting diodeadapted to emit green light, and the third LED stack 443 may be aninorganic light emitting diode adapted to emit blue light. The first LEDstack 423 may include an AlGaInP-based well layer, the second LED stack433 may include an AlGaInP or AlGaInN-based well layer, and the thirdLED stack 443 may include an AlGaInN-based well layer. However, theinventive concepts are not limited thereto. When the light emittingdevice 400 includes a micro LED, which has a surface area less thanabout 10,000 square μm as known in the art, or less than about 4,000square μm or 2,500 square μm in other exemplary embodiments, the firstLED stack 423 may emit any one of red, green, and blue light, and thesecond and third LED stacks 433 and 443 may emit a different one of red,green, and blue light, without adversely affecting operation, due to thesmall form factor of a micro LED

In addition, the first conductivity type semiconductor layer 423 a, 433a, and 443 a of each of the LED stacks 423, 433, and 443 may be ann-type semiconductor layer, and the second conductivity typesemiconductor layer 423 b, 433 b, and 443 b thereof may be a p-typesemiconductor layer. In the illustrated exemplary embodiment, an uppersurface of the first LED stack 423 is an n-type semiconductor layer 423a, an upper surface of the second LED stack 433 is an n-typesemiconductor layer 433 a, and an upper surface of the third LED stack443 is a p-type semiconductor layer 443 b. In particular, only thesemiconductor layers of the third LED stack 443 are stacked in adifferent sequence from those of the first and second LED stacks 423 and433. The first conductivity type semiconductor layer 443 a of the thirdLED stack 443 may be subjected to surface texturing to improve lightextraction efficiency. In some exemplary embodiments, the firstconductivity type semiconductor layer 433 a of the second LED stack 433may also be subjected to surface texturing.

The first LED stack 423, the second LED stack 433, and the third LEDstack 443 may be stacked to overlap one another, and may havesubstantially the same luminous area. Further, in each of the LED stacks423, 433, and 443, the first conductivity type semiconductor layer 423a, 433 a, and 443 a may have substantially the same area as the secondconductivity type semiconductor layer 423 b, 433 b, 443 b, respectively.In particular, in each of the first LED stack 423 and the second LEDstack 433 according to an exemplary embodiment, the first conductivitytype semiconductor layer 423 a or 433 a may completely overlap thesecond conductivity type semiconductor layer 423 b or 433 b. In thethird LED stack 443, a hole h5 is formed on the second conductivity typesemiconductor layer 443 b to expose the first conductivity typesemiconductor layer 443 a, and thus, the first conductivity typesemiconductor layer 443 a has a slightly larger area than the secondconductivity type semiconductor layer 443 b.

The first LED stack 423 is disposed apart from the second substrate 441,the second LED stack 433 is disposed under the first LED stack 423, andthe third LED stack 443 is disposed under the second LED stack 433.Since the first LED stack 423 may emit light having a longer wavelengththan the second and third LED stacks 433 and 443, light generated fromthe first LED stack 423 may be emitted outside after passing through thesecond and third LED stacks 433 and 443 and the second substrate 441. Inaddition, since the second LED stack 433 may emit light having a longerwavelength than the third LED stack 443, light generated from the secondLED stack 433 may be emitted outside after passing through the third LEDstack 443 and the second substrate 441.

The distributed Bragg reflector 422 may be disposed between the firstsubstrate 421 and the first LED stack 423. The distributed Braggreflector 422 reflects light generated from the first LED stack 423 toprevent the light from being lost through absorption by the substrate421. For example, the distributed Bragg reflector 422 may be formed byalternately stacking AlAs and AlGaAs-based semiconductor layers oneabove another.

The first transparent electrode 425 may be disposed between the firstLED stack 423 and the second LED stack 433. The first transparentelectrode 425 is in ohmic contact with the second conductivity typesemiconductor layer 423 b of the first LED stack 423, and transmitslight generated from the first LED stack 423. The first transparentelectrode 425 may include a metal layer or a transparent oxide layer,such as an indium tin oxide (ITO) layer or others.

The second transparent electrode 435 is in ohmic contact with the secondconductivity type semiconductor layer 433 b of the second LED stack 433.As shown in the drawings, the second transparent electrode 435 contactsa lower surface of the second LED stack 433 between the second LED stack433 and the third LED stack 443. The second transparent electrode 435may include a metal layer or a conductive oxide layer that istransparent to red light and green light.

The third transparent electrode 445 is in ohmic contact with the secondconductivity type semiconductor layer 443 b of the third LED stack 443.The third transparent electrode 445 may be disposed between the secondLED stack 433 and the third LED stack 443, and contacts the uppersurface of the third LED stack 443. The third transparent electrode 445may include a metal layer or a conductive oxide layer transparent to redlight and green light. The third transparent electrode 445 may also betransparent to blue light. Each of the second transparent electrode 435and the third transparent electrode 445 is in ohmic contact with thep-type semiconductor layer of each of the LED stacks to assist incurrent spreading. Examples of conductive oxide layers for the secondand third transparent electrodes 435 and 445 may include SnO₂, InO₂,ITO, ZnO, IZO, or others.

The first to third current spreaders 428, 438, and 448 may be disposedto spread current in the second conductivity type semiconductor layers423 b, 433 b, and 443 b of the first to third LED stacks 423, 433, and443. As shown in the drawing, the first current spreader 428 may bedisposed on the second conductivity type semiconductor layer 423 bexposed through the first transparent electrode 425, the second currentspreader 438 may be disposed on the second conductivity typesemiconductor layer 433 b exposed through the second transparentelectrode 435, and the third current spreader 448 may be disposed on thesecond conductivity type semiconductor layer 443 b exposed through thethird transparent electrode 445. As shown in FIG. 52A, each of the firstto third current spreaders 428, 438, and 448 may be disposed along anedge of each of the first to third LED stacks 423, 433, and 443. Also,each of the first to third current spreaders 428, 438 and 448 may havesubstantially a rectangular shape to surround a center of each LEDstack, but the inventive concepts are not limited thereto, and thecurrent spreaders may have various shapes, such as substantially anelongated or a curved line shape. Further, the first to third currentspreaders 428, 438, and 448 may be disposed to overlap one another,without being limited thereto.

The first to third current spreader 428, 438, and 448 may be separatedfrom the first to third transparent electrode 425, 435, and 445.Accordingly, a gap may be formed between a side surface of the first tothird current spreader 428, 438, and 448 and the first to thirdtransparent electrode 425, 435, and 445. However, the inventive conceptsare not limited thereto, and at least one of the first to third currentspreader 428, 438, and 448 may contact the first to third transparentelectrode 425, 435, and 445.

The first to third current spreader 428, 438, and 448 may be formed of amaterial having a higher electrical conductivity than the first to thirdtransparent electrode 425, 435, and 445, and thus, current may be evenlyspread over wide regions of the second conductivity type semiconductorlayers 423 b, 433 b, and 443 b.

The ohmic electrode 446 is in ohmic contact with the first conductivitytype semiconductor layer 443 a of the third LED stack 443. The ohmicelectrode 446 may be disposed on the first conductivity typesemiconductor layer 443 a exposed through the third transparentelectrode 445 and the second conductivity type semiconductor layer 443b. The ohmic electrode 446 may be formed of Ni/Au/Ti or Ni/Au/Ti/Ni, forexample. When a surface of the ohmic electrode 446 is exposed during theetching process, a Ni layer may be formed on the surface of the ohmicelectrode 446 to function as an etching stopper layer. The ohmicelectrode 446 may be formed to have various shapes, and in particular,it may be formed to have substantially an elongated shape to function asa current spreader. In some exemplary embodiments, the ohmic electrode446 may be omitted.

The first color filter 447 may be disposed between the third transparentelectrode 445 and the second LED stack 433, and the second color filter457 may be disposed between the second LED stack 433 and the first LEDstack 423. The first color filter 447 transmits light generated from thefirst and second LED stacks 423 and 433 while reflecting light generatedfrom the third LED stack 443. The second color filter 457 transmitslight generated from the first LED stack 423 while reflecting lightgenerated from the second LED stack 433.

Accordingly, light generated from the first LED stack 423 may be emittedoutside through the second LED stack 433 and the third LED stack 443,and light generated from the second LED stack 433 may be emitted outsidethrough the third LED stack 443. Furthermore, it is possible to preventlight loss by preventing light generated from the second LED stack 433from entering the first LED stack 423, or light generated from the thirdLED stack 443 from entering the second LED stack 433.

In some exemplary embodiments, the second color filter 457 may reflectlight generated from the third LED stack 443.

The first and second color filters 447 and 457 may be, for example, alow pass filter allowing light in a low frequency band, e.g., in a longwavelength band to pass therethrough, a band pass filter allowing lightin a predetermined wavelength band, or a band stop filter that preventslight in a predetermined wavelength band from passing therethrough. Inparticular, each of the first and second color filters 447 and 457 maybe formed by alternately stacking insulation layers having differentrefractive indices one above another, such as TiO₂ and SiO₂, forexample. In particular, each of the first and second color filters 447and 457 may include a distributed Bragg reflector (DBR). In addition, astop band of the distributed Bragg reflector can be controlled byadjusting the thicknesses of TiO₂ and SiO₂layers. The low pass filterand the band pass filter may also be formed by alternately stackinginsulation layers having different refractive indices one above another.

The first bonding layer 449 couples the second LED stack 433 to thethird LED stack 443. The first bonding layer 449 may couple the firstcolor filter 447 to the second transparent electrode 435 between thefirst color filter 447 and the second transparent electrode 435. Forexample, the first bonding layer 449 may be formed of a transparentorganic material or a transparent inorganic material. Examples of theorganic material may include SUB, poly(methyl methacrylate) (PMMA),polyimide, Parylene, benzocyclobutene (BCB), or others, and examples ofthe inorganic material may include Al₂O₃, SiO₂, SiN_(x), or others. Moreparticularly, the first bonding layer 449 may be formed of spin-on-glass(SOG).

The second bonding layer 459 couples the second LED stack 433 to thefirst LED stack 423. As shown in the drawings, the second bonding layer459 may be disposed between the second color filter 457 and the firsttransparent electrode 425. The second bonding layer 459 may be formed ofsubstantially the same material as the first bonding layer 449.

Holes h1, h2, h3, h4, and h5 are formed through the first substrate 421.The hole h1 may be formed through the first substrate 421, thedistributed Bragg reflector 422, and the first LED stack 423 to exposethe first transparent electrode 425. The hole h2 may be formed throughthe first substrate 421, the distributed Bragg reflector 422, the firsttransparent electrode 425, the second bonding layer 459, and the secondcolor filter 457 to expose the first conductivity type semiconductorlayer 433 a of the second LED stack 433.

The hole h3 may be formed through the first substrate 421, thedistributed Bragg reflector 422, the first transparent electrode 425,the second bonding layer 459, and the second color filter 457, and thesecond LED stack 433 to expose the second transparent electrode 435. Thehole h4 may be formed through the first substrate 421, the distributedBragg reflector 422, the first transparent electrode 425, the secondbonding layer 459, the second color filter 457, the second LED stack433, the second transparent electrode 435, the first bonding layer 449,and the first color filter 447 to expose the third transparent electrode445. In addition, the hole h5 may be formed through the first substrate421, the distributed Bragg reflector 422, the first transparentelectrode 425, the second bonding layer 459, the second color filter457, the second LED stack 433, the second transparent electrode 435, thefirst bonding layer 449, and the first color filter 447 to expose theohmic electrode 446. When the ohmic electrode 446 is omitted in someexemplary embodiments, the first conductivity type semiconductor layer443 a may be exposed by the hole h5.

Although the holes h1, h3 and h4 are illustrated as being separated fromone another to expose the first to third transparent electrodes 425,435, and 445, respectively, the inventive concepts are not limitedthereto, and the first to third transparent electrodes 425, 435, and 445may be exposed though a single hole.

In addition, the first to third transparent electrodes 425, 435, and 445are illustrated as being exposed though the holes h1, h3 and h4, but insome exemplary embodiments, the first to third current spreaders 428,438, and 448 may be exposed.

The lower insulation layer 461 covers side surfaces of the firstsubstrate 421 and the first to third LED stacks 423, 433, and 443 whilecovering an upper surface of the first substrate 421. The lowerinsulation layer 461 also covers side surfaces of the holes h1, h2, h3,h4, and h5. However, the lower insulation layer 461 may be subjected topatterning to expose a bottom of each of the holes h1, h2, h3, h4, andh5. Furthermore, the lower insulation layer 461 may also be subjected topatterning to expose the upper surface of the first substrate 421.

The ohmic electrode 463 a is in ohmic contact with the upper surface ofthe first substrate 421. The ohmic electrode 463 a may be formed in anexposed region of the first substrate 421, which is exposed bypatterning the lower insulation layer 461. The ohmic electrode 463 a maybe formed of Au—Te alloys or Au—Ge alloys, for example. Each of thethrough-hole vias 463 b, 465 b, and 467 b may be connected to the firstto third transparent electrodes 425, 435, and 445, and may be connectedto the first to third current spreaders 428, 438, and 448.

The through-hole vias 463 b, 465 a, 465 b, 467 a, and 467 b are disposedin the holes h1, h2, h3, h4, and h5. The through-hole via 463 b may bedisposed in the hole h1, and may be connected to the first transparentelectrode 425. The through-hole via 465 a may be disposed in the holeh2, and be in ohmic contact with the first conductivity typesemiconductor layer 433 a. The through-hole via 465 b may be disposed inthe hole h3, and may be electrically connected to the second transparentelectrode 435. The through-hole via 467 a may be disposed in the holeh5, and may be electrically connected to the first conductivity typesemiconductor layer 443 a. For example, the through-hole via 467 a maybe electrically connected to the ohmic electrode 446 through the holeh5. The through-hole via 467 b may be disposed in the hole h4, and maybe connected to the third transparent electrode 445. The through-holevia 463 b, 465 b, and467 b may be connected to the first to thirdtransparent electrode 425, 435, and 445, or may be connected to thefirst to third current spreader 428, 438, and 448.

The through-hole vias 463 b, 465 a, 465 b, 467 a, and 467 b may beseparated and insulted from the substrate 421 inside the holes by thelower insulation layer 461. The through-hole vias 463 b, 465 a, 465 b,467 a, and 467 b may pass through the substrate 421 and may also passthrough the distributed Bragg reflector 422.

At least a portion of each of the heat pipes 469 is disposed inside thesubstrate 421. In particular, the heat pipes 469 may be disposed overthe first LED stack 423, and may be disposed on the distributed Braggreflector 422. The heat pipes 469 may contact the distributed Braggreflector 422, or may be separated from the distributed Bragg reflector422. As the heat pipes 469 are disposed on the distributed Braggreflector 422, the distributed Bragg reflector 422 may not be damaged bythe heat pipes 469, and thus, reduction of the reflectance in thedistributed Bragg reflector 422 by the heat pipes 469 may be prevented.However, the inventive concepts are not limited thereto, and a portionof the heat pipes 469 may be disposed in the distributed Bragg reflector422.

As shown in FIG. 52B, the heat pipes 469 may be connected to the ohmicelectrode 463 a. However, the inventive concepts are not limitedthereto, and the heat pipes 469 may be separated from the ohmicelectrode 463 a. Further, an upper surface of the heat pipes 469 may besubstantially flush with an upper surface of the substrate 421, but insome exemplary embodiments, the upper surface of the heat pipes 469 mayprotrude above the upper surface of the substrate 421.

The upper insulation layer 471 covers the lower insulation layer 461 andthe ohmic electrode 463 a. The upper insulation layer 471 may cover thelower insulation layer 461 at the sides of the first substrate 421, thefirst to third LED stacks 423, 433 and 443. The top surface of the lowerinsulation layer 461 may be covered by the upper insulation layer 471.The upper insulation layer 471 may have an opening 471 a for exposingthe ohmic electrode 463 a, and may have openings for exposing thethrough-hole vias 463 b, 465 a, 465 b, 467 a, and 467 b.

The upper insulation layer 471 may cover the upper portion of the heatpipes 469, but in some exemplary embodiments, the upper insulation layer471 may expose the upper surface of the heat pipes 469.

The lower insulation layer 461 or the upper insulation layer 471 may beformed of silicon oxide or silicon nitride, without being limitedthereto. For example, the lower insulation layer 461 or the upperinsulation layer 471 may be a distributed Bragg reflector formed bystacking insulation layers having different refractive indices. Inparticular, the upper insulation layer 471 may be a light reflectivelayer or a light blocking layer.

The electrode pads 473 a, 473 b, 473 c, and 473 d are disposed on theupper insulation layer 471, and are electrically connected to the firstto third LED stacks 423, 433, and 443. For example, the first electrodepad 473 a is electrically connected to the ohmic electrode 463 a exposedthrough the opening 471 a of the upper insulation layer 471, and thesecond electrode pad 473 b is electrically connected to the through-holevia 465 a exposed through the opening of the upper insulation layer 471.In addition, the third electrode pad 473 c is electrically connected tothe through-hole via 467 a exposed through the opening of the upperinsulation layer 471. A common electrode pad 473 d is electricallyconnected to the through-hole vias 463 b, 465 b, and 467 b in common.

Accordingly, the common electrode pad 473 d is electrically connected tothe second conductivity type semiconductor layers 423 b, 433 b, and 443b of the first to third LED stacks 423, 433, and 443, and each of theelectrode pads 473 a, 473 b, and 473 c is electrically connected to thefirst conductivity type semiconductor layers 423 a, 433 a, and 443 a ofthe first to third LED stacks 423, 433, and 443, respectively.

According to the illustrated exemplary embodiment, the first LED stack423 is electrically connected to the electrode pads 473 d and 473 a, thesecond LED stack 433 is electrically connected to the electrode pads 473d and 473 b, and the third LED stack 443 is electrically connected tothe electrode pads 473 d and 473 c. As such, anodes of the first LEDstack 423, the second LED stack 433, and the third LED stack 443 areelectrically connected to the electrode pad 473 d, and the cathodesthereof are electrically connected to the first to third electrode pads473 a, and 473 b, and 473 c, respectively. Accordingly, the first tothird LED stacks 423, 433, and 443 may be independently driven.

The heat pipes 469 may be electrically connected to the first electrodepad 473 a through the ohmic electrode 463 a. In some exemplaryembodiments, a portion of the heat pipes 469 may be disposed in a lowerregion of the first electrode pad 473 a.

FIGS. 53A, 53B, 54A, 54B, 55A, 55B, 56, 57, 58, 59A, 59B, 60A, 60B, 61A,61B, 62A, 62B, 63A, 63B, 64A, 64B, 65A, and 65B are schematic plan viewsand cross-sectional views illustrating a method of manufacturing a lightemitting device for a display according to an exemplary embodiment ofthe present disclosure. In the drawings, each plan view corresponds toFIG. 52A, and each cross-sectional view is taken along line A-A ofcorresponding plan view. FIGS. 53B and 54B are cross-sectional viewstaken along line B-B of FIGS. 53A and 54A, respectively.

First, referring to FIGS. 53A and 53B, a first LED stack 423 is grown ona first substrate 421. The first substrate 421 may be a GaAs substrate,for example. In addition, the first LED stack 423 may includeAlGaInP-based semiconductor layers, and includes a first conductivitytype semiconductor layer 423 a, an active layer, and a secondconductivity type semiconductor layer 423 b. The first conductivity typemay be an n-type, and the second conductivity type may be a p-type. Adistributed Bragg reflector 422 may be formed prior to growth of thefirst LED stack 423. The distributed Bragg reflector 422 may have astack structure formed by repeatedly stacking AlAs/AlGaAs layers, forexample.

A first transparent electrode 425 may be formed on the secondconductivity type semiconductor layer 423 b. The first transparentelectrode 425 may be formed of a transparent oxide layer, such as indiumtin oxide (ITO), a transparent metal layer, or others.

The first transparent electrode 425 may be formed to have an opening forexposing the second conductivity type semiconductor layer 423 b, and afirst current spreader 428 may be formed in the opening. The firsttransparent electrode 425 may be patterned by photolithography andetching techniques, for example, which may form the opening for exposingthe second conductivity type semiconductor layer 423 b. The opening ofthe first transparent electrode 425 may define a region to which thefirst current spreader 428 may be formed.

Although FIG. 53A shows the first current spreader 428 as havingsubstantially a rectangular shape, the inventive concepts are notlimited thereto. For example, the first current spreader 428 may havevarious shapes, such as substantially an elongated or a curved lineshape. The first current spreader 428 may be formed by the lift-offtechnique or the like, and a side thereof may be separated from thefirst transparent electrode 425. The first current spreader 428 may beformed to have the same or similar thickness as the first transparentelectrode 425.

Referring to FIGS. 54A and 54B, a second LED stack 433 is grown on asubstrate 431, and a second transparent electrode 435 is formed on thesecond LED stack 433. The second LED stack 433 may include AlGaInP-basedor AlGaInN-based semiconductor layers, and may include a firstconductivity type semiconductor layer 433 a, an active layer, and asecond conductivity type semiconductor layer 433 b. The substrate 431may be a substrate capable of growing AlGaInP-based semiconductor layersthereon, for example, a GaAs substrate or a GaP substrate, or asubstrate capable of growing AlGaInN-based semiconductor layers thereon,for example, a sapphire substrate. The first conductivity type may be ann-type, and the second conductivity type may be a p-type. A compositionratio of Al, Ga, and In for the second LED stack 433 may be determinedso that the second LED stack 433 may emit green light, for example. Inaddition, when the GaP substrate is used, a pure GaP layer or a nitrogen(N) doped GaP layer is formed on the GaP to emit green light. The secondtransparent electrode 435 is in ohmic contact with the secondconductivity type semiconductor layer 433 b. The second transparentelectrode 435 may be formed of a metal layer or a conductive oxidelayer, such as SnO₂, InO₂, ITO, ZnO, IZO, and the like.

The second transparent electrode 435 may be formed to have an openingfor exposing the second conductivity type semiconductor layer 433 b, anda second current spreader 438 may be formed in the opening. The secondtransparent electrode 435 may be patterned by photolithography andetching techniques, for example, which may form the opening for exposingthe second conductivity type semiconductor layer 433 b. The opening ofthe second transparent electrode 435 may define a region to which thesecond current spreader 438 may be formed.

Although FIG. 54A shows the second current spreader 438 as havingsubstantially a rectangular shape, the inventive concepts are notlimited thereto. For example, the second current spreader 438 may havevarious shapes, such as substantially an elongated or a curved lineshape. The second current spreader 438 may be formed by the lift-offtechnique or the like, and a side thereof may be separated from thesecond transparent electrode 435. The second current spreader 438 may beformed to have the same or similar thickness as the second transparentelectrode 435.

The second current spreader 438 may have substantially the same shapeand the same size as the first current spreader 428, but the inventiveconcepts are not limited thereto.

Referring to FIGS. 55A and 55B, a third LED stack 443 is grown on asecond substrate 441, and a third transparent electrode 445 is formed onthe third LED stack 443. The third LED stack 443 may includeAlGaInN-based semiconductor layers, and may include a first conductivitytype semiconductor layer 443 a, an active layer, and a secondconductivity type semiconductor layer 443 b. The first conductivity typemay be an n-type, and the second conductivity type may be a p-type.

The second substrate 441 is a substrate capable of growing GaN-basedsemiconductor layers thereon, and may be different from the firstsubstrate 421. A composition ratio of AlGaInN for the third LED stack443 is determined to allow the third LED stack 443 to emit blue light,for example. The third transparent electrode 445 is in ohmic contactwith the second conductivity type semiconductor layer 443 b. The thirdtransparent electrode 445 may be formed of a conductive oxide layer,such as SnO₂, InO₂, ITO, ZnO, IZO, and the like.

The third transparent electrode 445 may be formed to have an opening forexposing the first conductivity type semiconductor layer 443 a, and anopening for exposing the second conductivity type semiconductor layer443 b. The opening for exposing the first conductivity typesemiconductor layer 443 a may define a region to which an ohmicelectrode 446 may be formed, and the opening for exposing the secondconductivity type semiconductor layer 443 b may define a region to whicha third current spreader 448 may be formed.

The third transparent electrode 445 may be patterned by photolithographyand etching techniques, for example, which may form the openings forexposing the second conductivity type semiconductor layer 443 b.Subsequently, the first conductivity type semiconductor layer 443 a maybe exposed by partially etching the second conductivity typesemiconductor layer 443 b, and the ohmic electrode 446 may be formed inan exposed region of the first conductivity type semiconductor layer 443a. The ohmic electrode 446 may be formed of a metal layer and be inohmic contact with the first conductivity type semiconductor layer 443a. For example, the ohmic electrode 446 may be formed of a multilayerstructure of Ni/Au/Ti or Ni/Au/Ti/Ni. The ohmic electrode 446 iselectrically separated from the third transparent electrode 445 and thesecond conductivity type semiconductor layer 443 b.

The third current spreader 448 is formed in an exposed region of thesecond conductivity type semiconductor layer 443 b. Although FIG. 55Ashows that the third current spreader 448 has substantially arectangular shape, the inventive concepts are not limited thereto. Forexample, the third current spreader 448 may have various shapes, such assubstantially an elongated or a curved line shape. The third currentspreader 448 may be formed by the lift-off technique or the like, and aside thereof may be separated from the third transparent electrode 445.The third current spreader 448 may be formed to have the same or similarthickness as the third transparent electrode 445.

The third current spreader 448 may have substantially the same shape andthe same size as the first or second current spreader 428 or 438, butthe inventive concepts are not limited thereto.

Then, a first color filter 447 is formed on the third transparentelectrode 445. Since the first color filter 447 is substantially thesame as that described with reference to FIG. 52A and FIG. 52B, detaileddescriptions thereof will be omitted to avoid redundancy.

Referring to FIG. 56 , the second LED stack 433 of FIG. 54A and FIG. 54Bis bonded on the third LED stack 443 of FIG. 55A and FIG. 55B, and thesecond substrate 431 is removed therefrom.

The first color filter 447 is bonded to the second transparent electrode435 to face each other. For example, bonding material layers may beformed on the first color filter 447 and the second transparentelectrode 435, and are bonded to each other to form a first bondinglayer 449. The bonding material layers may be transparent organicmaterial layers or transparent inorganic material layers, for example.Examples of the organic material may include SU8, poly(methylmethacrylate) (PMMA), polyimide, Parylene, benzocyclobutene (BCB), orothers, and examples of the inorganic material may include Al₂O₃, SiO₂,SiN_(x), or others. More particularly, the first bonding layer 449 maybe formed of spin-on-glass (SOG).

The second current spreader 438 may be disposed to overlap the thirdcurrent spreader 448, but the inventive concepts are not limitedthereto.

Thereafter, the substrate 431 may be removed from the second LED stack433 by laser lift-off or chemical lift-off. As such, an upper surface ofthe first conductivity type semiconductor layer 433 a of the second LEDstack 433 is exposed. The exposed surface of the first conductivity typesemiconductor layer 433 a may be subjected to texturing.

Referring to FIG. 57 , a second color filter 457 is formed on the secondLED stack 433. The second color filter 457 may be formed by alternatelystacking insulation layers having different refractive indices and issubstantially the same as that described with reference to FIG. 52A andFIG. 52B, and thus, detailed descriptions thereof will be omitted toavoid redundancy.

Subsequently, referring to FIG. 58 , the first LED stack 423 of FIGS.53A and 53B is bonded to the second LED stack 433. The second colorfilter 457 may be bonded to the first transparent electrode 425 to faceeach other. For example, bonding material layers may be formed on thesecond color filter 457 and the first transparent electrode 425, and arebonded to each other to form a second bonding layer 459. The bondingmaterial layers are substantially the same as those described withreference to the first bonding layer 449, and thus, detaileddescriptions thereof will be omitted.

The first current spreader 428 may be disposed to overlap the second orthird current spreader 438 or 448, but the inventive concepts are notlimited thereto.

Referring to FIG. 59A and FIG. 59B, the holes h1, h2, h3, h4, and h5 areformed through the first substrate 421, and isolation trenches definingdevice regions are formed to expose the second substrate 441.

The hole h1 exposes the first transparent electrode 425, the hole h2exposes the first conductivity type semiconductor layer 433 a, the holeh3 exposes the second transparent electrode 435, the hole h4 exposes thethird transparent electrode 445, and the hole h5 exposes an ohmicelectrode 446. When the hole h5 exposes the ohmic electrode 446, anupper surface of the ohmic electrode 446 may include an anti-etchinglayer, for example, a Ni layer. In an exemplary embodiment, the holesh1, h3, and h4 may expose the first to third current spreaders 428, 438,and 448, respectively. In addition, the hole h5 may expose the firstconductivity type semiconductor layer 443 a.

The isolation trench may expose the second substrate 441 along aperiphery of each of the first to third LED stacks 423, 433, and 443.Although the isolation trench is illustrated as being formed to exposethe second substrate 441 in the illustrated exemplary embodiment, insome exemplary embodiments, the isolation trench may be formed to exposethe first conductivity type semiconductor layer 443 a. The hole h5 maybe formed together with the isolation trench by the etching technique orthe like, but the inventive concepts are not limited thereto.

The holes h1, h2, h3, h4, and h5 and the isolation trenches may beformed by photolithography and etching techniques, and are not limitedto a particular formation sequence. For example, a shallower hole may beformed prior to a deeper hole, or vice versa. The isolation trench maybe formed before or after forming the holes h1, h2, h3, h4, and h5.Alternatively, the isolation trench may be formed together with the holeh5, as described above.

Referring to FIG. 60A and FIG. 60B, a lower insulation layer 461 isformed on the first substrate 421. The lower insulation layer 461 maycover side surfaces of the first substrate 421, and side surfaces of thefirst to third LED stacks 423, 433, and 443, which are exposed throughthe isolation trench.

The lower insulation layer 461 may also cover side surfaces of the holesh1, h2, h3, h4, and h5. The lower insulation layer 461 may be patternedto expose a bottom of each of the holes h1, h2, h3, h4, and h5. Inaddition, the lower insulation layer 461 may be patterned to expose theupper surface of the substrate 421. The first substrate 421 may beexposed over a relatively large area, which may exceed more than half ofthe light emitting device area, for example.

A process of exposing the bottoms of the holes h1, h2, h3, h4, and h5and a process of exposing the upper surface of the substrate 421 may beperformed in the same process or in a separate process.

The lower insulation layer 461 may be formed of silicon oxide or siliconnitride, without being limited thereto. The lower insulation layer 461may be a distributed Bragg reflector.

Referring to FIGS. 61A and 61B, holes h6 are formed in the substrate421. The holes h6 may be disposed across the substrate 421. The holes h6may expose a distributed Bragg reflector 422 through the substrate 421as shown in FIG. 61B, but the inventive concepts are not limitedthereto. For example, the bottom surfaces of the holes h6 formed insidethe substrate 421, such that the holes h6 may be separated from thedistributed Bragg reflector 422 and disposed over the distributed Braggreflector 422. In another exemplary embodiment, the holes h6 may beextended into the distributed Bragg reflector 422.

Referring to FIGS. 62A and 62B, through-hole vias 463 b, 465 a, 465 b,467 a, and 467 b are formed inside the holes h1, h2, h3, h4, and h5, andheat pipes 469 are formed inside the holes h6. The through-hole vias 463b, 465 a, 465 b, 467 a, and 467 b, and the heat pipes 469 may be formedby electric plating or the like. For example, a seed layer may be firstformed inside the holes h1, h2, h3, h4, h5, and h6, and the through-holevias 463 b, 465 a, 465 b, 467 a, and 467 b, and the heat pipes 469 maybe formed by plating with copper using the seed layer. The seed layermay be formed of Ni/Al/Ti/Cu, for example.

In the illustrated exemplary embodiment, the through-hole vias 463 b,465 a, 465 b, 467 a, and 467 b are separated from the substrate 421 bythe lower insulation layer 461. The heat pipes 469, however, may contactthe substrate 421 inside the substrate 421. Accordingly, heat exchangemay occur between the heat pipes 469 and the substrate 421, such thatheat generated in the LED stacks 423, 433, and 443 may be easily spreadinto the substrate 421 and/or to the outside.

Referring to FIGS. 63A and 63B, an ohmic electrode 463 a is formed onthe first substrate 421. The ohmic electrode 463 a may be formed in anexposed region of the first substrate 421, which is exposed bypatterning the lower insulation layer 461. The ohmic electrode 463 a maybe formed as a conductive layer in ohmic contact with the firstsubstrate 421, and may be formed of Au—Te alloys or Au—Ge alloys, forexample.

As shown in FIG. 63A, the ohmic electrode 463 a may be separated fromthe through-hole vias 463 b, 465 a, 465 b, 467 a and 467 b, and maycover the heat pipes 469. However, the inventive concepts are notlimited thereto, and the ohmic electrode 463 a may be separated from theheat pipes 469.

Referring to FIGS. 64A and 64B, an upper insulation layer 471 is formedto cover the lower insulation layer 461 and the ohmic electrode 463 a.The upper insulation layer 471 may also cover the lower insulation layer461 at the side surfaces of the first to third LED stacks 423, 433, and443, and the first substrate 421. The upper insulation layer 471 may bepatterned to form openings exposing the through-hole vias 463 b, 465 a,465 b, 467 a, 467 b together with an opening 471 a exposing the ohmicelectrode 463 a.

The upper insulation layer 471 may be formed of a transparent oxidelayer such as silicon oxide or silicon nitride, without being limitedthereto. For example, the upper insulation layer 471 may be a lightreflective insulation layer, for example, a distributed Bragg reflector,or a light blocking layer such as a light absorption layer.

Referring to FIGS. 65A and 65B, electrode pads 473 a, 473 b, 473 c, and473 d are formed on the upper insulation layer 471. The electrode pads473 a, 473 b, 473 c, and 473 d may include first to third electrode pads473 a, 473 b, and 473 c, and a common electrode pad 473 d.

The first electrode pad 473 a may be connected to the ohmic electrode463 a exposed through the opening 471 a of the upper insulation layer471, the second electrode pad 473 b may be connected to the through-holevia 465 a, and the third electrode pad 473 c may be connected to thethrough-hole via 467 a. The common electrode pad 473 d may be commonlyconnected to the through-hole vias 463 b, 465 b, and 467 b.

The electrode pads 473 a, 473 b, 473 c, and 473 d are electricallyseparated from one another, and thus, each of the first to third LEDstacks 423, 433, and 443 is electrically connected to two electrode padsto be independently driven.

Thereafter, the second substrate 441 is divided into regions for eachlight emitting device, thereby completing the light emitting device 400.As shown in FIG. 65A, the electrode pads 473 a, 473 b, 473 c, and 473 dmay be disposed near four corners of each light emitting device 400.Furthermore, the electrode pads 473 a, 473 b, 473 c, and 473 d may havesubstantially a rectangular shape, but the inventive concepts are notlimited thereto.

Although the second substrate 441 is illustrated as being divided, insome exemplary embodiments, the second substrate 441 may be removed. Inthis case, an exposed surface of the first conductivity typesemiconductor layer 443 may be subjected to texturing.

FIG. 66A and FIG. 66B are a schematic plan view and a cross-sectionalview of a light emitting device 402 for a display according to anotherexemplary embodiment.

Referring to FIGS. 66A and 66B, the light emitting device 402 accordingto the illustrated exemplary embodiment is generally similar to thelight emitting device 400 described with reference to FIG. 52A and FIG.52B, except that the anodes of the first to third LED stacks 423, 433,and 443 are independently connected to first to third electrode pads4173 a, 4173 b, 4173 c, and the cathodes thereof are electricallyconnected to a common electrode pad 4173 d.

In particular, the first electrode pad 4173 a is electrically connectedto the first transparent electrode 425 through a through-hole via 4163b, the second electrode pad 4173 b is electrically connected to thesecond transparent electrode 435 through a through-hole via 4165 b, andthe third electrode pad 4173 c is electrically connected to the thirdtransparent electrode 445 through a through-hole via 4167 b. The commonelectrode pad 4173 d is electrically connected to an ohmic electrode4163 a exposed through the opening 471 a of the upper insulation layer471, and is also electrically connected to the first conductivity typesemiconductor layers 433 a and 443 a of the second LED stack 433 and thethird LED stack 443 through the through-hole vias 4165 a, 4167 a. Forexample, the through-hole via 4165 a may be connected to the firstconductivity type semiconductor layer 433 a, and the through-hole via4167 a may be connected to the ohmic electrode 446 in ohmic contact withthe first conductivity type semiconductor layer 443 a.

The heat pipes 4169 are disposed as described with reference to FIGS.52A and 52B. However, in the illustrated exemplary embodiment, the heatpipes 4169 are connected to the ohmic electrode 4163 a, and thus, may beelectrically connected to the common electrode pad 4173 d.

FIG. 67A and FIG. 67B are a schematic plan view and a cross-sectionalview of a light emitting device 403 for a display according to anotherexemplary embodiment, respectively.

Referring to FIGS. 67A and 67B, the light emitting device 403 accordingto the illustrated exemplary embodiment is generally similar to thelight emitting device 400 described with reference to FIGS. 52A and 52B,except that heat pipes 4269 are insulated from the substrate 421 by thelower insulation layer 461.

More particularly , the lower insulation layer 461 covers sidewalls ofthrough holes h1, h2, h3, h4, and h5, and further covers sidewalls ofthe holes h6 where the heat pipes 4269 are formed. The lower insulationlayer 461 may also cover bottoms of the holes h6.

In addition, the heat pipes 4269 may be separated from the ohmicelectrode 463 a. Accordingly, the heat pipes 4269 may be electricallyisolated from the substrate 421. However, the inventive concepts are notlimited thereto, and the ohmic electrode 463 a may cover the heat pipes4269 and be connected to the heat pipes 4269.

Referring back to FIGS. 60A to 60B, the holes h6 were formed afterforming the lower insulation layer 461 in the light emitting device 400.However, according to the illustrated exemplary embodiment, since theheat pipes 4269 are separated from the substrate 421 by the lowerinsulation layer 461 inside the holes h6, the lower insulation layer 461is also formed inside the holes h6. Accordingly, the lower insulationlayer 461 may be formed after the through holes h1, h2, h3, h4, and h5and the holes h6 are formed. For example, after the through holes h1,h2, h3, h4, and h5 and the holes h6 are formed, sidewalls of the throughholes h1, h2, h3, h4, and h5 and holes h6 are then covered with thelower insulation layer 461. Then, when patterning the lower insulationlayer 461 inside the through holes h1, h2, h3, h4 and h5 to form anopening, the lower insulation layer 461 formed on bottoms of the holesh6 may not be patterned by covering the holes h6 with a mask, forexample.

FIG. 68A and FIG. 68B are a schematic plan view and a cross-sectionalview of a light emitting device 404 for a display according to anotherexemplary embodiment.

Referring to FIGS. 68A and 68B, the light emitting device 404 accordingto the illustrated exemplary embodiment is generally similar to thelight emitting device 403 described with reference to FIGS. 67A and 67B,except that heat pipes 4369 are further disposed under electrode pads4173 a, 4173 b, 4173 c, and 4173 d.

The heat pipes 4369 may be connected to the electrode pads 4173 a, 4173b, 4173 c, and 4173 d, and thus, heat may be quickly discharged to theoutside of the light emitting device 404 through the heat pipes 4369 andthe electrode pads 4173 a, 4173 b, 4173 c, and 4173 d.

Each of the light emitting devices 400, 402, 403, and 404 according tothe exemplary embodiments includes the first to third LED stacks 423,433, and 443, which emits red, green and blue light, respectively, andthus, can be used as one pixel in a display apparatus. As shown in FIG.51 , the display apparatus may be realized by arranging a plurality oflight emitting devices 400, 402, 403, or 404 on the circuit board 401.Since each of the light emitting devices 400, 402, 403 and 404 includesthe first to third LED stacks 423, 433, and 443, it is possible toincrease the area of a subpixel in one pixel. Furthermore, the first tothird LED stacks 423, 433, and 443 can be mounted on the circuit boardby mounting one light emitting device, thereby reducing the number ofmounting processes.

As described in FIG. 51 , the light emitting devices mounted on thecircuit board 401 can be driven in a passive matrix or active matrixdriving manner.

FIG. 69 is a schematic plan view of a display apparatus according to anexemplary embodiment.

Referring to FIG. 69 , the display apparatus according to an exemplaryembodiment includes a circuit board 501 and a plurality of lightemitting devices 500.

The circuit board 501 may include a circuit for passive matrix drivingor active matrix driving. In an exemplary embodiment, the circuit board501 may include interconnection lines and resistors. In anotherexemplary embodiment, the circuit board 501 may include interconnectionlines, transistors, and capacitors. The circuit board 501 may also haveelectrode pads disposed on an upper surface thereof to allow electricalconnection to the circuit therein.

The light emitting devices 500 are arranged on the circuit board 501.Each of the light emitting devices 500 may constitute one pixel. Thelight emitting device 500 includes electrode pads 573 a, 573 b, 573 c,573 d, which are electrically connected to the circuit board 501. Inaddition, the light emitting device 500 may include a substrate 541 atan upper surface thereof. Since the light emitting devices 500 areseparated from one another, the substrates 541 disposed at the uppersurfaces of the light emitting devices 500 are also separated from oneanother.

Details of the light emitting device 500 will be described withreference to FIG. 70A and FIG. 70B. FIG. 70A is a schematic plan view ofthe light emitting device 500 for a display according to an exemplaryembodiment, and FIG. 70B is a schematic cross-sectional view taken alongline A-A of FIG. 70A. Although the electrode pads 573 a, 573 b, 573 c,and 573 d are illustrated and described as being disposed at an upperside of the light emitting device 500, in some exemplary embodiments,the light emitting device 500 may be flip-bonded on the circuit board501 shown in FIG. 69 , and thus, the electrode pads 573 a, 573 b, 573 c,and 573 d may be disposed at a lower side thereof.

Referring to FIG. 70A and FIG. 70B, the light emitting device 500 mayinclude a first substrate 521, a second substrate 541, a distributedBragg reflector 522, a first LED stack 523, a second LED stack 533, athird LED stack 543, a first ohmic electrode 525, a second ohmicelectrode 535, a third ohmic electrode 545, an ohmic electrode 546, afirst color filter 547, a second color filter 557, a first bonding layer549, a second bonding layer 559, a lower insulation layer 561, an upperinsulation layer 571, an ohmic electrode 563 a, through-hole vias 563 b,565 a, 565 b, 567 a, and 567 b, and electrode pads 573 a, 573 b, 573 c,573 d.

The first substrate 521 may support the LED stacks 523, 533, and 543.The first substrate 521 may be a growth substrate for growing the firstLED stack 523, for example, a GaAs substrate. In particular, the firstsubstrate 521 may have conductivity.

The second substrate 541 may support the LED stacks 523, 533, and 543.The LED stacks 523, 533, and 543 are disposed between the firstsubstrate 521 and the second substrate 541. The second substrate 541 maybe a growth substrate for growing the third LED stack 543. For example,the second substrate 541 may be a sapphire substrate or a GaN substrate,particularly a patterned sapphire substrate. The first to third LEDstacks are disposed on the second substrate 541 in the order of thethird LED stack 543, the second LED stack 533, and the first LED stack523 from the second substrate 541. In an exemplary embodiment, a singlethird LED stack 543 may be disposed on a single second substrate 541.The second LED stack 533, the first LED stack 523, and the firstsubstrate 521 are disposed on the third LED stack 543. Accordingly, thelight emitting device 500 may have a single chip structure of a singlepixel.

In another exemplary embodiment, a plurality of third LED stacks 543 maybe disposed on a single second substrate 541. The second LED stack 533,the first LED stack 523 and the first substrate 521 may be disposed oneach of the third LED stacks 543, whereby the light emitting device 500has a single chip structure of a plurality of pixels.

In some exemplary embodiments, the second substrate 541 may be omitted,and a lower surface of the third LED stack 543 may be exposed. In thiscase, a roughened surface may be formed on the lower surface of thethird LED stack 543 by surface texturing.

Each of the first LED stack 523, the second LED stack 533, and the thirdLED stack 543 includes a first conductivity type semiconductor layer 523a, 533 a, and 543 a, a second conductivity type semiconductor layer 523b, 533 b, and 543 b, and an active layer interposed therebetween. Theactive layer may have a multi-quantum well structure.

The LED stacks may emit light having a shorter wavelength as beingdisposed closer to the second substrate 541. For example, the first LEDstack 523 may be an inorganic light emitting diode adapted to emit redlight, the second LED stack 533 may be an inorganic light emitting diodeadapted to emit green light, and the third LED stack 543 may be aninorganic light emitting diode adapted to emit blue light. The first LEDstack 523 may include an AlGaInP-based well layer, the second LED stack533 may include an AlGaInP or AlGaInN-based well layer, and the thirdLED stack 543 may include an AlGaInN-based well layer. However, theinventive concepts are not limited thereto. When the light emittingdevice 500 includes a micro LED, which has a surface area less thanabout 10,000 square μm as known in the art, or less than about 4,000square μm or 2,500 square μm in other exemplary embodiments, the firstLED stack 523 may emit any one of red, green, and blue light, and thesecond and third LED stacks 533 and 543 may emit a different one of red,green, and blue light, without adversely affecting operation, due to thesmall form factor of a micro LED.

The first conductivity type semiconductor layer 523 a, 533 a, and 543 aof each of the LED stacks 523, 533, and 543 may be an n-typesemiconductor layer, and the second conductivity type semiconductorlayer 523 b, 533 b, and 543 b thereof may be a p-type semiconductorlayer. In the illustrated exemplary embodiment, an upper surface of thefirst LED stack 523 is an n-type semiconductor layer 523 a, an uppersurface of the second LED stack 533 is an n-type semiconductor layer 533a, and an upper surface of the third LED stack 543 is a p-typesemiconductor layer 543 b. More particularly, only the semiconductorlayers of the third LED stack 543 are stacked in a different sequencefrom those of the first and second LED stacks 523 and 533. The firstconductivity type semiconductor layer 543 a of the third LED stack 543may be subjected to surface texturing in order to improve lightextraction efficiency. In some exemplary embodiments, the firstconductivity type semiconductor layer 533 a of the second LED stack 533may also be subjected to surface texturing.

The first LED stack 523, the second LED stack 533, and the third LEDstack 543 may be stacked to overlap one another, and may havesubstantially the same luminous area. Further, in each of the LED stacks523, 533, and 543, the first conductivity type semiconductor layer 523a, 533 a, and 543 a may have substantially the same area as the secondconductivity type semiconductor layer 523 b, 533 b, and 543 b. Inparticular, in each of the first LED stack 523 and the second LED stack533, the first conductivity type semiconductor layer 523 a or 533 a maycompletely overlap the second conductivity type semiconductor layer 523b and 533 b. In the third LED stack 543, a hole h5 is formed on thesecond conductivity type semiconductor layer 543 b to expose the firstconductivity type semiconductor layer 543 a, and thus, the firstconductivity type semiconductor layer 543 a has a slightly larger areathan the second conductivity type semiconductor layer 543 b.

The first LED stack 523 is disposed apart from the second substrate 541,the second LED stack 533 is disposed under the first LED stack 523, andthe third LED stack 543 is disposed under the second LED stack 533.Since the first LED stack 523 may emit light having a longer wavelengththan the second and third LED stacks 533 and 543, light generated fromthe first LED stack 523 may be emitted outside after passing through thesecond and third LED stacks 533 and 543 and the second substrate 541. Inaddition, since the second LED stack 533 may emit light having a longerwavelength than the third LED stack 543, light generated from the secondLED stack 533 may be emitted outside after passing through the third LEDstack 543 and the second substrate 541.

The distributed Bragg reflector 522 may be disposed between the firstsubstrate 521 and the first LED stack 523. The distributed Braggreflector 522 reflects light generated from the first LED stack 523 toprevent light from being lost through absorption by the substrate 521.For example, the distributed Bragg reflector 522 may be formed byalternately stacking AlAs and AlGaAs-based semiconductor layers oneabove another.

The first ohmic electrode 525 is disposed between the first LED stack523 and the second LED stack 533. The first ohmic electrode 525 is inohmic contact with the second conductivity type semiconductor layer 523b of the first LED stack 523, and transmits light generated from thefirst LED stack 523. The first ohmic electrode 525 may be formed as amesh electrode. For example, the first ohmic electrode 525 may includethe mesh electrode formed of an Au—Zn or Au—Be metal layer. As shown inFIG. 71B, the first ohmic electrode 525 may include a pad region 525 a,and the through-hole via 563 b may be connected to the pad region 525 a.

As used herein, the term “mesh electrode” may refer to a conductor or aconductive structure having a mesh shape, which may be formed on linesconnected to one another and openings surrounded by the lines. In someexemplary embodiments, the lines connected to one another may bestraight lines or curved lines, without being limited thereto. Inaddition, the lines may have the same or different thicknesses from eachother, and the openings surrounded by the lines may have the same ordifferent areas from each other. The mesh electrode may generally form aregular pattern in a plan view, but in some exemplary embodiments, thepattern formed by the mesh electrode may be irregular. The first ohmicelectrode 525 may have openings, to which the through-hole vias 565 a,565 b, 567 a, and 567 b pass through without contacting the first ohmicelectrode 525.

The second ohmic electrode 535 is in ohmic contact with the secondconductivity type semiconductor layer 533 b of the second LED stack 533.As shown in the drawings, the second ohmic electrode 535 contacts alower surface of the second LED stack 533 between the second LED stack533 and the third LED stack 543. The second ohmic electrode 535 may beformed as the mesh electrode. For example, the second ohmic electrode535 may include the mesh electrode including Pt or Rh, and may have amultilayer structure of Ni/Ag/Pt, for example. The second ohmicelectrode 535 may include a pad region (see 535 a of FIG. 72A) toconnect the through-hole via 565 b.

The third ohmic electrode 545 is in ohmic contact with the secondconductivity type semiconductor layer 543 b of the third LED stack 543.The third ohmic electrode 545 may be disposed between the second LEDstack 533 and the third LED stack 543, and contacts the upper surface ofthe third LED stack 543. In an exemplary embodiment, the third ohmicelectrode 545 may be formed of a metal layer or a conductive oxidelayer, such as ZnO, which is transparent to red light and green light.The third ohmic electrode 545 may also be transparent to blue light. Inanother exemplary embodiment, the third ohmic electrode 545 may beformed as a mesh electrode. For example, the third ohmic electrode 545may include the mesh electrode including Pt or Rh, and may have, forexample, a multilayer structure of Ni/Ag/Pt. The third ohmic electrode545 may include a pad region (see 545 a of FIG. 73A) to connect thethrough-hole via 567 b.

Each of the first ohmic electrode 525, the second ohmic electrode 535,and the third ohmic electrode 545 is in ohmic contact with the p-typesemiconductor layer of each of the LED stacks to assist in currentspreading. In addition, the mesh electrode includes the openings totransmit light generated from the first to third LED stacks 523, 533,and 543.

The first color filter 547 may be disposed between the third ohmicelectrode 545 and the second LED stack 533, and the second color filter557 may be disposed between the second LED stack 533 and the first LEDstack 523. The first color filter 547 transmits light generated from thefirst and second LED stacks 523 and 533, while reflecting lightgenerated from the third LED stack 543. The second color filter 557transmits light generated from the first LED stack 523 while reflectinglight generated from the second LED stack 533. Accordingly, lightgenerated from the first LED stack 523 may be emitted outside throughthe second LED stack 533 and the third LED stack 543, and lightgenerated from the second LED stack 533 may be emitted outside throughthe third LED stack 543. Furthermore, it is possible to prevent lightloss by preventing light generated from the second LED stack 533 fromentering the first LED stack 523 or light generated from the third LEDstack 543 from entering the second LED stack 533.

In some exemplary embodiments, the second color filter 557 may reflectlight generated from the third LED stack 543.

The first and second color filters 547 and 557 may be, for example, alow pass filter allowing light in a low frequency band, e.g., a longwavelength band to pass therethrough, a band pass filter allowing lightin a predetermined wavelength band, or a band stop filter that preventslight in a predetermined wavelength band from passing therethrough. Inparticular, each of the first and second color filters 547 and 557 maybe formed by alternately stacking insulation layers having differentrefractive indices one above another, such as TiO₂ and SiO₂, forexample. In particular, each of the first and second color filters 547and 557 may include a distributed Bragg reflector (DBR). In addition, astop band of the distributed Bragg reflector can be controlled byadjusting the thicknesses of TiO₂ and SiO₂ layers. The low pass filterand the band pass filter may also be formed by alternately stackinginsulation layers having different refractive indices one above another.

The first bonding layer 549 couples the second LED stack 533 to thethird LED stack 543. The first bonding layer 549 may couple the firstcolor filter 547 to the second ohmic electrode 535 between the firstcolor filter 547 and the second ohmic electrode 535. For example, thefirst bonding layer 549 may be formed of a transparent organic materialor a transparent inorganic material. Examples of the organic materialmay include SUB, poly(methyl methacrylate) (PMMA), polyimide, Parylene,benzocyclobutene (BCB), or others, and examples of the inorganicmaterial may include Al₂O₃, SiO₂, SiN_(x), or others. More particularly,the first bonding layer 549 may be formed of spin-on-glass (SOG).

The second bonding layer 559 couples the second LED stack 533 to thefirst LED stack 523. As shown in the drawings, the second bonding layer559 may be disposed between the second color filter 557 and the firstohmic electrode 525. The second bonding layer 559 may be formed ofsubstantially the same material as the first bonding layer 549.

The holes h1, h2, h3, h4, and h5 are formed through the first substrate521. The hole h1 may be formed through the first substrate 521, thedistributed Bragg reflector 522, and the first LED stack 523 to exposethe first ohmic electrode 525. For example, the hole h1 may expose thepad region 525 a. The hole h2 may be formed through the first substrate521, the distributed Bragg reflector 522, the first ohmic electrode 525,the second bonding layer 559, and the second color filter 557 to exposethe first conductivity type semiconductor layer 533 a of the second LEDstack 533.

The hole h3 may be formed through the first substrate 521, thedistributed Bragg reflector 522, the first ohmic electrode 525, thesecond bonding layer 559, the second color filter 557, and the secondLED stack 533 to expose the second ohmic electrode 535. For example, thehole h3 may expose the pad region 535 a. The hole h4 may be formedthrough the first substrate 521, the distributed Bragg reflector 522,the first ohmic electrode 525, the second bonding layer 559, the secondcolor filter 557, the second LED stack 533, the second ohmic electrode535, the first bonding layer 549, and the first color filter 547 toexpose the third ohmic electrode 545. For example, the hole h4 mayexpose the pad region 545 a. Furthermore, the hole h5 may be formedthrough the first substrate 521, the distributed Bragg reflector 522,the first ohmic electrode 525, the second bonding layer 559, the secondcolor filter 557, the second LED stack 533, the second ohmic electrode535, the first bonding layer 549, and the first color filter 547 toexpose the ohmic electrode 546. When the ohmic electrode 546 is omittedin some exemplar embodiments, the first conductivity type semiconductorlayer 543 a may be exposed by the hole h5.

Although the holes h1, h3, and h4 are illustrated as being separatedfrom one another to expose the first to third ohmic electrodes 525, 535,and 545, respectively, however, the inventive concepts are not limitedthereto, and the first to third ohmic electrodes 525, 535, and 545 maybe exposed though a single hole.

The lower insulation layer 561 covers side surfaces of the firstsubstrate 521 and the first to third LED stacks 523, 533, and 543, whilecovering an upper surface of the first substrate 521. The lowerinsulation layer 561 also covers side surfaces of the holes h1, h2, h3,h4, and h5. The lower insulation layer 561 may be subjected topatterning to expose a bottom of each of the holes h1, h2, h3, h4, andh5. Furthermore, the lower insulation layer 561 may also be subjected topatterning to expose the upper surface of the first substrate 521.

The ohmic electrode 563 a is in ohmic contact with the upper surface ofthe first substrate 521. The ohmic electrode 563 a may be formed in anexposed region of the first substrate 521, which is exposed bypatterning the lower insulation layer 561. The ohmic electrode 563 a maybe formed of Au—Te alloys or Au—Ge alloys, for example.

The through-hole vias 563 b, 565 a, 565 b, 567 a, and 567 b are disposedin the holes h1, h2, h3, h4, and h5. The through-hole via 563 b may bedisposed in the hole h1, and may be electrically connected to the firstohmic electrode 525. The through-hole via 565 a may be disposed in thehole h2, and be in ohmic contact with the first conductivity typesemiconductor layer 533 a. The through-hole via 565 b may be disposed inthe hole h3, and may be electrically connected to the second ohmicelectrode 535. The through-hole via 567 a may be disposed in the holeh5, and may be electrically connected to the first conductivity typesemiconductor layer 543 a. For example, the through-hole via 567 a maybe electrically connected to the ohmic electrode 546 through the holeh5. The through-hole via 567 b may be disposed in the hole h4, and maybe connected to the third ohmic electrode 545. The through-hole vias 563b, 565 b, and 567 b may be directly connected to the first to thirdohmic electrodes 525, 535, and 545, respectively, but the inventiveconcepts are not limited thereto. For example, in addition to the ohmicelectrodes 525, 535, and 545, a current spreader for current spreadingmay be formed together with the ohmic electrodes, and the through-holevias 563 b, 565 b, or 567 b may be directly connected to the currentspreader. The current spreader may be formed of a metallic materialhaving a higher electrical conductivity than the ohmic electrodes. Inparticular, when the third ohmic electrode 545 is formed of atransparent electrode, such as ZnO, the current spreader formed of ametallic material may be additionally formed to assist in currentspreading. In this case, after patterning the transparent electrode toexpose the second conductivity type semiconductor layer 543 b, thecurrent spreader may be formed on the exposed second conductivity typesemiconductor layer 543 b. The current spreader may be formed to havevarious shapes, such as substantially a linear, a curved, or a ringshape to surround a central region of the second conductivity typesemiconductor layer 543 b, for example.

The upper insulation layer 571 covers the lower insulation layer 561,and covers the ohmic electrode 563 a. The upper insulation layer 571 maycover the lower insulation layer 561 at the side surfaces of the firstsubstrate 521 and the first to third LED stacks 523, 533, and 543, andmay cover the lower insulation layer 561 over the first substrate 521.The upper insulation layer 571 may have an opening 571 a exposing theohmic electrode 563 a, and may also have openings exposing thethrough-hole vias 563 b, 565 a, 565 b, 567 a, and 567 b.

The lower insulation layer 561 or the upper insulation layer 571 may beformed of silicon oxide or silicon nitride, but it is not limitedthereto. For example, the lower insulation layer 561 or the upperinsulation layer 571 may be a distributed Bragg reflector formed bystacking insulation layers having different refractive indices. Inparticular, the upper insulation layer 571 may be a light reflectivelayer or a light blocking layer.

The electrode pads 573 a, 573 b, 573 c, and 573 d are disposed on theupper insulation layer 571, and are electrically connected to the firstto third LED stacks 523, 533, and 543. For example, the first electrodepad 573 a is electrically connected to the ohmic electrode 563 a exposedthrough the opening 571 a of the upper insulation layer 571, and thesecond electrode pad 573 b is electrically connected to the through-holevia 565 a exposed through the opening of the upper insulation layer 571.The third electrode pad 573 c is electrically connected to thethrough-hole via 567 a exposed through the opening of the upperinsulation layer 571. A common electrode pad 573 d is commonlyelectrically connected to the through-hole vias 563 b, 565 b, and 567 b.

Accordingly, the common electrode pad 573 d is commonly electricallyconnected to the second conductivity type semiconductor layers 523 b,533 b, and 543 b of the first to third LED stacks 523, 533, and 543, andeach of the electrode pads 573 a, 573 b, 573 c is electrically connectedto the first conductivity type semiconductor layers 523 a, 533 a, and543 a of the first to third LED stacks 523, 533, and 543, respectively.

According to an exemplary embodiment, the first LED stack 523 iselectrically connected to the electrode pads 573 d and 573 a, the secondLED stack 533 is electrically connected to the electrode pads 573 d and573 b, and the third LED stack 543 is electrically connected to theelectrode pads 573 d and 573 c. As such, anodes of the first LED stack523, the second LED stack 533, and the third LED stack 543 are commonlyelectrically connected to the common electrode pad 573 d, and thecathodes thereof are electrically connected to the first to thirdelectrode pads 573 a, 573 b, and 573 c, respectively. Accordingly, thefirst to third LED stacks 523, 533, and 543 may be independently driven.

FIGS. 71A, 71B, 72A, 72B, 73A, 73B, 74, 75, 76, 77A, 77B, 78A, 78B, 79A,79B, 80A, 80B, 81A, and 81B are schematic plan views and cross-sectionalviews illustrating a method of manufacturing a light emitting device fora display according to an exemplary embodiment. In the drawings, eachplan view corresponds to FIG. 70A, and each cross-sectional view istaken along line A-A of corresponding plan view. FIGS. 71B and 72B arecross-sectional views taken along line B-B of FIGS. 71A and 72A,respectively.

First, referring to FIGS. 71A and 71B, a first LED stack 523 is grown ona first substrate 521. The first substrate 521 may be a GaAs substrate,for example. The first LED stack 523 may include AlGaInP-basedsemiconductor layers, and includes a first conductivity typesemiconductor layer 523 a, an active layer, and a second conductivitytype semiconductor layer 523 b. Here, the first conductivity type may bean n-type, and the second conductivity type may be a p-type. Adistributed Bragg reflector 522 may be formed prior to the growth of thefirst LED stack 523. The distributed Bragg reflector 522 may have astack structure formed by repeatedly stacking AlAs/AlGaAs layers, forexample.

A first ohmic electrode 525 may be formed on the second conductivitytype semiconductor layer 523 b. The first ohmic electrode 525 may beformed of an ohmic metal layer, such as Au—Zn or Au—Be using E-BeamEvaporation technique, for example. The ohmic metal layer may bepatterned by photolithography and etching techniques to be formed as themesh electrode having openings as shown in FIG. 71A. Furthermore, thefirst ohmic electrode 525 may be formed to have a pad region 525 a.

Referring to FIGS. 72A and 72B, a second LED stack 533 is grown on asubstrate 531, and a second ohmic electrode 535 is formed on the secondLED stack 533. The second LED stack 533 may include AlGaInP-based orAlGaInN-based semiconductor layers, and may include a first conductivitytype semiconductor layer 533 a, an active layer, and a secondconductivity type semiconductor layer 533 b. The substrate 531 may be asubstrate capable of growing AlGaInP-based semiconductor layers thereon,for example, a GaAs substrate or a GaP substrate, or a substrate capableof growing AlGaInN-based semiconductor layers thereon, for example, asapphire substrate. The first conductivity type may be an n-type, andthe second conductivity type may be a p-type. A composition ratio of Al,Ga, and In for the second LED stack 533 may be determined so that thesecond LED stack 533 may emit green light, for example. In addition,when the GaP substrate is used, a pure GaP layer or a nitrogen (N) dopedGaP layer is formed on the GaP to generate green light. The second ohmicelectrode 535 is in ohmic contact with the second conductivity typesemiconductor layer 533 b. For example, the second ohmic electrode 535may include Pt or Rh, and may be, for example, formed of Ni/Ag/Pt. Thesecond ohmic electrode 535 may also be formed as the mesh electrode byphotolithography and etching techniques, and may include a pad region535 a.

Referring to FIG. 73A and FIG. 73B, a third LED stack 543 is grown on asecond substrate 541, and a third ohmic electrode 545 is formed on thethird LED stack 543. The third LED stack 543 may include AlGaInN-basedsemiconductor layers, and may include a first conductivity typesemiconductor layer 543 a, an active layer, and a second conductivitytype semiconductor layer 543 b. The first conductivity type may be ann-type, and the second conductivity type may be a p-type.

The second substrate 541 is a substrate capable of growing GaN-basedsemiconductor layers thereon, and may be different from the firstsubstrate 521. A composition ratio of AlGaInN for the third LED stack543 is determined to allow the third LED stack 543 to emit blue light,for example. The third ohmic electrode 545 is in ohmic contact with thesecond conductivity type semiconductor layer 543 b. The third ohmicelectrode 545 may be formed of a conductive oxide layer, such as SnO₂,ZnO, IZO, or others. Alternatively, the third ohmic electrode 545 may beformed as a mesh electrode. For example, the third ohmic electrode 545may be formed as the mesh electrode including Pt or Rh, and may have,for example, a multilayer structure of Ni/Ag/Pt. The third ohmicelectrode 545 may also be formed as the mesh electrode patterned byphotolithography and etching techniques, and may include a pad region545 a.

After openings are formed to expose the second conductivity typesemiconductor layer 543 b by patterning the third ohmic electrode 545,the first conductivity type semiconductor layer 543 a may be exposed bypartially etching the second conductivity type semiconductor layer 543b. Subsequently, an ohmic electrode 546 may be formed in an exposedregion of the first conductivity type semiconductor layer 543 a. Theohmic electrode 546 may be formed of a metal layer in ohmic contact withthe first conductivity type semiconductor layer 543 a. For example, theohmic electrode 546 may have a multilayer structure of Ni/Au/Ti orNi/Au/Ti/Ni. However, the ohmic electrode 546 is electrically separatedfrom the third ohmic electrode 545 and the second conductivity typesemiconductor layer 543 b.

In some exemplary embodiments, a current spreader may be formed alongwith the third ohmic electrode 545 to improve the current spreadingperformance. More particularly, when the third ohmic electrode 545 isformed of a conductive oxide layer, the conductive oxide layer is etchedto partially expose the second conductivity type semiconductor layer 543b, and the current spreader may be additionally formed as a metal layerhaving high electrical conductivity in an exposed region of the secondconductivity type semiconductor layer 543 b.

Then, a first color filter 547 is formed on the second ohmic electrode545. Since the first color filter 547 is substantially the same as thatdescribed with reference to FIG. 70A and FIG. 70B, detailed descriptionsthereof will be omitted.

Referring to FIG. 74 , the second LED stack 533 of FIG. 72A and FIG. 72Bis bonded on the third LED stack 543 of FIG. 73A and FIG. 73B, and thesecond substrate 531 is removed therefrom.

The first color filter 547 is bonded to the second ohmic electrode 535to face each other. For example, bonding material layers may be formedon the first color filter 547 and the second ohmic electrode 535, andare bonded to each other to form a first bonding layer 549. The bondingmaterial layers may be transparent organic material layers ortransparent inorganic material layers, for example. Examples of theorganic material may include SU8, poly(methyl methacrylate) (PMMA),polyimide, Parylene, benzocyclobutene (BCB), or others, and examples ofthe inorganic material may include Al₂O₃, SiO₂, SiN_(x), or others. Moreparticularly, the first bonding layer 549 may be formed of spin-on-glass(SOG).

Thereafter, the substrate 531 may be removed from the second LED stack533 by laser lift-off or chemical lift-off. As such, an upper surface ofthe first conductivity type semiconductor layer 533 a of the second LEDstack 533 is exposed. In an exemplary embodiment, the exposed surface ofthe first conductivity type semiconductor layer 533 a may be subjectedto texturing.

Referring to FIG. 75 , a second color filter 557 is formed on the secondLED stack 533. The second color filter 557 may be formed by alternatelystacking insulation layers having different refractive indices and issubstantially the same as that described with reference to FIG. 70A andFIG. 70B, and thus, detailed descriptions thereof will be omitted toavoid repetition.

Subsequently, referring to FIG. 76 , the first LED stack 523 of FIG. 71is bonded to the second LED stack 533. The second color filter 557 maybe bonded to the first ohmic electrode 525 to face each other. Forexample, bonding material layers may be formed on the second colorfilter 557 and the first ohmic electrode 525, and are bonded to eachother to form a second bonding layer 559. The bonding material layersare substantially the same as those described with reference to thefirst bonding layer 549, and thus, detailed descriptions thereof will beomitted.

Referring to FIG. 77A and FIG. 77B, holes h1, h2, h3, h4, and h5 areformed through the first substrate 521, and isolation trenches definingdevice regions are also formed to expose the second substrate 541.

The hole h1 may expose the pad region 525 a of the first ohmic electrode525, the hole h2 may expose the first conductivity type semiconductorlayer 533 a, the hole h3 may expose the pad region 535 a of the secondohmic electrode 535, the hole h4 may expose the pad region 545 a of thethird ohmic electrode 545, and the hole h5 may expose the ohmicelectrode 546. When the hole h5 exposes the ohmic electrode 546, anupper surface of the ohmic electrode 546 may include an anti-etchinglayer, for example, a Ni layer.

The isolation trench may expose the second substrate 541 along aperiphery of each of the first to third LED stacks 523, 533, and 543.Although FIGS. 77A and 77B show the isolation trench as being formed toexpose the second substrate 541, in some exemplary embodiments, theisolation trench may be formed to expose the first conductivity typesemiconductor layer 543 a. The hole h5 may be formed together with theisolation trench by the etching technique, however, the inventiveconcepts are not limited thereto.

The holes h1, h2, h3, h4, and h5 and the isolation trenches may beformed by photolithography and etching techniques, and are not limitedto a particular formation sequence. For example, a shallower hole may beformed prior to a deeper hole, or vice versa. The isolation trench maybe formed before or after forming the holes h1, h2, h3, h4, and h5.Alternatively, the isolation trench may be formed together with the holeh5, as described above.

Referring to FIG. 78A and FIG. 78B, a lower insulation layer 561 isformed on the first substrate 521. The lower insulation layer 561 maycover side surfaces of the first substrate 521, and side surfaces of thefirst to third LED stacks 523, 533, and 543, which are exposed throughthe isolation trench.

The lower insulation layer 561 may also cover side surfaces of the holesh1, h2, h3, h4, and h5. The lower insulation layer 561 is subjected topatterning to expose a bottom of each of the holes h1, h2, h3, h4, andh5.

The lower insulation layer 561 may be formed of silicon oxide or siliconnitride, but it is not limited thereto. The lower insulation layer 561may be a distributed Bragg reflector.

Subsequently, the through-hole vias 563 b, 565 a, 565 b, 567 a, and 567b are formed in the holes h1, h2, h3, h4, and h5. The through-hole vias563 b, 565 a, 565 b, 567 a, and 567 b may be formed by electric platingor the like. For example, a seed layer may be first formed inside theholes h1, h2, h3, h4, and h5 and the through-hole vias 563 b, 565 a, 565b, 567 a, and 567 b may be formed by plating with copper using the seedlayer. The seed layer may be formed of Ni/Al/Ti/Cu, for example. Thethrough-hole vias 563 b, 565 b, and 567 b may be connected to the padregions 525 a, 535 a, and 545 a, respectively, and the through-hole vias565 a and 567 a may be connected to the first conductivity typesemiconductor layer 533 a and the ohmic electrode 546, respectively.

Referring to FIG. 79A and FIG. 79B, the upper surface of the firstsubstrate 521 may be exposed by patterning the lower insulation layer561. The process of patterning the lower insulation layer 561 to exposethe upper surface of the first substrate 521 may be performed uponpatterning the lower insulation layer 561 to expose the bottoms of theholes h1, h2, h3, h4, and h5.

The upper surface of the first substrate 521 may be exposed in a broadarea, and may exceed, for example, half the area of the light emittingdevice.

Thereafter, an ohmic electrode 563 a is formed on the exposed uppersurface of the first substrate 521. The ohmic electrode 563 a may beformed of a conductive layer and in ohmic contact with the firstsubstrate 521. The ohmic electrode 563 a may include Au—Te alloys orAu—Ge alloys, for example.

As shown in FIG. 79A, the ohmic electrode 563 a is separated from thethrough-hole vias 563 b, 565 a, 565 b, 567 a, and 567 b.

Referring to FIG. 80A and FIG. 80B, an upper insulation layer 571 isformed to cover the lower insulation layer 561 and the ohmic electrode563 a. The upper insulation layer 571 may also cover the lowerinsulation layer 561 at the side surfaces of the first to third LEDstacks 523, 533, and 543 and the first substrate 521. However, the upperinsulation layer 571 may be subjected to patterning so as to formopenings exposing the through-hole vias 563 b, 565 a, 565 b, 567 a, and567 b together with an opening 571 a exposing the ohmic electrode 563 a.

The upper insulation layer 571 may be formed of a transparent oxidelayer such as silicon oxide or silicon nitride, but it is not limitedthereto. For example, the upper insulation layer 571 may be a lightreflective insulation layer, for example, a distributed Bragg reflector,or a light blocking layer such as a light absorption layer.

Referring to FIG. 81A and FIG. 81B, electrode pads 573 a, 573 b, 573 c,and 573 d are formed on the upper insulation layer 571. The electrodepads 573 a, 573 b, 573 c, and 573 d may include first to third electrodepads 573 a, 573 b, and 573 c, and a common electrode pad 573 d.

The first electrode pad 573 a may be connected to the ohmic electrode563 a exposed through the opening 571 a of the upper insulation layer571, the second electrode pad 573 b may be connected to the through-holevia 565 a, and the third electrode pad 573 c may be connected to thethrough-hole via 567 a. The common electrode pad 573 d may be commonlyconnected to the through-hole vias 563 b, 565 b, and 567 b.

The electrode pads 573 a, 573 b, 573 c, and 573 d are electricallyseparated from one another, and thus, each of the first to third LEDstacks 523, 533, and 543 is electrically connected to two electrode padsto be independently driven.

Thereafter, the second substrate 541 is divided into regions for eachlight emitting device, thereby completing the light emitting device 500.As shown in FIG. 81A, the electrode pads 573 a, 573 b, 573 c, and 573 dmay be disposed around four corners of each light emitting device 500.Furthermore, the electrode pads 573 a, 573 b, 573 c, and 573 d may havesubstantially a rectangular shape, but the inventive concepts are notlimited thereto.

Although the second substrate 541 is illustrated as being divided, insome exemplary embodiments, the second substrate 541 may be removed. Inthis case, an exposed surface of the first conductivity typesemiconductor layer 543 a may be subjected to texturing.

FIG. 82A and FIG. 82B are a schematic plan view and a cross-sectionalview of a light emitting device 502 for a display according to anotherexemplary embodiment.

Referring to FIG. 82A and FIG. 82B, the light emitting device 502according to the illustrated exemplary embodiment is generally similarto the light emitting device 500 described with reference to FIG. 70Aand FIG. 70B, except that the anodes of the first to third LED stacks523, 533, and 543 are independently connected to first to thirdelectrode pads 5173 a, 5173 b, and 5173 c, and the cathodes thereof areelectrically connected to a common electrode pad 5173 d.

More particularly, the first electrode pad 5173 a is electricallyconnected to the pad region 525 a of the first ohmic electrode 525through a through-hole via 5163 b, the second electrode pad 5173 b iselectrically connected to the pad region 535 a of the second ohmicelectrode 535 through a through-hole via 5165 b, and the third electrodepad 5173 c is electrically connected to the pad region 545 a of thethird ohmic electrode 545 through a through-hole via 5167 b. The commonelectrode pad 5173 d is electrically connected to an ohmic electrode5163 a exposed through the opening 571 a of the upper insulation layer571, and is also electrically connected to the first conductivity typesemiconductor layers 533 a and 543 a of the second LED stack 533 and thethird LED stack 543 through the through-hole vias 5165 a and 5167 a. Forexample, the through-hole via 5165 a may be connected to the firstconductivity type semiconductor layer 533 a, and the through-hole via5175 a may be connected to the ohmic electrode 546 in ohmic contact withthe first conductivity type semiconductor layer 543 a.

Each of the light emitting devices 500, 502 according to the exemplaryembodiments includes the first to third LED stacks 523, 533, and 543,which may emit red, green, and blue light, respectively, and thus can beused as one pixel in a display apparatus. As described in FIG. 69 , thedisplay apparatus may be realized by arranging a plurality of lightemitting devices 500 or 502 on the circuit board 501. Since each of thelight emitting devices 500, 502 includes the first to third LED stacks523, 533, and 543, it is possible to increase the area of a subpixel inone pixel. Furthermore, the first to third LED stacks 523, 533, and 543can be mounted on the circuit board 501 by mounting one light emittingdevice, thereby reducing the number of mounting processes.

As described in FIG. 69 , the light emitting devices mounted on thecircuit board 501 can be driven in a passive matrix or active matrixdriving manner.

Although certain exemplary embodiments and implementations have beendescribed herein, other embodiments and modifications will be apparentfrom this description. Accordingly, the inventive concepts are notlimited to such embodiments, but rather to the broader scope of theappended claims and various obvious modifications and equivalentarrangements as would be apparent to a person of ordinary skill in theart.

What is claimed is:
 1. A light emitting device for a display,comprising: a first LED sub-unit; a second LED sub-unit disposed on thefirst LED sub-unit; a third LED sub-unit disposed on the second LEDsub-unit; electrode pads disposed below the first LED sub-unit; and aplanarization layer disposed between the first LED sub-unit and thesecond LED sub-unit, the planarizaiton layer being light transmissive,wherein: the electrode pads comprise: a common electrode padelectrically connected in common to the first, second, and third LEDsub-units; and first, second, and third electrode pads connected to thefirst, second, and third LED sub-units, respectively; the first, second,and third LED sub-units are independently drivable; light generated inthe first LED sub-unit is configured to be emitted to the outside of thelight emitting device through the second and third LED sub-units; andlight generated in the second LED sub-unit is configured to be emittedto the outside through the third LED sub-unit.
 2. The light emittingdevice of claim 1, wherein the first, second, and third LED sub-unitscomprise first, second, and third LED stacks configured to emit lighthaving different peak wavelengths from each other.
 3. The light emittingdevice of claim 1, further comprising: a first ohmic electrode in ohmiccontact with a first conductive type semiconductor layer of the firstLED sub-unit; and a first electrode disposed between the electrode padsand the first LED sub-unit to be in ohmic contact with the first LEDsub-unit, wherein: the first electrode pad is electrically connected tothe first ohmic electrode; and the common electrode pad is electricallyconnected to the first electrode below the first electrode.
 4. The lightemitting device of claim 3, wherein the first electrode comprises: anohmic contact layer in ohmic contact with a second conductive typesemiconductor layer of the first LED sub-unit; and a reflective layercovering at least a portion of the ohmic contact layer.
 5. The lightemitting device of claim 4, wherein the first electrode is in ohmiccontact with an upper surface of the first LED sub-unit in a pluralityof regions.
 6. The light emitting device of claim 4, further comprising:a second electrode interposed between the first and second LED sub-unitsto be in ohmic contact with a lower surface of the second LED sub-unit;a third electrode interposed between the second and third LED sub-unitsto be in ohmic contact with a lower surface of the third LED sub-unit;and a common connector electrically connecting the second electrode andthe third electrode to the first electrode, wherein the common connectoris disposed on the first electrode and is electrically connected to thecommon electrode pad through the first electrode.
 7. The light emittingdevice of claim 6, further comprising: a second current spreading layerconnected to a lower surface of the second electrode; and a thirdcurrent spreading layer connected to a lower surface of the thirdelectrode, wherein the common connector is connected to at least one ofthe second electrode and the second current spreading layer, and atleast one of the third electrode and the third current spreading layer.8. The light emitting device of claim 7, wherein the second currentspreading layer and the third current spreading layer each has a padregion for connecting the common connector and a projection extendingfrom the pad region.
 9. The light emitting device of claim 8, whereinthe common connector is connected to an upper surface of the secondcurrent spreading layer and an upper surface of the third spreadinglayer.
 10. The light emitting device of claim 6, wherein the commonconnector comprises a first common connector for electrically connectingthe second electrode and the first electrode to each other, and a secondcommon connector for electrically connecting the third electrode and thefirst common connector to each other.
 11. The light emitting device ofclaim 7, further comprising: a first color filter disposed between thefirst LED sub-unit and the second electrode; and a second color filterdisposed between the second LED sub-unit and the third electrode,wherein: the second current spreading layer is disposed between thefirst color filter and the first LED sub-unit to be connected to thesecond electrode through the first color filter; and the third currentspreading layer is disposed between the second color filter and thesecond LED sub-unit to be connected to the third electrode through thesecond color filter.
 12. The light emitting device of claim 7, furthercomprising: a second connector for electrically connecting the secondLED sub-unit and the second electrode pad to each other; and a thirdconnector for electrically connecting the third LED sub-unit and thethird electrode pad to each other, wherein: each of the second and thirdLED sub-units comprises a first conductive type semiconductor layer anda second conductive type semiconductor layer disposed below the firstconductive type semiconductor layer; the second connector iselectrically connected to the first conductive type semiconductor layerof the second LED sub-unit; and the third connector is electricallyconnected to the first conductive type semiconductor layer of the thirdLED sub-unit.
 13. The light emitting device of claim 12, wherein atleast one of the second connector and the third connector contacts thefirst conductive type semiconductor layer.
 14. The light emitting deviceof claim 12, further comprising: a second ohmic electrode in ohmiccontact with the first conductive type semiconductor layer of the secondLED sub-unit; and a third ohmic electrode in ohmic contact with thefirst conductive type semiconductor layer of the third LED sub-unit,wherein the second connector is connected to the second ohmic electrode,and the third connector is connected to the third ohmic electrode. 15.The light emitting device of claim 14, wherein the second and thirdconnectors are connected to upper surfaces of the second ohmic electrodeand the third ohmic electrode, respectively.
 16. The light emittingdevice of claim 12, wherein the third connector comprises: a lowerconnector penetrating through the second LED sub-unit; and an upperconnector penetrating through the third LED sub-unit and connected to anintermediate connector, wherein the lower connector has a pad region forconnection of the upper connector.
 17. The light emitting device ofclaim 1, further comprising an insulating layer covering side surfacesof the first, second, and third LED sub-units, wherein the insulatinglayer comprises a distributed Bragg reflector.
 18. The light emittingdevice of claim 1, further comprising: connection pads disposed belowthe first LED sub-unit; and connectors disposed on the connection padsand electrically connecting the second and third LED sub-units to theconnection pads, respectively, wherein the second electrode pad and thethird electrode pad are connected to the connection pads, respectively,below the connection pads.
 19. The light emitting device of claim 1,further comprising connectors for electrically connecting the second andthird LED sub-units to the electrode pads, wherein the connectorscomprise materials different from the electrode pads.
 20. The lightemitting device of claim 1, further comprising a filler disposed betweenthe electrode pads.